浏览全部资源
扫码关注微信
1. 合肥工业大学 电子科学与应用物理学院,安徽 合肥,230009
2. 合肥工业大学 化学与化工学院,安徽 合肥,230009
纸质出版日期:2015-4-3,
收稿日期:2015-1-7,
修回日期:2015-2-13,
扫 描 看 全 文
余亮, 梁齐, 刘磊等. 膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响[J]. 发光学报, 2015,36(4): 429-436
YU Liang, LIANG Qi, LIU Lei etc. Effect of Thickness on The Structure and Optical Properties of SnS Films Fabricated by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2015,36(4): 429-436
余亮, 梁齐, 刘磊等. 膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响[J]. 发光学报, 2015,36(4): 429-436 DOI: 10.3788/fgxb20153604.0429.
YU Liang, LIANG Qi, LIU Lei etc. Effect of Thickness on The Structure and Optical Properties of SnS Films Fabricated by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2015,36(4): 429-436 DOI: 10.3788/fgxb20153604.0429.
利用射频磁控溅射法在玻璃衬底上制备SnS薄膜
用X射线衍射(XRD)、能谱仪(EDS)、原子力显微镜(AFM)、场发射扫描电镜(FE-SEM)和紫外-可见-近红外分光光度计(UV-Vis-NIR)分别对所制备的薄膜晶体结构、组分、表面形貌、厚度、反射率和透过率进行表征分析。研究结果表明:薄膜厚度的增加有利于改善薄膜的结晶质量和组分配比
晶粒尺寸和颗粒尺寸随着厚度的增加而变大。样品的折射率在1 500~2 500 nm波长范围内随着薄膜厚度的增加而增大。样品在可见光区域吸收强烈
吸收系数达10
5
cm
-1
量级。禁带宽度在薄膜厚度增加到1 042 nm时为1.57 eV
接近于太阳电池材料的的最佳光学带隙(1.5 eV)。
SnS thin films were prepared on glass substrates by RF magnetron sputtering technique. The crystalline structure
composition
surface morphology
film thickness
transmittance and reflectance of the films were characterized by XRD
EDS
AFM
FE-SEM and UV-Vis-NIR spectroscopy
respectively. The results show that the increase of thin film thickness helps to improve the crystalline quality and component ratio of the film
and the grain sizes and particle sizes increase with the increasing of the film thickness. The refractive index of the sample increases with the increasing of film thickness in the wavelength range from 1 500 to 2 500 nm. The samples have strong absorption in the visible light region with the absorption coefficients of 10
5
cm
-1
order. The energy bandgap (
E
g
) of the film with thickness of 1 042 nm is 1.57 eV
closes to the best optical bandgap of the solar cell materials(1.5 eV).
SnS薄膜射频磁控溅射膜厚晶体结构光学性质
SnS thin filmRF magnetron sputteringfilm thicknesscrystalline structureoptical properties
Ramakrishna Reddy K T, Koteswara Reddy N, Miles R W. Photovoltaic properties of SnS based solar cells [J]. Sol. Energy Mater. Sol. Cells, 2006, 90(18-19):3041-3046.
Banai R E, Lee H, Lewinsohn M, et al. Investigation of the absorption properties of sputtered tin sulfide thin films for photovoltaic applications [C]//38th IEEE Photovoltaic Specialists Conference (PVSC), Austin, USA: IEEE, 2012:164-169.
Avellaneda D, Nair M T S, Nair P K. Photovoltaic structures using chemically deposited tin sulfide thin films [J]. Thin Solid Films, 2009, 517(7):2500-2502.
Yanuar, Guastavino F, Llinares C, et al. SnS thin films grown by close spaced vapor transport [J]. J. Mater. Sci. Lett., 2000, 19(23):2135-2137.
Wei G P, Zhang Z L, Zhao W M, et al. Investing on SnS film by RF sputtering for photovoltaic application [C]//IEEE First World Conference on Photovoltaic Energy Conversion, Waikoloa, USA: IEEE, 1994:365-368.
Ray S C, Karanjai M K, DasGupta D. Structure and photoconductive properties of dip-deposited SnS and SnS2 thin films and their conversion to tin dioxide by annealing in air [J]. Thin Solid Films, 1999, 350(1-2):72-78.
Gou X L, Chen J, Shen P W. Synthesis, characterization and application of SnSx(x=1, 2) nanoparticles [J]. Mater. Chem. Phys., 2005, 93(2-3):557-566.
Yue G H, Wang W, Wang L S, et al. The effect of anneal temperature on physical properties of SnS films [J]. J. Alloys Compd., 2009, 474(1-2):445-449.
Ghosh B, Das M, Banerjee P, et al. Characteristics of metal /p-SnS Schottky barrier with and without post-deposition annealing [J]. Solid State Sci., 2009, 11(2):461-466.
Miles R W, Ogah O E, Zoppi G, et al. Thermally evaporated thin films of SnS for application in solar cell devices [J]. Thin Solid Films, 2009, 517(17):4702-4705.
Turan E, Kul M, Aybek A S, et al. Structural and optical properties of SnS semiconductor films produced by chemical bath deposition [J]. J. Phys. D: Appl. Phys., 2009, 42(24):245408-1-6.
Stadle A, Schimper H J, Brendel U, et al. Analyzing UV/Vis/NIR spectra with the single-layer model-sputtered SnS thin films I: Space-time dependencies [J]. Thin Solid Films, 2011, 519(22):7951-7958.
Hartman K, Johnson J L, Bertoni M I, et al. SnS thin-films by RF sputtering at room temperature [J]. Thin Solid Films, 2011, 519(21):7421-7424.
Banai R E, Lee H, Motyka M A, et al. Optical properties of sputtered SnS thin films for photovoltaic absorbers [J]. IEEE J. Photovolt., 2013, 3(3):1084-1089.
Kumar V, Sharma S K, Sharma T P, et al. Band gap determination in thick films from reflectance measurements [J]. Opt. Mater., 1999, 12(1):115-119.
Bar M, Nishiwaki S, Weinhardt L, et al. Depth-resolved band gap in Cu(In,Ga)(S,Se)2 thin films [J]. Appl. Phys. Lett., 2008, 93(24):244103-1-3.
Sun L, He J, Kong H, et al. Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by pulsed laser deposition method [J]. Sol. Energy Mater. Sol. Cells, 2011, 95(10):2907-2913.
Shaaban E R, El-Kabnayb N, Abou-sehly A M, et al. Determination of the optical constants of thermally evaporated amorphous As40S60, As35S65 and As30S70 using transmission measurements [J]. Physica B, 2006, 381(1-2):24-29.
Selim M S, Gouda M E, El-Shaarawy M G, et al. Effect of thickness on optical properties of thermally evaporated SnS films [J]. Thin Solid Films, 2013, 527(1):164-169.
Mohamed S H, El-Hagary M, Emam-Ismail M. Thickness and annealing effects on the optoelectronic properties of ZnS films [J]. J. Phys. D: Appl. Phys., 2010, 43(7):075401-1-7.
Prathap P, Revathi N, Venkata Subbaiah Y P, et al. Thickness effect on the microstructure morphology and optoelectronic of ZnS [J]. J. Phys.: Condens. Matter, 2008, 20(3):035205-1-10.
0
浏览量
54
下载量
4
CSCD
关联资源
相关文章
相关作者
相关机构