PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析

张旭; 张杰; 闫兆文; 周星宇; 张福甲

doi:10.3788/fgxb20143512.1459

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PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析

器件制备及器件物理 | 更新时间：2020-08-12

- PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析
- XPS Test Analysis of Ohmic Contact Layer of Photodetector
- 发光学报 2014年35卷第12期页码：1459-1463
- 作者机构：
  
  1. 兰州大学物理科学与技术学院,甘肃兰州,730000
  2. 兰州文理学院电子信息工程学院,甘肃兰州,730000
  3. 兰州大学应用有机国家重点实验室, 甘肃兰州 730000
- 作者简介：
- 基金信息：
  
  甘肃省教育厅科研项目(2013A-133)();甘肃省自然科学基金(145RJZA071)资助项目()
- DOI：10.3788/fgxb20143512.1459
  中图分类号： TN305.93
- 纸质出版日期：2014-12-3，
  
  收稿日期：2014-9-12，
  
  修回日期：2014-10-27，
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张旭, 张杰, 闫兆文等. PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析[J]. 发光学报, 2014,35(12): 1459-1463

ZHANG Xu, ZHANG Jie, YAN Zhao-wen etc. XPS Test Analysis of Ohmic Contact Layer of Photodetector[J]. Chinese Journal of Luminescence, 2014,35(12): 1459-1463
张旭, 张杰, 闫兆文等. PTCDA/P-Si光电探测器欧姆接触层的XPS测试分析[J]. 发光学报, 2014,35(12): 1459-1463 DOI： 10.3788/fgxb20143512.1459.

ZHANG Xu, ZHANG Jie, YAN Zhao-wen etc. XPS Test Analysis of Ohmic Contact Layer of Photodetector[J]. Chinese Journal of Luminescence, 2014,35(12): 1459-1463 DOI： 10.3788/fgxb20143512.1459.

摘要

在光电探测器PTCDA/P-Si芯片的有机层表面

成功制作出了比接触电阻为4.510

-5

的低阻欧姆接触层.利用X射线光电子能谱(XPS)对Al/Ni/ITO的欧姆接触层界面的电子状态进行了测试和分析.结果表明

ITO中的In

及Sn

各出现两个分裂能级的谱峰

它们是In和Sn原子处于氧化环境的结合能.Ni

有两个谱峰Ni

2p(1)

及Ni

2p(2)

低结合能位置Ni

2p(1)

对应于Ni原子被X射线激发产生的谱峰

说明Ni-ITO之间没有发生化学反应

Ni层阻止了Al层被氧化成Al

;高结合能Ni

2p(2)

谱峰说明已形成了Al

Ni冶金相

有利于低阻欧姆接触层的形成.

Abstract

Low Ohmic contact layers with the specific contact resistance of 4.510

-5

were fabricated on the organic layer surface of PTCDA/P-Si photodetector chip. The electronic states of the interface of Al/Ni/ITO structure Ohmic contact layer were investigated using X-ray photoelectron spectroscopy (XPS). In ITO

and Sn

arise two peaks of split level

respectively. They are the binding energy of In and Sn atom located in oxidizing environment. Ni

has two spectra peaks of Ni

2p(1)

and Ni

2p(2)

. The lower binding energy location is Ni

2p(1)

which is excited by X-ray. It indicates that no chemical reaction happens between Ni and ITO layer

and the formation of A1

has been prevented. As for Ni

2p(2)

peak

it indicates that Al

Ni alloy phase has formed

which is good for the formation of low resistance Ohmic contact layer.

关键词

有机光电探测器低阻欧姆接触层反应机理X射线光电子能谱

Keywords

organic photodetectorlow-resistance Ohmic contact layerreaction mechanismX-ray photoelectron spectroscopy

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