GaN HEMT器件结构的研究进展

于宁; 王红航; 刘飞飞; 杜志娟; 王岳华; 宋会会; 朱彦旭; 孙捷

doi:10.3788/fgxb20153610.1178

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GaN HEMT器件结构的研究进展

器件制备及器件物理 | 更新时间：2020-08-12

- GaN HEMT器件结构的研究进展
- Research Progress of GaN HEMT Device Structure
- 发光学报 2015年36卷第10期页码：1178-1187
- 作者机构：
  
  1. 北京工业大学电子信息与控制工程学院光电子技术实验室北京,100124
  2. 电子科技大学中山学院电子薄膜与集成器件国家重点实验室中山分实验室,广东中山,528402
- 作者简介：
- 基金信息：
  
  北京市15青年拔尖项目(311000543115501)();中山市科技计划(2014A2FC305)();国家自然科学基金(61204011)();科研基地建设(PX
- DOI：10.3788/fgxb20153610.1178
  中图分类号： TN386.3
- 纸质出版日期：2015-10-10，
  
  收稿日期：2015-7-21，
  
  修回日期：2015-8-13，
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于宁, 王红航, 刘飞飞等. GaN HEMT器件结构的研究进展[J]. 发光学报, 2015,36(10): 1178-1187

YU Ning, WANG Hong-hang, LIU Fei-fei etc. Research Progress of GaN HEMT Device Structure[J]. Chinese Journal of Luminescence, 2015,36(10): 1178-1187
于宁, 王红航, 刘飞飞等. GaN HEMT器件结构的研究进展[J]. 发光学报, 2015,36(10): 1178-1187 DOI： 10.3788/fgxb20153610.1178.

YU Ning, WANG Hong-hang, LIU Fei-fei etc. Research Progress of GaN HEMT Device Structure[J]. Chinese Journal of Luminescence, 2015,36(10): 1178-1187 DOI： 10.3788/fgxb20153610.1178.

摘要

GaN高电子迁移率晶体管(HEMT)具有大的禁带宽度、高电子饱和速度、异质结界面的高二维电子气浓度、高击穿电压以及高的热导率

这一系列特性使它在高频、高功率、高温等领域得到了广泛的认可。本文首先论述了制约氮化镓高电子迁移率晶体管器件性能提高所遇到的问题及解决方法;然后

着重从优化材料结构设计和器件结构设计的角度

阐述了氮化镓高电子迁移率晶体管器件在高频高功率领域的最新研究进展;最后

讨论了器件进一步发展的方向。

Abstract

GaN high electron mobility transistor (HEMT) has been widely acknowledged for use in high-frequency

high-power

and high-temperature applications because of their features such as its wide band gap

high electron saturation velocity

high 2-DEG density at the hetero-interface

high breakdown voltage (BV)

and high thermal conductivity. The issues that limit the gallium nitride high electron mobility transistor device performance improvement and some solutions are introduced firstly. And then

the latest research progress on the high-frequency

high-power area of gallium nitride high electron mobility transistor is reviewed in detail with focus on the material structural design and the device structural design. Finally

the direction for the development of the device is discussed briefly.

关键词

高电子迁移率晶体管氮化镓高频结构设计

Keywords

high electron mobility transistorGaNhigh-frequencystructural design

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