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1. 盐城工学院 材料工程学院,江苏 盐城,224051
2. 中国科学院上海硅酸盐研究所 透明与光功能无机材料重点实验室 上海,201800
纸质出版日期:2015-3-3,
网络出版日期:2014-12-31,
收稿日期:2014-11-27,
修回日期:2015-1-6,
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俞平胜, 苏良碧, 徐军. 掺杂的Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub>晶体的近红外发光性能[J]. 发光学报, 2015,36(3): 283-287
YU Ping-sheng, SU Liang-bi, XU Jun. Near-infrared Luminescence in Doped Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12 </sub>Crystals[J]. Chinese Journal of Luminescence, 2015,36(3): 283-287
俞平胜, 苏良碧, 徐军. 掺杂的Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub>晶体的近红外发光性能[J]. 发光学报, 2015,36(3): 283-287 DOI: 10.3788/fgxb20153603.0283.
YU Ping-sheng, SU Liang-bi, XU Jun. Near-infrared Luminescence in Doped Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12 </sub>Crystals[J]. Chinese Journal of Luminescence, 2015,36(3): 283-287 DOI: 10.3788/fgxb20153603.0283.
生长了Mg、Ca离子掺杂(提拉法)和Cl离子掺杂(坩埚下降法)的Bi
4
Ge
3
O
12
(BGO)晶体
测试了晶体样品的吸收谱、光致发光谱和发光衰减时间等。这些掺杂的BGO晶体的可见光发光比纯BGO有所减弱
但在808 nm和980 nm激光二极管(LD)激发下出现了纯BGO几乎没有的近红外发光
归因于改变了能级的Bi离子或可能出现的低价态Bi离子。掺杂对近红外发光的影响跟掺杂离子价态有关
同价态的掺杂离子对近红外发光的影响相差不大。
Mg and Ca doped Bi
4
Ge
3
O
12
(BGO) crystals were grown by using Czochralski (Cz) technique
and Cl doped BGO crystal was prepared by Vertical Bridgman (VB) method. The absorption
photoluminescence (PL) and PL lifetime spectra were systematically investigated. The results reveal that the emission intensity of these doped BGO is weaker than that of pure BGO in visible region. Near infrared (NIR) emission is observed in doped BGO under 808 nm and/or 980 nm laser diodes (LDs) excitation
and the NIR emission should be ascribed to a changed Bi-related active center or lower valence Bi ions. The valence state of doped ions could be key to achieving the NIR emission in BGO crystals
and the doped ions with same valence could play the similar roles in our experiments.
Bi4Ge3O12光致发光近红外
Bi4Ge3O12photoluminescencenear infrared
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Sasano M, Nishioka H, Okuyama S, et al. Geometry dependence of the light collection efficiency of BGO crystal scintillators read out by avalanche photo diodes [J]. Nucl. Instrum. Meth. A, 2013, 715:105-111.
Nitsche R. Crystal growth and electro-optic effect of bismuth germanate, Bi4(GeO4)3 [J]. J. Appl. Phys., 1965, 36 (8):2358-2360.
Weber M J, Monchamp R R. Luminescence of Bi4Ge3O12: Spectral and decay properties [J]. J. Appl. Phys., 1973, 44 (12):5495-5499.
Nestor O H, Huang C Y. Bismuth germinate: A high-Z gamma-ray and charged particle detector [J]. IEEE Trans. Nucl. Sci., 1975, NS-2:68-72.
Marinova V, Petrova D, Lin S H, et al. Optical and holographic properties of Fe+Mn co-doped Bi4Ge3O12 crystals [J]. Opt. Commun., 2008, 281(1):37-43.
Shim J B, Yoshikawa A, Bensalah A, et al. Luminescence, radiation damage, and color center creation in Eu3+-doped Bi4Ge3O12 fiber single crystals [J]. J. Appl. Phys., 2003, 93(9):5131-5135.
Jin Y, Wang Q P. Crystal structure and photoluminescence properties of MPO4:Eu3+,Bi3+/Tb3+ (M=La, Gd, Y) phosphors [J]. Chin. J. Lumin.(发光学报), 2014, 35(1):61-65 (in Chinese).
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Guo X, Li H J, Su L B, et al. Study on multiple near-infrared luminescent centers and effects of aluminum ions in Bi2O3-GeO2 glass system [J]. Opt. Mater., 2012, 34(4):675-678.
Peng M Y, Wang C, Chen D P, et al. Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification [J]. J. Non-Cryst. Solids, 2005, 351(30-32):2388-2393.
Tang Y G, He M, Cui J C, et al. Senamont based measuring method for birefringence of infrared crystal [J]. Opt. Precision Eng.(光学 精密工程), 2012, 20(10):2176-2183 (in Chinese).
Wang S T, Zhang W, Wang Q. Measurement for detectivity of infrared detectors in low temperature background [J]. Opt. Precision Eng.(光学 精密工程), 2012, 20(3):484-491 (in Chinese).
Guo X, Li H J, Su L B, et al. Near-infrared broadband luminescence in Bi2O3-GeO2 binary glass system [J]. Laser Phys., 2011, 21:901-905.
Jackson R A, Valerio M E G. Computer modelling of radiation generated defects in BGO scintillators [J].Nucl. Instrum. Meth. B, 2004, 218:145-147.
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