Si(111)衬底切偏角对GaN基LED外延膜的影响

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Si(111)衬底切偏角对GaN基LED外延膜的影响

器件制备及器件物理 | 更新时间：2020-08-12

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- Si(111)衬底切偏角对GaN基LED外延膜的影响
- Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)
- 发光学报 2015年36卷第4期页码：466-471
- 作者机构：
  
  1. 南昌大学国家硅基LED工程技术研究中心,江西南昌,330047
  2. 南昌大学材料科学与工程学院,江西南昌,330031
- 作者简介：
- 基金信息：
  
  国家自然科学基金(11364034)();江西省科技支撑计划(20141BBE50035)资助项目()
- DOI：10.3788/fgxb20153604.0466
  中图分类号： O484.4;O482.31
- 纸质出版日期：2015-4-3，
  
  收稿日期：2015-2-5，
  
  修回日期：2015-3-1，
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武芹, 全知觉, 王立等. Si(111)衬底切偏角对GaN基LED外延膜的影响[J]. 发光学报, 2015,36(4): 466-471

WU Qin, QUAN Zhi-jue, WANG Li etc. Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)[J]. Chinese Journal of Luminescence, 2015,36(4): 466-471
武芹, 全知觉, 王立等. Si(111)衬底切偏角对GaN基LED外延膜的影响[J]. 发光学报, 2015,36(4): 466-471 DOI： 10.3788/fgxb20153604.0466.

WU Qin, QUAN Zhi-jue, WANG Li etc. Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)[J]. Chinese Journal of Luminescence, 2015,36(4): 466-471 DOI： 10.3788/fgxb20153604.0466.

摘要

利用金属有机化学气相沉积(MOCVD)方法在具有偏角(0~0.9)的Si(111)衬底上生长了GaN薄膜。采用高分辨X射线衍射(HRXRD)对Si衬底的偏角进行了精确的测量

利用HRXRD、原子力显微镜(AFM)以及光致发光(PL)对外延薄膜的晶体质量、量子阱中In组分、表面形貌及光学特性进行了研究。结果表明

Si(111)衬底偏角对量子阱中的In组分、 GaN外延膜的表面形貌、晶体质量以及光学性能具有重大影响。为了获得高质量的GaN外延薄膜

衬底偏角必须控制在小于0.5的范围内。超出该范围

GaN薄膜的晶体质量、表面形貌及光学性能都明显下降。

Abstract

GaN-based LED films were grown on Si(111) substrate with different miscut angle from 0 to 0.9 by MOCVD. The miscut angles of Si(111) substrates were precisely measured by high resolution X-ray diffraction (HRXRD). The morphologies of the samples were characterized by atomic force microscopy (AFM). The GaN crystal quality and indium content of MQWs were analyzed by HRXRD. The optical properties of the samples were investigated by photoluminescence (PL). The results reveal that the miscut of Si(111) substrate has significant influence on the crystal quality

surface morphology and optical properties of GaN film. The optimal miscut angle of Si(111) substrate is within 0.5. Beyond this range

the crystal quality

surface morphology and optical properties of GaN film will deteriorate drastically.

关键词

Si衬底偏角GaNMOCVD

Keywords

Si substratemiscutGaNMOCVD

references

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相关机构

北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室

中国科学院苏州纳米技术与纳米仿生研究所

北京凝聚态物理国家实验室, 中国科学院物理研究所清洁能源实验室, 北京 100190

天津中环新光科技有限公司

南昌大学国家硅基LED工程技术研究中心

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