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1. 闽南师范大学 物理与信息工程学院, 福建 漳州 363000
2. 闽南师范大学 化学与环境学院,福建 漳州,363000
纸质出版日期:2014-12-3,
收稿日期:2014-8-15,
修回日期:2014-9-21,
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陈景东, 张婷, 方玉宏. 非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响[J]. 发光学报, 2014,35(12): 1427-1431
CHEN Jing-dong, ZHANG Ting, FANG Yu-hong. Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014,35(12): 1427-1431
陈景东, 张婷, 方玉宏. 非桥氧空穴发光中心对铁钝化多孔硅光致发光的影响[J]. 发光学报, 2014,35(12): 1427-1431 DOI: 10.3788/fgxb20143512.1427.
CHEN Jing-dong, ZHANG Ting, FANG Yu-hong. Effect of Non-bridging Oxygen Hole Luminescence Center on Photoluminescence of Iron-passivated Porous Silicon[J]. Chinese Journal of Luminescence, 2014,35(12): 1427-1431 DOI: 10.3788/fgxb20143512.1427.
采用水热腐蚀法制备了铁钝化多孔硅样品
样品光致发光谱的荧光峰位于2.0 eV附近
半峰宽约为0.40 eV.激发波长从240 nm增大到440 nm的过程中
荧光峰先红移再蓝移
最后基本稳定
变化曲线呈勺型.通过分析15片发光多孔硅样品的统计结果
发现荧光峰逆转所对应的激发波长位于330 nm附近
相应的激发光子能量约为3.8 eV.样品光致发光谱随激发波长的勺型变化过程与 SiO
和 SiO
HOSi 两类非桥氧空穴发光中心共同作用时的发光行为一致.
Hydrothermal etching method was employed to prepare iron-passivated porous silicon (IP-Si) samples with peak energy around 2.0 eV and FWHM of 0.40 eV. As the excitation wavelength increases from 240 to 440 nm
the peak energy of photoluminescence red-shifts first
and then blue-shifts before it reaches a constant energy. The changing curve demonstrates a spoon-like pattern. By analyzing the statistics results from 15 IP-Si samples
it is found that the turnover excitation wavelength corresponding to the peak energy is about 330 nm and the related photon energy is 3.8 eV. The spoon-like relationship found between the peak energy and excitation wavelength is in good agreement with the photoluminescence behavior under the combined action of two types of non-bridging oxygen hole center of SiO
and SiO
HOSi .
多孔硅铁钝化光致发光非桥氧空穴水热腐蚀
porous siliconiron passivatedphotoluminescencenon-bridging oxygen holehydrothermal etching
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