Mg含量对MgxZn1-xO:Ga薄膜电学性质的影响

李超群; 张振中; 谢修华; 陈洪宇; 申德振

doi:10.3788/fgxb20143512.1405

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Mg含量对Mg_xZn_1-xO:Ga薄膜电学性质的影响

材料合成及性能 | 更新时间：2020-08-12

- Mg含量对Mg_xZn_1-xO:Ga薄膜电学性质的影响
- Influence of Mg Content on The Electrical Property of Mg_xZn_1-xO:Ga Films
- 发光学报 2014年35卷第12期页码：1405-1409
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
  2. 中国科学院大学, 北京 100049
- 作者简介：
- 基金信息：
  
  国家自然科学基金(11134009,21100146,61376054)();国家"();973计划"();(2011CB302006)资助项目()
- DOI：10.3788/fgxb20143512.1405
  中图分类号： O484.4
- 纸质出版日期：2014-12-3，
  
  网络出版日期：2014-9-26，
  
  收稿日期：2014-5-7，
  
  修回日期：2014-6-15，
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李超群, 张振中, 谢修华等. Mg含量对MgxZn1-xO:Ga薄膜电学性质的影响[J]. 发光学报, 2014,35(12): 1405-1409

LI Chao-qun, ZHANG Zhen-zhong, XIE Xiu-hua etc. Influence of Mg Content on The Electrical Property of MgxZn1-xO:Ga Films[J]. Chinese Journal of Luminescence, 2014,35(12): 1405-1409
李超群, 张振中, 谢修华等. Mg含量对MgxZn1-xO:Ga薄膜电学性质的影响[J]. 发光学报, 2014,35(12): 1405-1409 DOI： 10.3788/fgxb20143512.1405.

LI Chao-qun, ZHANG Zhen-zhong, XIE Xiu-hua etc. Influence of Mg Content on The Electrical Property of MgxZn1-xO:Ga Films[J]. Chinese Journal of Luminescence, 2014,35(12): 1405-1409 DOI： 10.3788/fgxb20143512.1405.

摘要

通过金属有机物化学气相沉积法制备了不同Mg组分的Mg

O:Ga(

0.03

0.14)薄膜.透射谱中Mg

O:Ga薄膜的光学带隙随

增大而出现的蓝移证实了Mg在ZnO晶格中的替位掺入.薄膜上金叉指电极间的变温

I-V

曲线显示

在同等温度下

Ga掺杂Mg

O薄膜的电阻率随着

值的增大而逐渐升高.这是由于Mg组分增大使材料的导带底显著上升

Ga的施主能级深度增大

导致n型载流子浓度降低.根据

I-V

曲线计算了270 K温度下Mg

O:Ga薄膜的浅能级施主深度.与

0.03

0.14对应的施主能级深度分别为45.3

58.5

65 meV

说明随着薄膜Mg含量的升高

Ga的施主能级深度有增加的趋势.

Abstract

O:Ga (

0.03

0.14) films were prepared by metal organic chemical vapor deposition method. The transmission spectra of Mg

O:Ga films were measured. The optical band gap shows blue shifting on the transmission spectra with the increase of letter

. 12 pairs of interdigital electrodes were prepared on all Mg

O:Ga films.

I-V

curves of Mg

O:Ga films were measured at different temperature

and the temperature resistance curves of Mg

O:Ga films were obtained under certain voltage. The normalized

R-T

curve shows that the resistance of Mg

O:Ga films increases with the increasing of

at the same temperature. It is attributed to that the width of bandgap expands with the concentration of Mg ions

which leads to reduction of carrier concentration. The ionization energy for shallow donor impurities in the Mg

O:Ga lattice was calculated. When the mole fraction of Mg is 0

3% and 14%

the ionization energy for shallow impurity is 45.3

58.5 and 65 meV

respectively. The data show that the ionization energy for Ga donor obviously increases with the increasing of Mg concentration .

关键词

MgZnOGa掺杂能级深度电阻

Keywords

MgZnOGa dopedionization energyresistivity

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