GaN纳米柱发光特性

杨华; 谢自力; 戴姜平; 修向前; 赵红; 陈鹏; 张荣; 施毅; 韩平; 郑有炓

doi:10.3788/fgxb20153603.0279

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GaN纳米柱发光特性

材料合成及性能 | 更新时间：2020-08-12

- GaN纳米柱发光特性
- Luminescence Property of GaN Nanorod
- 发光学报 2015年36卷第3期页码：279-282
- 作者机构：
  
  1. 南京大学江苏省光电功能材料重点实验室,江苏南京,210093
  2. 南京大学电子科学与工程学院,江苏南京,210093
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展规划(2011CB301900,2012CB619304)();国家高技术研究发展规划(2014AA032605)();国家自然科学基金(60990
- DOI：10.3788/fgxb20153603.0279
  中图分类号： O472+.3;O482.31
- 纸质出版日期：2015-3-3，
  
  网络出版日期：2015-1-12，
  
  收稿日期：2014-11-17，
  
  修回日期：2015-1-6，
扫描看全文
杨华, 谢自力, 戴姜平等. GaN纳米柱发光特性[J]. 发光学报, 2015,36(3): 279-282

YANG Hua, XIE Zi-li, DAI Jiang-ping etc. Luminescence Property of GaN Nanorod[J]. Chinese Journal of Luminescence, 2015,36(3): 279-282
杨华, 谢自力, 戴姜平等. GaN纳米柱发光特性[J]. 发光学报, 2015,36(3): 279-282 DOI： 10.3788/fgxb20153603.0279.

YANG Hua, XIE Zi-li, DAI Jiang-ping etc. Luminescence Property of GaN Nanorod[J]. Chinese Journal of Luminescence, 2015,36(3): 279-282 DOI： 10.3788/fgxb20153603.0279.

摘要

用自组装的Ni纳米岛做掩模通过ICP刻蚀得到GaN纳米柱

采用扫描电子显微镜(SEM)观测其形貌

室温下光致发光(PL)谱测量研究样品发光特性。结果表明

室温下GaN 纳米柱的发光强度是体材料的2.6倍。为了修复刻蚀损伤

用KOH对样品进行湿法处理

发现经KOH处理的纳米柱与处理前相比变得更直

且其发光较处理之前进一步增强。为了研究其原因

分别对KOH处理前后的样品进行变温PL谱的测量

发现湿法处理后发光增强是由于内量子效率的提高引起的。

Abstract

GaN nanorods were fabricated by ICP using Ni self-assembled nanodots as etching mask.The morphology was checked by scanning electron microscopy (SEM)

and the optical property was characterized by the photoluminescence (PL) spectra at room temperature. The PL intensity of GaN nanorods was enhanced about 2.6 times compared to that of as-grown GaN films. Then

GaN nanorods were dipped into the KOH solution for 40 min in order to heal the etch damage. After the treatment

the PL intensity was enhanced again. The temperature-dependent PL was measured to estimate IQE. The results show that the enhancement of PL intensity is due to the higher IQE after the KOH treatment.

关键词

GaN纳米柱KOH腐蚀光致发光内量子效率

Keywords

GaN nanorodKOH treatmentphotoluminescence(PL)quantum efficiency

references

Hong K B, Yang J J, Lu T C. Blue-violet GaN-based photonic crystal surface emitting lasers [J]. Chin. Opt.(中国光学), 2014, 7(4):559-571 (in Chinese).

Kang L, Liu B L, Cai J F, et al. Optical properties of silicon-doped InGaN and GaN layers [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2004, 19(4):266-269 (in Chinese).

Huang H W, Kao C C, Hsueh T H, et al. Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching [J]. Mater. Sci. Eng. B, 2004, 113(2):125-129.

Chiu C H, Lu T C, Huang H W, et al. Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands [J]. Nanotechnology, 2007, 18(44):445201-1-5.

Yu C C, Chu C F, Tsai J Y, et al. Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching [J]. Jpn. J. Appl. Phys., 2002, 41(8B):910-912.

Paramanik D, Motayed A, Aluri G S, et al. Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme [J]. J. Vac. Sci. Technol. B, 2012, 30(5):052202-1-13.

Zhu J H, Wang L J, Zhang S M, et al. The fabrication of GaN-based nanopillar light-emitting diodes [J]. J. Appl. Phys., 2010, 108(7):074302-1-4.

Yang G F, Guo Y, Zhu H X, et al. Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks [J]. Appl. Surf. Sci., 2013, 285:772-777.

Lin Z Q, Xiu X Q, Zhang S Y, et al. Arrays of GaN nano-pillars fabricated by nickel nano-island mask [J]. Mater. Lett., 2013, 108:250-252.

Hsu Y C, Sou K P, Chang S P, et al. Room temperature ultraviolet GaN metal-coated nanorod laser [J]. Appl. Phys. Lett., 2013, 103(19):191102-1-4.

Cabalu J S, Thomidis C, Moustakas T D, et al. Enhanced internal quantum efficiency and light extraction efficiency from textured GaN/AlGaN quantum wells grown by molecular beam epitaxy [J]. J. Appl. Phys., 2006, 99(6):064904-1-6.

Keller S, Schaake C, Fichtenbaum N A, et al. Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi-quantum wells [J]. J. Appl. Phys., 2006, 100(5):054314-1-7.

Neufeld C J, Schaake C, Grundmann M, et al. InGaN/GaN nanopillar-array light emitting diodes [J]. Phys. Stat. Sol.(c), 2007, 4(5):1605-1608.

Polyakov A Y, Jeon D W, Smirnov N B, et al. Electrical and luminescent properties and deep traps spectra in GaN nanopillar layers prepared by dry etching [J]. J. Appl. Phys., 2012, 112(7):073112-1-6.

Bai J, Wang Q, Wang T. Characterization of InGaN-based nanorod light emitting diodes with different indium compositions [J]. J. Appl. Phys., 2012, 111(11):113103-1-7.

Ju J W, Hyeob Baek J, Lee S J, et al. Fabrication and characterization of high efficiency green nanopillar LED [J]. J. Cryst. Growth, 2013, 370:332-335.

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