2&mu;m GaSb基低垂直发散角布拉格反射波导激光器优化设计

戎佳敏; 邢恩博; 赵帅; 汪丽杰; 王立军; 佟存柱

doi:10.3788/fgxb20153612.1434

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2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计

器件制备及器件物理 | 更新时间：2020-08-12

- 2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计
- Modeling of 2 μm GaSb Based Bragg Reflection Waveguide Lasers with Ultra-low Vertical Divergence
- 发光学报 2015年36卷第12期页码：1434-1439
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所,吉林长春,中国,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176046,61404138)();吉林省科技发展计划(20150520105JH)资助项目()
- DOI：10.3788/fgxb20153612.1434
  中图分类号： TN248.4
- 纸质出版日期：2015-12-10，
  
  收稿日期：2015-9-16，
  
  修回日期：2015-11-3，
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戎佳敏, 邢恩博, 赵帅等. 2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计[J]. 发光学报, 2015,36(12): 1434-1439

RONG Jia-min, XING En-bo, ZHAO Shuai etc. Modeling of 2 μm GaSb Based Bragg Reflection Waveguide Lasers with Ultra-low Vertical Divergence[J]. Chinese Journal of Luminescence, 2015,36(12): 1434-1439
戎佳敏, 邢恩博, 赵帅等. 2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计[J]. 发光学报, 2015,36(12): 1434-1439 DOI： 10.3788/fgxb20153612.1434.

RONG Jia-min, XING En-bo, ZHAO Shuai etc. Modeling of 2 μm GaSb Based Bragg Reflection Waveguide Lasers with Ultra-low Vertical Divergence[J]. Chinese Journal of Luminescence, 2015,36(12): 1434-1439 DOI： 10.3788/fgxb20153612.1434.

摘要

为实现2 m低发散角激光

提出在GaSb基半导体激光器中引入布拉格反射波导

利用光子带隙效应替代传统的全反射进行光场限制。研究了分布反馈反射镜(DBR)的厚度、对数、高低折射率DBR厚度比以及中心腔厚度等参数对激光器垂直远场发散角和光限制因子的影响。结果表明:垂直远场发散角随单对DBR厚度的增加而减小;光限制因子与远场发散角都随拉格反射镜对数的增加而减小

随高低折射率DBR厚度比的减小而增大;随着中心层厚度的增大

光限制因子减小而远场发散角增大。最终在理论上优化设计出了一种双边布拉格反射波导结构的超低垂直发散角2 m GaSb基边发射半导体激光器

其垂直远场发散角可降低到10以下。

Abstract

The GaSb based Bragg reflection waveguide (BRW) lasers emitting at 2 m with ultralow divergence were modeled. The dependence of far-field (FF) on the thickness of Bragg reflector and centre layer

the composition of Bragg reflector were simulated. The corresponding optical confinement factors were calculated. It was found that the increasing of the thickness of Bragg reflector and the thickness of high index material would improve the FF divergence. Thick center layer means the high OCF and FF angle

especially for the low thickness ratio between high index and low index material. Finally

the 2 m GaSb based BRW lasers with an ultra-low vertical divergent FF angle less than 10 was optimized.

关键词

中红外半导体激光器GaSb布拉格反射波导低垂直发散角

Keywords

mid-infrared semiconductor lasersGaSbBragg reflection waveguidelow vertical divergence

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2μm GaSb基低垂直发散角布拉格反射波导激光器优化设计

Modeling of 2 μm GaSb Based Bragg Reflection Waveguide Lasers with Ultra-low Vertical Divergence

DOI：10.3788/fgxb20153612.1434

摘要

Abstract

关键词

Keywords

references