溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管

高娅娜; 许云龙; 张建华; 李喜峰

doi:10.3788/fgxb20163701.0050

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溶胶凝胶法制备以Al₂O₃为界面修饰层的铪铟锌氧薄膜晶体管

器件制备及器件物理 | 更新时间：2020-08-12

- 溶胶凝胶法制备以Al₂O₃为界面修饰层的铪铟锌氧薄膜晶体管
- Solution Processed HfInZnO Thin Film Transistors with HfSiO_x Dielectrics Modified by Al₂O₃ Films
- 发光学报 2016年37卷第1期页码：50-55
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200444
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划(863)(2015AA033406)();广东省省级科技计划(2015B090915001)();上海科学技术委员会项目(13520500200
- DOI：10.3788/fgxb20163701.0050
  中图分类号： TN321.5
- 纸质出版日期：2016-1-10，
  
  收稿日期：2015-9-2，
  
  修回日期：2015-11-25，
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高娅娜, 许云龙, 张建华等. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016,37(1): 50-55

GAO Ya-na, XU Yun-long, ZHANG Jian-hua etc. Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films[J]. Chinese Journal of Luminescence, 2016,37(1): 50-55
高娅娜, 许云龙, 张建华等. 溶胶凝胶法制备以Al2O3为界面修饰层的铪铟锌氧薄膜晶体管[J]. 发光学报, 2016,37(1): 50-55 DOI： 10.3788/fgxb20163701.0050.

GAO Ya-na, XU Yun-long, ZHANG Jian-hua etc. Solution Processed HfInZnO Thin Film Transistors with HfSiOx Dielectrics Modified by Al2O3 Films[J]. Chinese Journal of Luminescence, 2016,37(1): 50-55 DOI： 10.3788/fgxb20163701.0050.

摘要

利用溶液法制备了以HfSiO

为绝缘层、HfInZnO为有源层、Al

为界面修饰层的TFT器件。HfSiO

薄膜经Al

薄膜修饰后

薄膜表面粗糙度从0.24 nm降低至0.16 nm。Al

薄膜与HfSiO

薄膜之间的界面接触良好

以Al

为界面修饰层的TFT器件整体性能得到提升

具体表现为:栅极电压正向和反向扫描过程中产生的阈值电压漂移显著减小

器件的阈值电压和亚阈值摆幅降低

迁移率与开关比增大。研究证明

溶液法制备Al

薄膜适合作为改善器件性能的界面修饰层。

Abstract

Solution processed HfInZnO (HIZO) thin film transistors (TFTs) with HfSiO

dielectrics modified by Al

layer were fabricated. After the Al

layer was inserted

the optical transmittance of HfSiO

films was hardly changed and the surface root mean square (RMS) roughness was decreased from 0.24 to 0.16 nm. The excellent surface was benefited to improve the interface properties between dielectrics and semiconductors of HIZO TFTs. Furthermore

the characteristics of thin film transistors were improved. The threshold voltage shift between forward and reverse sweep was decreased obviously. Simultaneously

the threshold voltage and subthreshold voltage were decreased

and the on to off current ratios and mobility were increased. Above all

the experiment results indicate that Al

film is fit for using in TFTs as the interface modification layer to improve TFTs performance.

关键词

溶液法薄膜晶体管界面修饰层Al2O3

Keywords

solution processthin film transistorsmodification layer Al2O3

references

NOMURA K, OHTA H, TAKAGI A, et al.. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(7016):488-492.

高娅娜,李喜峰,张建华. 溶胶凝胶法制备高性能锆铝氧化物作为绝缘层的薄膜晶体管 [J]. 物理学报, 2014, 63 (11):118502-1-6. GAO Y N, LI X F, ZHANG J H. Solution-processed high performance HIZO thin film transistor with AZO gate dielectric [J]. Acta Phys. Sinica, 2014, 63(11):118502-1-6. (in Chinese)

LI X F, LI Q, XIN E L, et al.. Sol-gel processed indium zinc oxide thin film and transparent thin-film transistors [J]. J. Sol-Gel Sci. Technol., 2013, 65 (2):130-134.

KIM Y J, OH S, YANG B S, et al.. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors [J]. ACS Appl. Mater. Interf., 2014, 6(16):14026-14036.

LI X F, XIN E L, ZHANG J H. Effects of hf incorporation on indium zinc oxide thin-film transistors using solution process [J]. Electron. Mater. Lett., 2015, 11(1):143-148.

ROBERTSON J. High dielectric constant oxides [J]. Eur. Phys. J. Appl. Phys., 2004, 28(3):265-291.

FORTUNATO E, BARQUINHA P, MARTINS R. Oxide semiconductor thin-film transistors: a review of recent advances [J]. Adv. Mater., 2012, 24(22):2945-2986.

JANG K S, WEE D, KIMY H, et al.. Surface modification of a polyimide gate insulator with an yttrium oxide interlayer for aqueous-solution-processed ZnO thin-film transistors [J]. Langmuir, 2013, 29(23):7143-7150.

DING X, ZHANG J, ZHANG H, et al.. ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor [J]. Microelectron. Reliab., 2014, 54(11):2401-2405.

郭永林,梁续旭,胡守成,等. Al2O3薄层修饰SiNx绝缘层的IGZO-TFTs器件的性能研究 [J]. 发光学报, 2015, 36(8):947-952. GUO Y L, LIANG X X, HU S C, et al.. Improvement of IGZO-TFTs performance with SiNx gate insulator modified by Al2O3 film [J]. Chin. J. Lumin., 2015, 36(8):947-952. (in Chinese)

GAO Y N, LI X F, CHEN L L, et al.. High mobility solution-processed hafnium indium zinc oxide TFT with an Al-doped ZrO2 gate dielectric [J]. IEEE Electron. Dev. Lett., 2014, 35(5):554-556.

ZHANG L, LI J, ZHANG X W, et al.. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature [J]. Appl. Phys. Lett., 2009, 95(7):072112-1-3.

YANG W, SONG K, JEONG Y, et al.. Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors [J]. J. Mater. Chem. C, 2013, 1(27):4275-4282.

PARK J H, YOO Y B, LEE KH, et al.. Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric [J]. ACS Appl. Mater. Interf., 2013, 5(2):410-417.

李喜峰,信恩龙,石继峰,等. 低温透明非晶IGZO薄膜晶体管的光照稳定性 [J]. 物理学报, 2013, 62(10):108503-1-5. LI X F, XIN E L, SHI J F, et al.. Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination [J]. Acta Phys. Sinica, 2013, 62(10):108503-1-5. (in Chinese)

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