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磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响
Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs
- 发光学报 2015年36卷第12期 页码：1452-1457
- 作者机构：
湘能华磊光电股份有限公司,湖南 郴州,423000
- 作者简介：
- 基金信息：
DOI：10.3788/fgxb20153612.1452
中图分类号： TN303;TN304纸质出版日期：2015-12-10，
收稿日期：2015-8-21，
修回日期：2015-10-21，
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农明涛, 苗振林, 梁智勇等. 磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响[J]. 发光学报, 2015,36(12): 1452-1457
NONG Ming-tao, MIAO Zhen-lin, LIANG Zhi-yong etc. Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs[J]. Chinese Journal of Luminescence, 2015,36(12): 1452-1457
农明涛, 苗振林, 梁智勇等. 磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响[J]. 发光学报, 2015,36(12): 1452-1457 DOI： 10.3788/fgxb20153612.1452.
NONG Ming-tao, MIAO Zhen-lin, LIANG Zhi-yong etc. Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN-based LEDs[J]. Chinese Journal of Luminescence, 2015,36(12): 1452-1457 DOI： 10.3788/fgxb20153612.1452.
摘要
以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层
采用金属有机化学气相沉积法(MOCVD)外延生长了GaN基LED。与MOCVD生长的低温GaN缓冲层相比
RMS制备的AlN缓冲层具有表面更平整、颗粒更小的形核岛
有利于促进GaN外延的横向生长
减少了形核岛合并时的界面数量和高度差异
降低了缺陷和位错产生的几率。研究结果表明
溅射AlN缓冲层取代传统低温GaN缓冲层后
外延生长的GaN材料具有更高的晶体质量
LED器件在亮度、漏电和抗静电能力等光电特性上均有明显提升。
Abstract
AlN films were prepared on patterned sapphire substrates (PSS) by direct-current reactive magnetron sputtering (RMS) and used as buffer layers. The crystal quality and optical properties of GaN films grown by metal-organic chemical vapor deposition (MOCVD) with AlN buffer layers were investigated. Compared with conventional low temperature GaN buffer layers
the RMS AlN buffer layers have smoother and smaller nucleation islands
which benefits the lateral growth and the coalesce of three-dimensional GaN islands. It is found that GaN-based LEDs with RMS AlN buffer layers have higher light output power
lower electric leakage and stronger electrostatic discharge(ESD) characteristic owning to the lower threading dislocation density (TDD).
关键词
直流磁控反应溅射氮化铝缓冲层氮化镓基发光二极管金属有机化学气相沉积
Keywords
direct-current reactive magnetron sputteringAlN buffer layerGaN-based LEDsmetal-organic chemical vapor deposition
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