低偏振高功率1 310 nm超辐射发光二极管的液相外延生长

周勇; 段利华; 张靖; 刘尚军; 韩伟峰; 黄茂

doi:10.3788/fgxb20153601.0069

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低偏振高功率1 310 nm超辐射发光二极管的液相外延生长

器件制备及器件物理 | 更新时间：2020-08-12

- 低偏振高功率1 310 nm超辐射发光二极管的液相外延生长
- 1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy
- 发光学报 2015年36卷第1期页码：69-74
- 作者机构：
  
  1. 重庆大学应用物理系重庆,400044
  2. 重庆光电技术研究所重庆,400060
- 作者简介：
- 基金信息：
  
  国家自然科学基金(11304405)资助项目()
- DOI：10.3788/fgxb20153601.0069
  中图分类号： TN248.4
- 纸质出版日期：2015-1-3，
  
  收稿日期：2014-9-22，
  
  修回日期：2014-11-5，
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周勇, 段利华, 张靖等. 低偏振高功率1 310 nm超辐射发光二极管的液相外延生长[J]. 发光学报, 2015,36(1): 69-74

ZHOU Yong, DUAN Li-hua, ZHANG Jing etc. 1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy[J]. Chinese Journal of Luminescence, 2015,36(1): 69-74
周勇, 段利华, 张靖等. 低偏振高功率1 310 nm超辐射发光二极管的液相外延生长[J]. 发光学报, 2015,36(1): 69-74 DOI： 10.3788/fgxb20153601.0069.

ZHOU Yong, DUAN Li-hua, ZHANG Jing etc. 1 310 nm Polarization-insensitive High Power Superluminescent Diodes Fabricated by Liquid Phase Epitaxy[J]. Chinese Journal of Luminescence, 2015,36(1): 69-74 DOI： 10.3788/fgxb20153601.0069.

摘要

对新月形超辐射发光二极管的液相外延生长过程进行了机理分析。利用Matlab软件对建立的非平面生长模型进行了理论计算

并利用扫描电镜(SEM)对液相外延生长的形貌进行了分析

通过理论计算与实验分析设计了获得低偏振、高功率超辐射发光二极管的外延结构。利用该结构研制的超辐射发光二极管芯片在100 mA工作电流、25 ℃工作温度下输出功率达到3.6 mW

相应的输出波长为1 306 nm

光谱半宽为39 nm

光谱波纹为0.17 dB

偏振度为2%。

Abstract

Theoretical analyses of growing processes were made in the case of superluminesecnt diode with crescent structure by liquid phase epitaxy (LPE)

which could perfectly explain some phenomena in experiments of LPE on curved InP surfaces. The results of numerical calculation were consistent with the experimental results. The epitaxy structure was optimized to enhance the output power and reduce the polarization of the SLD. As a result

polarization dependence as low as 2% and 3.6 mW output power were obtained at 100 mA and 25 ℃ heat-sink temperature

corresponding to 39 nm spectral width with spectral modulation of less than 0.17 dB.

关键词

超辐射发光二极管低偏振度高功率液相外延

Keywords

superluminescent diodepolarization insensitivehigh powerliquid phase epitaxy

references

elikel O, San S E. Design details and characterization of all digital closed-loop interferometric fiber optic gyroscope with superluminescent light emitting diode [J]. Opt. Rev., 2009, 16(1):35-43.

Feng X J, Wang X X, Li L J, et al. Influences of imperfect polarization induced effects to the quasi-reciprocal reflective optical voltage sensor [J]. J. Lightwave Technol., 2013, 31(16):2777-2784.

Heimann M, Liesegang M, Arndt-Staufenbiel N, et al. Optical system components for navigation grade fiber optic gyroscopes [J]. SPIE, 2013, 8899:88991A-1-9.

Andreeva E V, Il'ichenko S N, Kostin Y O, et al. Broadband superluminescent diodes with bell-shaped spectra emitting in the range from 800 to 900 nm [J]. Quant. Electron., 2013, 43(8):751-756.

Duan L H, Fang L, Zhang J, et al. Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1 053 nm [J]. Semicond. Sci. Technol., 2014, 29(5):055004-1-5.

Ozaki N, Yasuda T, Ohkouchi S, et al. Near-infrared superluminescent diode using stacked self-assembled InAs quantum dots with controlled emission wavelengths [J]. Jpn. J. Appl. Phys., 2014, 53(4S):04EG10-1-5.

Kredzinski L, Connelly M J. Anti-Stokes effect CCD camera and SLD based optical coherence tomography for full-field imaging in the 1 550 nm region [J]. SPIE, 2012, 8427:84274D-1-5.

Yoo Y C, Han I K, Lee J I. High power broadband superluminescent diodes with chirped multiple quantum dots [J]. Electron. Lett., 2007, 43(19):1045-1047.

Xin Y C, Martinez A, Saiz T, et al. 1.3-m quantum-dot multisection superluminescent diodes with extremely broad bandwidth [J]. IEEE Photon. Technol. Lett., 2007, 19(7):501-503.

Khan M Z M, Majid M A, Ng T K, et al. Simultaneous quantum dash-well emission in a chirped dash-in-well superluminescent diode with spectral bandwidth> 700 nm [J]. Opt. Lett., 2013, 38(19):3720-3723.

Nkanta J E, Maldonado-Basilio R, Khan K, et al. Low polarization-sensitive asymmetric multi-quantum well semiconductor amplifier for next-generation optical access networks [J]. Opt. Lett., 2013, 38(16):3165-3168.

Zhao H, Huang Y D, Zhang W, et al. Simulation of polarization-insensitive multiple-quantum-well superluminescent diodes [J]. Chin. Opt. Lett., 2006, 4(3):181-183.

Heo D, Lee J S, Yun I K, et al. Polarization-independent, high-power, and angle-flared superluminescent diode for WDM-PON applications[C]//Lasers and Electro-Optics Society, Sidney: IEEE, 2005:627-628.

Liu K, Song A M, Tian K, et al. Quantum well superluminescent diodes with high power and low polarization degree [J]. Semicond. Optoelectron.(半导体光电), 2013, 34(6):949-953 (in Chinese).

Yang J H, Gao X, Li Z H, et al. A study on high-quality high power InGaAsP/GaAs lasers grown by liquid phase epitaxy [J]. Acta Armamentarii (兵工学报), 2001, 22(2):214-217 (in Chinese).

Wang L, Li Z H, Xu L, et al. Al-free SQW high-power semiconductor lasers [J]. Semicond. Optoelectron.(半导体光电), 2002, 23(6):391-392 (in Chinese).

Li X, Chen G X, Jian S S. Theory and experiment of liquid phase epitaxy on curved InP surface [J]. Chin. J. Semicond.(半导体学报), 1995, 16(2):93-100 (in Chinese).

Vilmos R, Janos B, Sandor P, et al. Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes [J]. Mater. Sci. Eng., 2001, B80:18-22.

Duan L H, Fang L, Zhou Y, et al. Analysis on current leakage in DCPBH-SLD grown by LPE [J]. Semicond. Optoelectron.(半导体光电), 2012, 33(3):342-345 (in Chinese).

Wang Q Z, Zhang W F, Pang T. InGaAsP/InP buried crescent laser diode [J]. J. Univ. Electron. Sci. Technol. China (电子科技大学学报), 1989, 18(1):78-82 (in Chinese).

Mito I, Kitamura M, Kobayashi K, et al. InGaAsP double-channel-planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement [J]. J. Lightwave Technol., 1983, 1(1):195-202.

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