两步生长法生长的InxGa1-xAs/GaAs材料及性质

韩智明; 缪国庆; 曾玉刚; 张志伟

doi:10.3788/fgxb20153603.0288

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两步生长法生长的In_xGa_1-xAs/GaAs材料及性质

材料合成及性能 | 更新时间：2020-08-12

- 两步生长法生长的In_xGa_1-xAs/GaAs材料及性质
- Properties of InGaAs Deposited on GaAs Substrate with Two-step Growth
- 发光学报 2015年36卷第3期页码：288-292
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
- 作者简介：
- 基金信息：
  
  "();973"();国家重点基础研究发展计划(2012CB619201)();吉林省科技发展计划(20140520117JH)资助项目()
- DOI：10.3788/fgxb20153603.0288
  中图分类号： O472.3;O484.4
- 纸质出版日期：2015-3-3，
  
  网络出版日期：2015-1-12，
  
  收稿日期：2014-9-10，
  
  修回日期：2014-10-5，
扫描看全文
韩智明, 缪国庆, 曾玉刚等. 两步生长法生长的InxGa1-xAs/GaAs材料及性质[J]. 发光学报, 2015,36(3): 288-292

HAN Zhi-ming, MIAO Guo-qing, ZENG Yu-gang etc. Properties of InGaAs Deposited on GaAs Substrate with Two-step Growth[J]. Chinese Journal of Luminescence, 2015,36(3): 288-292
韩智明, 缪国庆, 曾玉刚等. 两步生长法生长的InxGa1-xAs/GaAs材料及性质[J]. 发光学报, 2015,36(3): 288-292 DOI： 10.3788/fgxb20153603.0288.

HAN Zhi-ming, MIAO Guo-qing, ZENG Yu-gang etc. Properties of InGaAs Deposited on GaAs Substrate with Two-step Growth[J]. Chinese Journal of Luminescence, 2015,36(3): 288-292 DOI： 10.3788/fgxb20153603.0288.

摘要

利用LP-MOCVD技术

采用两步生长法在GaAs(100)单晶衬底上外延生长In

As材料。通过扫描电子显微镜(SEM)与原子力显微镜(AFM)观察了缓冲层厚度对外延层表面形貌、表面粗糙度的影响;利用X射线衍射(XRD)分析了缓冲层厚度对外延层结晶质量的影响;利用拉曼光谱分析了缓冲层厚度对外延层材料合金有序度的影响;通过透射电子显微镜(TEM)观察了外延层材料位错的分布状态

计算了外延层的位错密度。实验结果表明

两步生长法生长的In

As/GaAs异质结材料的缓冲层厚度存在一个最优值。

Abstract

As was deposited on (100) GaAs substrate by MOCVD with the two-step growth. The effects of buffer layer thickness on the surface morphology

crystalline quality

and alloy order degree of the epilayer were analyzed by SEM

AFM

XRD

and Raman spectroscopy

respectively. The distribution of dislocations in epilayer was observed by TEM and the dislocation density was calculated. The experiment results show that the buffer layer thickness of In

As heterostructure has the optimal value.

关键词

两步生长法GaAsInGaAsMOCVD

Keywords

two step growthGaAsInGaAsMOCVD

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