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1. 昆明理工大学材料科学与工程学院,云南 昆明,650093
2. 昆明理工大学 冶金与能源工程学院,云南 昆明,650093
纸质出版日期:2015-3-3,
收稿日期:2014-12-10,
修回日期:2015-1-6,
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张步豪, 李法社, 余雪. Tm<sup>3+</sup>掺杂SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup>的光激励和热释光性能[J]. 发光学报, 2015,36(3): 299-304
ZHANG Bu-hao, LI Fa-she, YU Xue. Photo-stimulated and Thermo Luminescence Properties of Tm<sup>3+</sup> Doped SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup> Phosphors[J]. Chinese Journal of Luminescence, 2015,36(3): 299-304
张步豪, 李法社, 余雪. Tm<sup>3+</sup>掺杂SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup>的光激励和热释光性能[J]. 发光学报, 2015,36(3): 299-304 DOI: 10.3788/fgxb20153603.0299.
ZHANG Bu-hao, LI Fa-she, YU Xue. Photo-stimulated and Thermo Luminescence Properties of Tm<sup>3+</sup> Doped SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup> Phosphors[J]. Chinese Journal of Luminescence, 2015,36(3): 299-304 DOI: 10.3788/fgxb20153603.0299.
通过高温固相法制备出Sr
0.98-
x
Al
2
O
4
:0.02Eu
2+
x
Tm
3+
(
x
=0
0.01
0.02
0.03
0.04
0.05)系列样品
并对其光激励和热释光性能进行了研究。在SrAl
2
O
4
:Eu
2+
原有陷阱能级结构的基础上
通过Tm
3+
的掺杂引入了更深的陷阱T
B
并增加原有陷阱T
A
浓度
进而优化了材料的光存储容量及光激励特性。对比研究了系列样品的初始光激励发光强度和热释光强度随着Tm
3+
掺杂量的变化规律
证实陷阱T
B
为光激励发光提供了有效俘获中心。当Tm
3+
的掺杂摩尔分数
x
=0.03时
材料中的陷阱T
B
的浓度达到最高值
同时光激励发光强度最大。对比Tm
3+
共掺前后热释光图谱
通过Chen's半宽法计算出了引入陷阱T
B
的陷阱深度。实验结果证实材料中T
B
的浓度对其光激励发光性能起着决定性的作用。在980 nm激发下
由深陷阱T
B
释放出来的电子可以再次被浅陷阱T
A
俘获
这种浅陷阱T
A
的再俘获效应在光激励发光过程中表现为光激励余辉现象。
A series of electron capture materials Sr
0.98-
x
Al
2
O
4
:0.02Eu
2+
x
Tm
3+
(
x
=0
0.01
0.02
0.03
0.04
0.05) were synthesized by a conventional solid-state reaction method. The deeper new trap (T
B
) was introduced into the SrAl
2
O
4
:Eu
2+
phosphor lattice by the co-dopant of Tm
3+
ions to optimize the properties of the ETM phosphor. Meanwhile
the trap concentration of intrinsic shallow trap (T
A
) was increased. The properties of photo-stimulated luminescence (PSL) and thermoluminescence (TL) in the series samples were investigated. It is found that T
B
is responsible for the performance of PSL. The most efficient initial PSL can be obtained when the co-doping mole fraction of Tm
3+
is 0.03
which keeps the correspondence with the strongest TL intensity of T
B
. Besides
the phosphors show a PSL afterglow under 980 nm stimulation
which can be ascribed to the re-trapping of T
A
as the electrons firstly excited from T
B
will be re-trapped by the empty T
A
to generate the PSL afterglow.
载流子光激励热释光陷阱
electron capturephoto-stimulated luminescencethermo luminescencetrap
Lindmayer J. A new erasable optical memory [J]. Solid State Technol., 1988, 31(8):135-138.
Liu F, Yan W, Chuang Y J, et al. Photostimulated near-infrared persistent luminescence as a new optical read-out from Cr3+-doped LiGa5O8 [J]. Sci. Rep., 2013, 3:1554-1554.
Zhang J, Qin Q, Yu M, et al. The photoluminescence, afterglow and up conversion photostimulated luminescence of Eu3+ doped Mg2SnO4 phosphors [J]. J. Lumin., 2012, 132(1):23-26.
Liu X, Zhang J, Zhang X, et al. Strongly enhancing photostimulated luminescence by doping Tm3+ in Sr3SiO5:Eu2+ [J]. Opt. Lett., 2013, 38(2):148-150.
Dek P, Aradi B, Frauenheim T. Quantitative theory of the oxygen vacancy and carrier self-trapping in bulk TiO2 [J]. Phys. Rev. B, 2012, 86(19):195206-1-8.
Aitasalo T, Hls J, Jungner H, et al. Effect of temperature on the luminescence processes of SrAl2O4:Eu2+ [J]. Radiat. Meas., 2004, 38(4):727-730.
Korthout K, Van de Eeckhout K, Botterman J, et al. Luminescence and X-ray absorption measurements of persistent SrAl2O4:Eu,Dy powders: Evidence for valence state changes [J]. Phys. Rev. B, 2011, 84(8):085140-1-19.
Zhang Z, Xu X, Qiu J, et al. Photo-stimulated and long persistent luminescence properties of Sr3SiO5:Eu2+,RE3+ (RE=Nd3+, Ho3+, La3+) [J]. Spectrosc. Spect. Anal.(光谱学与光谱分析), 2014, 34(6):1486-1491 (in Chinese).
Zhang X, Xu X, He Q, et al. Significant improvement of photo-stimulated luminescence of Ba4(Si3O8)2:Eu2+ by co-doping with Tm3+ [J]. ECS J. Solid State Sci. Technol., 2013, 2(11):R225-R229.
Xu X, Wang Y, Gong Y, et al. Effect of oxygen vacancies on the red phosphorescence of Sr2SnO4:Sm3+ phosphor [J]. Opt. Express, 2010, 18(16):16989-16994.
Zhang B, Xu X, Li Q, et al. Long persistent and optically stimulated luminescence behaviors of calcium aluminates with different trap filling processes [J]. J. Solid State Chem., 2014, 217:136-141.
Chen R. On the calculation of activation energies and frequency factors from glow curves [J]. J. Appl. Phys., 1969, 40(2):570-585.
Forsythe E, Morton D, Tang C, et al. Trap states of tris-8-(hydroxyquinoline) aluminum and naphthyl-substituted benzidine derivative using thermally stimulated luminescence [J]. Appl. Phys. Lett., 1998, 73(11):1457-1459.
Guo N, Huang Y, Yang M, et al. A tunable single-component warm white-light Sr3Y (PO4)3:Eu 2+, Mn2+ phosphor for white-light emitting diodes [J]. Phys. Chem. Chem. Phys., 2011, 13(33):15077-15082.
Dorenbos P. Mechanism of persistent luminescence in Eu2+ and Dy3+ codoped aluminate and silicate compounds [J]. J. Electrochem. Soc., 2005, 152(7):H107-H110.
Dorenbos P. Mechanism of persistent luminescence in Sr2MgSi2O7:Eu2+,Dy3+ [J]. Phys. Stat. Sol.(b), 2005, 242(1):R7-R9.
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