LIU Yi-han, CAO Wei, LI Shao-juan etc. AlGaN and Graphene Based UV-IR Dual-color Detectors[J]. Chinese Journal of Luminescence, 2015,36(10): 1167-1170 DOI: 10.3788/fgxb20153610.1167.
the solar blind ultraviolet-near infrared dual-color detectors were successfully fabricated based on AlGaN with high Al component and single-layer graphene materials by vertical integration. The typical response of the dual color detectors in the ultraviolet band at 263 nm is 5.9 mA/W
and that in the near infrared band at 1.15 m is 0.67 mA/W
under the operating condition of room temperature
the modulation frequency of 209 Hz
and the operating voltage of 10 V and 5 V
respectively. Besides
the responses of the two types of detectors will increase with the increase of operating voltage.
关键词
AlGaN石墨烯紫外-红外双色探测器
Keywords
AlGaNgrapheneUV-IR dual-color detector
references
Hofstetter D, Theron R, Baumann E, et al. Monolithically integrated AlGaN/GaN/AIN-based solar-blind ultraviolet and near-infrared detectors [J]. Electron. Lett., 2008, 44(16):986-988.
Ariyawansa G, Rinzan M B M, Strassburg M, et al. GaN/AlGaN heterojunction infrared detector responding in 8-14 and 20-70 m ranges [J]. Appl. Phys. Lett., 2006, 89(14):141122-1-3 .
Shao J F, Perera A G U, Jayaweera P V V. Low-cost UV-IR dual band detector using nonporous ZnO film sensitized by PbS quantum dots [J]. Chin. Phys. Lett., 2010, 27(2):260-262 .
Zhang Y Z, Liu T, Meng B, et al. Broadband high photoresponse from pure monolayer graphene photodetector [J]. Nat. Commun., 2013, 4(1):8-11.
Lemme M C, Koppens F H L, Falk A L, et al. Gate-activated photoresponse in a graphene p-n junction [J]. Nano Lett., 2011, 11(10):4134-4137.
Gabor N M, Song J C W, Ma Q, et al. Hot carrier-assisted intrinsic photoresponse in grapheme [J]. Science, 2011, 334(6056):648-652.
Furchi M, Urich A, Pospischil A, et al. Microcavity-integrated graphene photodetector [J]. Nano Lett., 2012, 12(6): 2773-2777.
Withers F, Bointon T H, Craciun M F, et al. All-graphene photodetectors [J]. Acs Nano, 2013, 7(6):5052-5057.
Tsuchiya T, Terabe K, Aono M. In situ and non-volatile bandgap tuning of multilayer graphene oxide in an all-solid-state electric double-layer transistor [J]. Adv. Mater., 2014, 26(7):1087-1091.
Ferguson I, Tran C A, Karlicek R F, et al. GaN and AlGaN metal-semiconductor-metal photodetectors [J]. Mater. Sci. Eng. B, 1997, 50(1-3):311-314.
Huang Y, Chen D J, Lu H, et al. Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors [J]. Appl. Phys. Lett., 2010, 96(24):243503-1-4 .