浏览全部资源
扫码关注微信
1. 大连理工大学 物理与光电工程学院,辽宁 大连,116024
2. 长春理工大学 理学院,吉林 长春,130022
纸质出版日期:2016-2-10,
收稿日期:2015-11-24,
修回日期:2015-12-7,
扫 描 看 全 文
张炳烨, 谢洪丽, 方铉等. 原子层沉积AlO<em><sub>x</sub></em>薄膜对单晶硅太阳能电池钝化机制的影响[J]. 发光学报, 2016,37(2): 192-196
ZHANG Bing-ye, XIE Hong-li, FANG Xuan etc. Passivation Mechanism of AlO<em><sub>x</sub></em> Thin Film Fabricated on c-Si by Atomic Layer Deposition[J]. Chinese Journal of Luminescence, 2016,37(2): 192-196
张炳烨, 谢洪丽, 方铉等. 原子层沉积AlO<em><sub>x</sub></em>薄膜对单晶硅太阳能电池钝化机制的影响[J]. 发光学报, 2016,37(2): 192-196 DOI: 10.3788/fgxb20163702.0192.
ZHANG Bing-ye, XIE Hong-li, FANG Xuan etc. Passivation Mechanism of AlO<em><sub>x</sub></em> Thin Film Fabricated on c-Si by Atomic Layer Deposition[J]. Chinese Journal of Luminescence, 2016,37(2): 192-196 DOI: 10.3788/fgxb20163702.0192.
采用原子层沉积设备在p型单晶制绒硅上制备了不同厚度的AlO
x
薄膜。通过研究AlO
x
薄膜厚度对样品的反射率、少数载流子寿命以及电容-电压特性的影响
发现沉积32 nm的AlO
x
薄膜样品具有最好的钝化效果。另外
通过计算Si/AlO
x
界面处的固定电荷密度和缺陷态密度
发现32 nm 厚的AlO
x
薄膜样品具有最低的缺陷态密度。系统研究了单晶硅材料的表面钝化机制
给出了影响样品载流子寿命的根本来源。
AlO
x
thin films with various thicknesses were fabricated on p-type textured crystalline silicon wafers through atomic layer deposition. The optical and electrical properties of AlO
x
thin films were significantly improved by adjusting their thicknesses. The reflectance of AlO
x
thin films decreased from 10.12% to 0.96% with increasing thickness in a wide spectral range from 350 to 1 000 nm. The passivation effect of AlO
x
was discussed by using quasi steady state photo conductance (QSSPC) and capacitance-voltage (
C-V
) measurement. The AlO
x
thin film with the thickness of 32 nm shows the highest
eff
and lowest interfacial state density (
D
it
). The origin of the polarity changing of the equivalent oxide charge (
Q
f
) for the annealed AlO
x
thin film was also investigated.
氧化铝原子层沉积钝化准稳态光电导
AlOxatomic layer deposition(ALD)passivationquasi steady state photo conductance(QSSPC)
POODT P, LANKHORST A, ROOZEBOOM F, et al.. High speed spatial atomic layer deposition of aluminum oxide layers for solar cell passivation [J]. Adv. Mater., 2010, 22:3564-3567.
QUEISSER H J, HALLER E E. Defects in semiconductors: some fatal, some vital [J]. Science, 1998, 281:945-950.
HOEX B, SCHMIDT J, POHL P. Silicon surface passivation by atomic layer deposited Al2O3 [J]. J. Appl. Phys., 2008, 104:044903.
KERR M J, CUEVAS A. Very low bulk and surface recombination in oxidized silicon wafers [J]. Sci. Technol., 2002, 17:35-38.
OLIBET S, VALLAT-SAUVAIN E, BALLIF C. Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds [J]. Phys. Rev. B, 2007, 76:035326.
LAUINGER T, SCHMIDT J, ABERLE A G, et al.. Record low surface recombination velocities on 1 omega cm p-silicon using remote plasma silicon nitride passivation [J]. Appl. Phys. Lett., 1996, 68:1232.
WERNER F, VEITH B, ZIELKE D, et al.. Electronic and chemical properties of the c-Si/Al2O3 interface [J]. J. Appl. Phys., 2011, 109:113701.
SCHMIDT J, MERKLE A, BRENDEL R, et al.. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3 [J]. Prog. Photovolt: Res. Appl., 2008, 16:461.
BENICK J, HOE X B, VAN DE SANDEN M C M, et al.. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters [J]. Appl. Phys. Lett., 2008, 92:253504.
LI T T A, CUEVAS A. Role of hydrogen in the surface passivation of crystalline silicon by sputtered aluminum oxide [J]. Prog. Photovolt: Res. Appl., 2011, 19:320-325.
KELLY P J, ARNELL R D. Magnetron sputtering: a review of recent developments and applications [J].Vacuum, 2000, 56:159-172.
DINGEMANS G, KESSELS W M M. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells [J]. J. Vac. Sci. Technol. A, 2012, 30:040802.
AGOSTINELLI G, DELABIE A, VITANOV P, et al..Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge [J]. Sol. Energy Mater. Sol. Cells, 2006, 90:3438-3443.
GRONER M D, GEORGE S M, Mclean R S, et al.. Gas diffusion barriers on polymers using Al2O3 atomic layer deposition [J]. Appl. Phys. Lett., 2006, 88:051907.
MENNA P, Di FRANCIA G, LA FERRARA V. Porous silicon in solar cells: a review and a description of its application as an AR coating [J]. Sol. Energy Mater. Sol. Cells, 1995, 37:13-24.
HOEX B, HEIL S B S, LANGEREIS E, et al.. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 [J]. Appl. Phys. Lett., 2006, 89:042112.
CHO M J, PARK H B, PARK J, et al.. Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates [J]. J. Appl. Phys., 2003, 94:2563.
SHIN B, WEBER J R, LONG R D, et al.. Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates [J]. Appl. Phys. Lett., 2010, 96:152908.
JOHNSON R S, LICOVSKI G, BAUMVOL I. Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition [J]. J. Vac. Sci. Technol. A, 2001,19:1353.
BANSAL A, SRIVASTAVA P, SINGH B R. On the surface passivation of c-silicon by RF sputtered Al2O3 for solar cell application [J]. J. Mater. Sci.: Mater. Electron., 2015, 26:639-645.
KONOFAOS N. Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics [J]. Microelectron., 2004, 35:421-425.
LIU Y H, ZHU L Q, GUO L Q, et al.. Surface passivation performance of atomic-layer-deposited Al2O3 on p-type silicon substrates [J]. J. Mater. Sci. Technol., 2014, 30:835-838.
0
浏览量
42
下载量
1
CSCD
关联资源
相关文章
相关作者
相关机构