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浙江大学 硅材料国家重点实验室,浙江 杭州,310027
纸质出版日期:2015-4-3,
收稿日期:2015-1-15,
修回日期:2015-2-11,
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沙一平, 朱辰, 赵泽钢等. TiO<sub>2</sub>薄膜的硼掺杂对TiO<sub>2</sub>/p<sup>+</sup>-Si异质结器件电致发光的增强[J]. 发光学报, 2015,36(4): 389-394
SHA Yi-ping, ZHU Chen, ZHAO Ze-gang etc. Enhancement of Electroluminescence from TiO<sub>2</sub>/p<sup>+</sup>-Si Heterostructured-based Devices Through Boron-doping of TiO<sub>2</sub> Films[J]. Chinese Journal of Luminescence, 2015,36(4): 389-394
沙一平, 朱辰, 赵泽钢等. TiO<sub>2</sub>薄膜的硼掺杂对TiO<sub>2</sub>/p<sup>+</sup>-Si异质结器件电致发光的增强[J]. 发光学报, 2015,36(4): 389-394 DOI: 10.3788/fgxb20153604.0389.
SHA Yi-ping, ZHU Chen, ZHAO Ze-gang etc. Enhancement of Electroluminescence from TiO<sub>2</sub>/p<sup>+</sup>-Si Heterostructured-based Devices Through Boron-doping of TiO<sub>2</sub> Films[J]. Chinese Journal of Luminescence, 2015,36(4): 389-394 DOI: 10.3788/fgxb20153604.0389.
利用磁控溅射在重掺硼硅(p
+
-Si)衬底上分别沉积TiO
2
薄膜和掺硼的TiO
2
(TiO
2
:B)薄膜
并经过氧气氛下600 ℃热处理
由此形成相应的TiO
2
/p
+
-Si和TiO
2
:B/p
+
-Si异质结。与TiO
2
/p
+
-Si异质结器件相比
TiO
2
:B/p
+
-Si异质结器件的电致发光有明显的增强。分析认为:TiO
2
:B薄膜经过热处理后
B原子进入TiO
2
晶格的间隙位
引入了额外的氧空位
而氧空位是TiO
2
/p
+
-Si异质结器件电致发光的发光中心
所以上述由B掺杂引起的氧空位浓度的增加是TiO
2
:B/p
+
-Si异质结器件电致发光增强的原因。
TiO
2
/p
+
-Si and TiO
2
:B/p
+
-Si heterostructures were formed by sputtering TiO
2
films and boron-doped TiO
2
(TiO
2
:B) films on heavily boron-doped silicon (p
+
-Si) substrates
respectively
followed by annealing at 600 ℃ in O
2
ambient. In contrast with the TiO
2
/p
+
-Si heterostructured devices
the TiO
2
:B/p
+
-Si counterpart exhibits markedly enhanced electroluminescence (EL). It is derived that the doped B atoms in TiO
2
:B films enter into the interstitial sites of TiO
2
lattice after annealing at high temperature
which introduces excess oxygen vacancies. The increase of the concentration of oxygen vacancies due to B-doping leads to the enhancement of EL from the TiO
2
:B/p
+
-Si heterostructured devices because oxygen vacancies are the light-emitting centers of the TiO
2
/p
+
-Si heterostructured devices.
TiO2薄膜硼掺杂异质结电致发光
TiO2 filmsboron-dopingheterostructureelectroluminescence
Mei L F, Liang K M, Wang H E. N-doping TiO2 thin film prepared by heat treatment in electric field [J]. Catal. Commun., 2007, 8(8):1187-1190.
Li D D, She J B, Wang L L, et al. Research progress in fiber typed photocatalytic reactor with titanium dioxide loading [J]. Chin. Opt.(中国光学), 2013, 6(4):513-520 (in Chinese).
Cao L F, Bian F L, Wang Y X, et al. TiO2 micro-structure and photocurrent characteristics based on AAC template [J]. Chin. J. Lumin.(发光学报), 2014, 35(1):79-83 (in Chinese).
Zhang W J, Li Y, Zhu S L, et al. Surface modification of TiO2 film by iron doping using reactive magnetron sputtering [J]. Chem. Phys. Lett., 2003, 373(3-4):333-337.
Na-Phattalung S, Smith M F, Kim K, et al. First-principles study of native defects in anatase TiO2 [J]. Phys. Rev. B, 2006, 73(12):125205-1-6.
Munnix S, Schmeits M. Origin of defect states on the surface of TiO2 [J]. Phys. Rev. B, 1985, 31(6):3369-3371.
Plugaru R, Cremades A, Piqueras J. The effect of annealing in different atmospheres on the luminescence of polycrystalline TiO2 [J]. J. Phys.: Condens. Matter, 2004, 16(2):S261-S268.
Nakamura I, Negishi N, Kutsuna S, et al. Role of oxygen vacancy in the plasma-treated TiO2 photocatalyst with visible light activity for NO removal [J]. J. Mol. Catal. A: Chem., 2000, 161(1-2):205-212.
Zhang Y Y, Ma X Y, Chen P L, et al. Electroluminescence from TiO2/p+-Si heterostructure [J]. Appl. Phys. Lett., 2009, 94(6):061115-1-3.
Zhang Y Y, Ma X Y, Chen P L, et al. Enhancement of electroluminescence from TiO2/p+-Si heterostructure based devices through engineering of oxygen vacancies in TiO2 [J]. Appl. Phys. Lett., 2009, 95(25):252102-1-3.
Di Valentin C, Pacchioni G, Selloni A. Origin of the different photoactivity of N-doped anatase and rutile TiO2 [J]. Phys. Rev. B, 2009, 70(8):085116-1-4.
Livraghi S, Paganini M C, Giamello E. Origin of photoactivity of nitrogen-doped titanium dioxide under visible light [J]. J. Am. Chem. Soc., 2006, 128(49):15666-15671.
Di Valentin C, Pacchioni G, Selloni A. Theory of carbon doping of titanium dioxide [J]. Chem. Mater., 2005, 17(26):6656-6665.
Lu N, Quan X, Li J Y, et al. Fabrication of boron-doped TiO2 nanotube array electrode and investigation of its photoelectrochemical capability [J]. J. Phys. Chem. C, 2007, 111(32):11836-11842.
Moon S C, Mametsuka H, Tabata S, et al. Photocatalytic production of hydrogen from water using TiO2 and B/TiO2 [J]. Catal. Today, 2000, 58(2-3):125-132.
In S, Orlov A, Berg R, et al. Effective visible light-activated B-doped and B, N-codoped TiO2 photocatalysts [J]. J. Am. Chem. Soc., 2007, 129(45):13790-13791.
Fittipaldia M, Gombac V, Montini T, et al. A high-frequency (95 GHz) electron paramagnetic resonance study of B-doped TiO2 photocatalysts [J]. Inorg. Chim. Acta, 2008, 361(14-15):3980-3987.
Xu H, Picca R A, De Marco L, et al. Nonhydrolytic route to boron-doped TiO2 nanocrystals [J]. Eur. J. Inorg. Chem., 2013, 2013(3):364-374.
Gombac V, De Rogatis L, Gasparotto A, et al. TiO2 nanopowders doped with boron and nitrogen for photocatalytic applications [J]. Chem. Phys., 2007, 339(1-3):111-123.
Finazzi E, Di Valentin C, Pacchioni G. Boron-doped anatase TiO2: Pure and hybrid DFT calculations [J]. J. Phys. Chem. C, 2009, 113(1):220-228.
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