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1. 电子科技大学光电信息学院 薄膜与集成器件国家重点实验室,四川 成都,610054
2. 电子科技大学中山学院电子信息学院 薄膜与集成器件国家重点实验室中山分室,广东 中山,528402
纸质出版日期:2015-10-10,
收稿日期:2015-7-16,
修回日期:2015-8-27,
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刘新辉, 杨健君, 于军胜. 空穴阻挡中间层的加入对WOLEDs光谱稳定性的提高[J]. 发光学报, 2015,36(10): 1145-1149
LIU Xin-hui, YANG Jian-jun, YU Jun-sheng. Enhancement of WOLEDs Spectral Stability by Adding Hole-blocking Interlayer[J]. Chinese Journal of Luminescence, 2015,36(10): 1145-1149
刘新辉, 杨健君, 于军胜. 空穴阻挡中间层的加入对WOLEDs光谱稳定性的提高[J]. 发光学报, 2015,36(10): 1145-1149 DOI: 10.3788/fgxb20153610.1145.
LIU Xin-hui, YANG Jian-jun, YU Jun-sheng. Enhancement of WOLEDs Spectral Stability by Adding Hole-blocking Interlayer[J]. Chinese Journal of Luminescence, 2015,36(10): 1145-1149 DOI: 10.3788/fgxb20153610.1145.
制备了多层结构合成的白光有机电致发光器件(WOLEDs)
通过在发光层中加入一层空穴阻挡层TPBi来提高器件的光谱稳定性。当TPBi厚度为2.5 nm时
在电压由8 V升高到12 V的过程中
CIE色坐标的变化量为(0.031
0.006)。器件的电流效率为24.7 cd/A
外部量子效率最大为8.2%。相对于没有加入中间层的器件
8 V电压下的色坐标由(0.435
0.472)变为(0.333
0.439)。实验结果表明
在发光层中添加中间层可以改变器件发光的色坐标并提升光谱的稳定性。
The multilayer structure of phosphorescent organic white light-emitting devices(WOLEDs)were fabricated
and the spectral stability was enhanced by adding hole-blocking layer (TPBi) in the light emitting layer. When the thickness of TPBi is 2.5 nm
the change of CIE coordinate is (0.031
0.006) during the voltage changing from 8 to 12 V. In addition
the current efficiency is 24.7 cd/A
and the maximum external quantum efficiency is 8.2%. Compared with the device without hole-blocking layer
the CIE coordinate changes from (0.435
0.472) to (0.333
0.439) while the voltage is 8 V. The experiment results show that the CIE coordinate can be changed and the spectral stability can be enhanced by adding an interlayer in the light emitting layer.
WOLEDs空穴阻挡层光谱稳定性
WOLEDshole-blocking layerspectrum stability
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