浏览全部资源
扫码关注微信
1. 长春师范大学 物理学院, 吉林 长春 130032
2. 新加坡南洋理工大学 电气科学与电子工程学院 新加坡,639798
纸质出版日期:2015-10-10,
收稿日期:2015-5-24,
修回日期:2015-7-23,
扫 描 看 全 文
田苗苗, 贺小光, 祁金刚等. IPTO薄膜制备及其在有机光电器件中的应用[J]. 发光学报, 2015,36(10): 1162-1166
TIAN Miao-miao, HE Xiao-guang, QI Jin-gang etc. Preparation of Transparent Conductive Praseodymium Titanate Doped Indium Oxide Film and Its Application in Organic Opto-electronic Devices[J]. Chinese Journal of Luminescence, 2015,36(10): 1162-1166
田苗苗, 贺小光, 祁金刚等. IPTO薄膜制备及其在有机光电器件中的应用[J]. 发光学报, 2015,36(10): 1162-1166 DOI: 10.3788/fgxb20153610.1162.
TIAN Miao-miao, HE Xiao-guang, QI Jin-gang etc. Preparation of Transparent Conductive Praseodymium Titanate Doped Indium Oxide Film and Its Application in Organic Opto-electronic Devices[J]. Chinese Journal of Luminescence, 2015,36(10): 1162-1166 DOI: 10.3788/fgxb20153610.1162.
新型IPTO(PrTiO
3
掺杂In
2
O
3
)薄膜的可见光透过率及导电性可与商业化的ITO薄膜媲美。采用双源电子束设备制备了一种新型的IPTO透明导电薄膜
通过开尔文探针法测试
其功函数为5.14 eV。为验证新型IPTO透明导电阳极对有机电致发光器件性能的影响
将IPTO替代商业化ITO作为阳极制备了有机电致发光器件。基于IPTO阳极的器件的亮度最大值为85 140 cd/m
2
外量子效率最大值为3.16%
分别为以ITO为阳极的器件的3倍及1.13倍。这种性能的改善是由于IPTO具有较小的表面粗糙度及较高的功函数
可以降低阳极的注入势垒
有利于电荷向有机层注入
改善了器件内的空穴及电子的注入平衡。
A novel transparent conducting oxide
PrTiO
3
-doped indium oxide (IPTO)
is developed
via
double source reactive electron beam evaporation technology. The film exhibits a high work function of 5.14 eV and its stability is demonstrated in air for two months. The numerical values of optical and electrical properties of IPTO film and the commercial ITO are similar. Two OLEDs were fabricated by employing IPTO and ITO as anode
respectively. For device with IPTO anode
the peak luminance is 85 140 cd/m
2
and maximum external quantum efficiency is 3.16%
which are 3 times and 1.13 times of the ITO device. It has been demonstrated that the improvements in device performance are achieved for the IPTO-anode OLED.
透明导电薄膜功函数有机电致发光器件
transparent conductive oxidework functionOLED
Shin S, Shin J, Park K, et al. Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering [J]. Thin Solid Film, 1999, 341:225-229.
Shanthi E, Dutta V, Banerjee A, et al. Electrical and optical properties of undoped and antimony-doped tin oxide film [J]. J. Appl. Phy., 1980, 51:6243-6251.
Shamala K, Murthy L, Narasimha K, et al. Studies on tin oxide films prepared by electron beam evaporation and spray pyrolysis methods [J]. Bull. Mater. Sci., 2007, 27:295-301.
Lewis B, Paine D. Applications and processing of transparent conducting oxides [J]. MRS Bull., 2000, 25:22-27.
Coutts T, Young D, Li X. Characterization of transparent conducting oxides [J]. MRS Bull., 2000, 25:58-65.
Shanthi S, Subramanian C, Ramasamy P. Investigations on the optical properties of undoped, fluorine doped and antimony doped tin oxide films [J]. Cryst. Res. Technol., 1999, 34:1037-1046.
Lehmann H, Wilmer R. Preparation and properties of reactively co-sputtered transparent conducting films [J]. Thin Solid Films, 1975, 27:359-363.
You Z, Dong J. Surface properties of treated ITO anodes for organic light-emitting devices [J]. Appl. Surf. Sci., 2005, 249:271-276.
Ho J, Chen C, Hsiao R, et al. The work function improvement on indium-tin-oxide epitaxial layers by doping treatment for organic light-emitting device applications [J]. J. Phys. Chem. C, 2007, 111:8372-8376.
Parker I. Carrier tunneling and device characteristics in polymer light-emitting diodes [J]. J. Appl. Phys., 1994, 75:1656-1666.
Adamovich V, Cordero S, Djurovich P, et al. New charge-carrier blocking materials for high efficiency OLEDs [J]. Org. Electron., 2003, 4:77-87.
Koch N, Duhm S, Rabe J. Optimized hole injection with strong electron acceptors at organic-metal interfaces [J]. Phys. Rev. Lett., 2005, 95(23):237601-1-4.
Kim W, Mkinen A, Nikolov N, et al. Molecular organic light-emitting diodes using highly conducting polymers as anodes [J]. Appl. Phys. Lett., 2002, 80(26):3844-3846.
Koch N, Elschner A, Rabe J, et al. Work function independent hole-injection barriers between pentacene and conducting polymers [J]. Adv. Mater., 2005, 17:330-335.
Friend R, Gymer R, Holmes A, et al. Electroluminescence in conjugated polymers [J]. Nature, 1999, 397:121-128.
Yang Y, Huang Q, Metz A, et al. High-performance organic light-emitting diodes using ITO anodes grown on plastic by room-temperature ion-assisted deposition [J]. Adv. Mater., 2004, 16:321-324.
Jong M, Ijzendoom L, Voigt D, et al. Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodes [J]. Appl. Phys. Lett., 2000, 77:2255-2257.
Kim H, Gilmore C, Horwitz J, et al. Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices [J]. Appl. Phys. Lett., 2000, 76(2):259-261.
Minami T. Transparent conducting oxide semiconductor for transparent electrodes [J]. Semicond. Sci. Technol., 2005, 20:35-39.
Chen W, Huang C, Gao X, et al. Tuning the hole injection barrier at the organic/metal interface with self-assembled functionalized aromatic thiols [J]. J. Phys. Chem. B, 2006, 110(26):26075-1-6
Bender M, Trube J, Stollenwerk J. Deposition of transparent and conducting indium-tin-oxide films by the RF-superimposed DC sputtering technology [J]. Thin Solid Films, 1999, 354:100-105.
0
浏览量
50
下载量
2
CSCD
关联资源
相关文章
相关作者
相关机构