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HgTe/CdS/ZnS多壳层量子点的制备与表征
Synthesis and Characterization of HgTe/CdS/ZnS Multi-shell Quantum Dots
- 发光学报 2015年36卷第3期 页码：272-278
- 作者机构：
中山大学物理科学与工程技术学院,广东 广州,510275
- 作者简介：
- 基金信息：国家自然科学基金(11374376,11174374)();广东省教育厅科研项目(2012CXZD0001)资助()
DOI：10.3788/fgxb20153603.0272
中图分类号： O842.31纸质出版日期：2015-3-3，
网络出版日期：2015-1-12，
收稿日期：2014-11-1，
修回日期：2015-1-5，
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胡军, 秦瑞飞, 金崇君. HgTe/CdS/ZnS多壳层量子点的制备与表征[J]. 发光学报, 2015,36(3): 272-278
HU Jun, QIN Rui-fei, JIN Chong-jun. Synthesis and Characterization of HgTe/CdS/ZnS Multi-shell Quantum Dots[J]. Chinese Journal of Luminescence, 2015,36(3): 272-278
胡军, 秦瑞飞, 金崇君. HgTe/CdS/ZnS多壳层量子点的制备与表征[J]. 发光学报, 2015,36(3): 272-278 DOI： 10.3788/fgxb20153603.0272.
HU Jun, QIN Rui-fei, JIN Chong-jun. Synthesis and Characterization of HgTe/CdS/ZnS Multi-shell Quantum Dots[J]. Chinese Journal of Luminescence, 2015,36(3): 272-278 DOI： 10.3788/fgxb20153603.0272.
摘要
采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点。首先
以1-硫代甘油为稳定剂
在水相溶液中制备出HgTe核量子点;然后
采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层
合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点。该合成方法仅需3个步骤
具有操作简单、成本低廉的优点。实验结果显示
当反应温度为90 ℃、反应溶液pH为11.0、反应加热回流时间为4 min时
HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%。
Abstract
A simple method for HgTe/CdS/ZnS multi-shell quantum dots (QDs) synthesizing was developed. Firstly
HgTe core QDs were synthesized in aqueous solution with 1-thioglycerol as the stabilizer. Then
CdS and ZnS shells were grown on the surface of HgTe core by epitaxial growth method. The resultant HgTe/CdS/ZnS multi-shell QDs have stable near-infrared light-emitting property. This synthetic method contains only three steps with the advantages of simple operation and low cost. The experimental results indicate that HgTe/CdS/ZnS multi-shell QDs can reach the highest fluorescence quantum yield of 36% as the reaction solution (pH=11.0) is heated reflux for 4 min at 90 ℃.
关键词
HgTe/CdS/ZnS量子点外延生长荧光量子产率
Keywords
HgTe/CdS/ZnS quantum dotsepitaxial growthfluorescence quantum yield
references
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