膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响

余亮; 梁齐; 刘磊; 马明杰; 史成武

doi:10.3788/fgxb20153604.0429

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膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响

材料合成及性能 | 更新时间：2020-08-12

- 膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响
- Effect of Thickness on The Structure and Optical Properties of SnS Films Fabricated by RF Magnetron Sputtering
- 发光学报 2015年36卷第4期页码：429-436
- 作者机构：
  
  1. 合肥工业大学电子科学与应用物理学院,安徽合肥,230009
  2. 合肥工业大学化学与化工学院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51272061)资助项目()
- DOI：10.3788/fgxb20153604.0429
  中图分类号： O484.4;TN304
- 纸质出版日期：2015-4-3，
  
  收稿日期：2015-1-7，
  
  修回日期：2015-2-13，
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余亮, 梁齐, 刘磊等. 膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响[J]. 发光学报, 2015,36(4): 429-436

YU Liang, LIANG Qi, LIU Lei etc. Effect of Thickness on The Structure and Optical Properties of SnS Films Fabricated by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2015,36(4): 429-436
余亮, 梁齐, 刘磊等. 膜厚对射频磁控溅射法制备的SnS薄膜结构和光学性质的影响[J]. 发光学报, 2015,36(4): 429-436 DOI： 10.3788/fgxb20153604.0429.

YU Liang, LIANG Qi, LIU Lei etc. Effect of Thickness on The Structure and Optical Properties of SnS Films Fabricated by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2015,36(4): 429-436 DOI： 10.3788/fgxb20153604.0429.

摘要

利用射频磁控溅射法在玻璃衬底上制备SnS薄膜

用X射线衍射(XRD)、能谱仪(EDS)、原子力显微镜(AFM)、场发射扫描电镜(FE-SEM)和紫外-可见-近红外分光光度计(UV-Vis-NIR)分别对所制备的薄膜晶体结构、组分、表面形貌、厚度、反射率和透过率进行表征分析。研究结果表明:薄膜厚度的增加有利于改善薄膜的结晶质量和组分配比

晶粒尺寸和颗粒尺寸随着厚度的增加而变大。样品的折射率在1 500~2 500 nm波长范围内随着薄膜厚度的增加而增大。样品在可见光区域吸收强烈

吸收系数达10

-1

量级。禁带宽度在薄膜厚度增加到1 042 nm时为1.57 eV

接近于太阳电池材料的的最佳光学带隙(1.5 eV)。

Abstract

SnS thin films were prepared on glass substrates by RF magnetron sputtering technique. The crystalline structure

composition

surface morphology

film thickness

transmittance and reflectance of the films were characterized by XRD

EDS

AFM

FE-SEM and UV-Vis-NIR spectroscopy

respectively. The results show that the increase of thin film thickness helps to improve the crystalline quality and component ratio of the film

and the grain sizes and particle sizes increase with the increasing of the film thickness. The refractive index of the sample increases with the increasing of film thickness in the wavelength range from 1 500 to 2 500 nm. The samples have strong absorption in the visible light region with the absorption coefficients of 10

-1

order. The energy bandgap (

) of the film with thickness of 1 042 nm is 1.57 eV

closes to the best optical bandgap of the solar cell materials(1.5 eV).

关键词

SnS薄膜射频磁控溅射膜厚晶体结构光学性质

Keywords

SnS thin filmRF magnetron sputteringfilm thicknesscrystalline structureoptical properties

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