红色荧光粉La2Mo2O9:Eu3+,W6+的制备及发光性能

刘永; 程萍; 杨至雨; 张天觉; 郭强; 马讯; 汪正良

doi:10.3788/fgxb20153604.0424

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红色荧光粉La₂Mo₂O₉:Eu³⁺,W⁶⁺的制备及发光性能

材料合成及性能 | 更新时间：2020-08-12

- 红色荧光粉La₂Mo₂O₉:Eu³⁺,W⁶⁺的制备及发光性能
- Preparation and Luminescence Properties of La₂Mo₂O₉:Eu³⁺,W⁶⁺ Red-emitting Phosphors
- 发光学报 2015年36卷第4期页码：424-428
- 作者机构：
  
  云南民族大学化学与生物技术学院民族地区矿业资源综合利用重点实验室,云南昆明,650500
- 作者简介：
- 基金信息：
  
  国家自然科学基金(21261027)();云南民族大学本科生SRT创新项目(2013HXSRT12)资助()
- DOI：10.3788/fgxb20153604.0424
  中图分类号： O482.31
- 纸质出版日期：2015-4-3，
  
  网络出版日期：2014-12-26，
  
  收稿日期：2014-12-8，
  
  修回日期：2014-12-23，
扫描看全文
刘永, 程萍, 杨至雨等. 红色荧光粉La2Mo2O9:Eu3+,W6+的制备及发光性能[J]. 发光学报, 2015,36(4): 424-428

LIU Yong, CHENG Ping, YANG Zhi-yu etc. Preparation and Luminescence Properties of La2Mo2O9:Eu3+,W6+ Red-emitting Phosphors[J]. Chinese Journal of Luminescence, 2015,36(4): 424-428
刘永, 程萍, 杨至雨等. 红色荧光粉La2Mo2O9:Eu3+,W6+的制备及发光性能[J]. 发光学报, 2015,36(4): 424-428 DOI： 10.3788/fgxb20153604.0424.

LIU Yong, CHENG Ping, YANG Zhi-yu etc. Preparation and Luminescence Properties of La2Mo2O9:Eu3+,W6+ Red-emitting Phosphors[J]. Chinese Journal of Luminescence, 2015,36(4): 424-428 DOI： 10.3788/fgxb20153604.0424.

摘要

采用高温固相法合成出La

:Eu

系列红色荧光粉

其结构为立方晶系的- La

。在395 nm光激发下

样品La

1.40

:0.60Eu

发射出很强的红光

最强发射峰位于616 nm处。适量地掺杂W

离子可以提高样品的激发和发射强度

在395 nm光激发下

1.40

1.84

:0.60Eu

0.16W

荧光粉的Eu

的

跃迁发射强度最大

是样品La

1.40

:0.60Eu

的1.23倍。最后

将La

1.40

0.60

1.84

:0.16W

荧光粉与~395 nm发射的InGaN芯片一起制作成红光发光二极管(LED)

该LED发射出很强的红光。

Abstract

Red-emitting phosphors La

:Eu

and La

:Eu

were synthesized by the conventional solid state method. The structure and luminescent properties of these phosphors were investigated. The results indicate that these phosphors are of single phases with cubic crystal structure. La

:Eu

and La

:Eu

can be efficiently excited by near ultraviolet light

and the strongest excitation peak is at 395 nm. The emission intensity of La

:Eu

can be enhanced by introducing W

ions. La

1.40

0.60

1.84

:0.16W

exhibites the strongest red emission

which is about 1.23 times than that of La

1.40

:0.60Eu

. The red light emitting diode (LED) was fabricated by coating InGaN chip (~395 nm emission) with the phosphor La

1.40

0.60

1.84

:0.16W

and red bright light could be observed from the LED. Hence La

1.40

0.60

1.84

:0.16W

maybe find application on near-UV InGaN-based white LEDs.

关键词

红色荧光粉发光二极管发光性能La2Mo2O9

Keywords

red phosphorLEDluminescent propertiesLa2Mo2O9

references

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Dai Q L, Foley M E, Breshike C J, et al. Ligand-passivated Eu:Y2O3 nanocrystals as a phosphor for white light emitting diodes [J]. J. Am. Chem. Soc., 2011, 133(39):15475-15486.

Chen L, Lin C C, Yeh C W, et al. Light converting inorganic phosphors for white light-emitting diodes [J]. Materials, 2010, 3(3):2172-2195.

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Zhang Y L, Xiong L, Li X F, et al. Luminescence investigation of Eu3+ activated molybdates red phosphors and their applications in near-UV light-emitting diodes [J]. Mater. Sci. Eng. B, 2012, 177:341-344.

Wang Z L, He P, Wang R, et al. New red phosphor for near-ultraviolet light-emitting diodes with high color-purity [J]. Mater. Res. Bull., 2010, 45(2):240-242.

Wang Z L, Liang H B, Wang J, et al. Red-light-emitting diodes fabricated by near-ultraviolet InGaN chips with molybdate phosphors [J]. Appl. Phys. Lett., 2006, 89(7):071921-1-3.

Li X, Yang Z P, Guan L, et al. Luminescent properties of Eu3+-doped La2Mo2O9 red phosphor by the flux method [J]. J. Cryst. Growth, 2008, 310(12):3117-3120.

Khadasheva Z S, Venskovskii N U, Safronenko M G, et al. Synthesis and properties of La2 (Mo1-xMx)2O9(M= Nb, Ta) ionic conductors [J]. Inorg. Mater., 2002, 38(11):1168-1171.

Fang Q F, Wang X P. Low frequency internal friction of oxide ion-conductor La2Mo2O9 [J]. Solid State Phenom., 2003, 89:293-298.

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