溅射气氛对N掺杂ZnO薄膜性能的影响

高丽丽; 刘军胜; 宋文福; 张跃林

doi:10.3788/fgxb20153603.0317

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溅射气氛对N掺杂ZnO薄膜性能的影响

材料合成及性能 | 更新时间：2020-08-12

- 溅射气氛对N掺杂ZnO薄膜性能的影响
- Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films
- 发光学报 2015年36卷第3期页码：317-321
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 北华大学物理学院,吉林吉林,132013
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20153603.0317
  中图分类号： O472;O484.4
- 纸质出版日期：2015-3-3，
  
  收稿日期：2014-12-25，
  
  修回日期：2015-1-24，
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高丽丽, 刘军胜, 宋文福等. 溅射气氛对N掺杂ZnO薄膜性能的影响[J]. 发光学报, 2015,36(3): 317-321

GAO Li-li, LIU Jun-sheng, SONG Wen-fu etc. Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2015,36(3): 317-321
高丽丽, 刘军胜, 宋文福等. 溅射气氛对N掺杂ZnO薄膜性能的影响[J]. 发光学报, 2015,36(3): 317-321 DOI： 10.3788/fgxb20153603.0317.

GAO Li-li, LIU Jun-sheng, SONG Wen-fu etc. Effect of Sputtering Ambient on The Properties of N Doped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2015,36(3): 317-321 DOI： 10.3788/fgxb20153603.0317.

摘要

利用磁控溅射系统

和Ar作为溅射气体

生长N掺杂ZnO薄膜。溅射气氛中氮气流量分别为0

32 mL/min

通过改变氮气的流量

研究薄膜性能的变化。结果发现

随着溅射气氛中氮气流量的增加

薄膜的电阻率增加

薄膜中N

与(N

)

的掺杂浓度同时在变大。当氮气流量为8 mL/min时

N的有效掺杂效率最高。另外

随着溅射气氛中氮气流量的增加

薄膜的厚度在减小。

Abstract

Using radio frequency magnetron sputtering technique

N doped ZnO films were prepared on quartz substrate with mixture of nitrogen and argon as sputtering gas

and the nitrogen flux was 0

32 mL/min

respectively. The effects of the nitrogen flux on the structure and properties of N doped ZnO thin films were investigated. It is found that the resistivity of the films increases with the increasing of the nitrogen flux

and the content of N

and (N

)

increases

too. When the nitrogen flux is 8 mL/min

the deposited film has the best effective doping efficiency of nitrogen. Furthermore

the thickness of ZnO: N films decreases with the nitrogen flux increasing.

关键词

ZnO薄膜N掺杂溅射气氛光电性能

Keywords

thin ZnO filmsN dopedsputtering ambientphotoelectric properties

references

Tang Z K, Wong G K L, Yu P, et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J]. Appl. Phys. Lett., 1998, 72(25):3270-3272.

Fan X W. Research progress on growth and optical properties of wide band gap Ⅱ-Ⅵ compound semiconductors and its low dimensional structure [J]. Chin. J. Lumin.(发光学报), 2002, 23(4):317-329 (in Chinese).

Shen D Z, Mei Z X, Liang H L, et al. ZnO-based matierial, heterojunction and photoelctronic device [J]. Chin. J. Lumin.(发光学报), 2014, 35(1):1-60 (in Chinese).

Wei Z P, Wu C X, Lu Y M, et al. MgxZn1-xO alloy grown by p-MBE and optical properties of MgZnO/ZnO heterostructure [J]. Chin. J. Lumin.(发光学报), 2006, 27(5):831-833 (in Chinese).

Tsukazaki A, Ohtomo A, Onuma T, et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J]. Nat. Mater., 2005, 4(1):42-46.

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Reynolds J G, Reynolds C L, Mohanta A, et al. Shallow acceptor complexes in p-type ZnO [J]. Appl. Phys. Lett., 2013, 102(15):152114-1-3.

Liu L, Xu J L, Wang D D, et al. P-type conductivity in N-doped ZnO: The role of the NZn-VO complex [J]. Phys. Rev. Lett., 2012, 108(21):215501-1- 3.

Perkins C L, Lee S H, Li X N, et al. Identification of nitrogen chemical states in N-doped ZnO via X-ray photoelectron spectroscopy [J]. J. Appl. Phys., 2005, 97(3):034907-1-7.

Xing G Z, Yao B, Cong C X, et al. Effect of annealing on conductivity behavior of undoped zinc oxide prepared by RF magnetron sputtering [J]. J. Alloys Compd., 2008, 457(1-2):36-41.

Chong C X. Preparation, Structures and Properties of MgZnO Alloy Thin Films. Changchun: Jilin University, 2007(in Chinese).

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