电极材料对IGZO薄膜晶体管性能的影响

刘冲; 韦敏; 杨帆; 贾卓; 邓宏

doi:10.3788/fgxb20143511.1365

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电极材料对IGZO薄膜晶体管性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 电极材料对IGZO薄膜晶体管性能的影响
- Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor
- 发光学报 2014年35卷第11期页码：1365-1369
- 作者机构：
  
  电子科技大学电子薄膜与集成器件国家重点实验室,四川成都,610054
- 作者简介：
- 基金信息：
  
  中央高校基金(ZYGX2013J041)();电子薄膜与集成器件国家重点实验室基金(KFJJ201303)资助项目()
- DOI：10.3788/fgxb20143511.1365
  中图分类号： TN321+.5
- 纸质出版日期：2014-11-3，
  
  收稿日期：2014-6-16，
  
  修回日期：2014-9-26，
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刘冲, 韦敏, 杨帆等. 电极材料对IGZO薄膜晶体管性能的影响[J]. 发光学报, 2014,35(11): 1365-1369

LIU Chong, WEI Min, YANG Fan etc. Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014,35(11): 1365-1369
刘冲, 韦敏, 杨帆等. 电极材料对IGZO薄膜晶体管性能的影响[J]. 发光学报, 2014,35(11): 1365-1369 DOI： 10.3788/fgxb20143511.1365.

LIU Chong, WEI Min, YANG Fan etc. Effects of Electrode Materials on The Performances of IGZO-based Thin Film Transistor[J]. Chinese Journal of Luminescence, 2014,35(11): 1365-1369 DOI： 10.3788/fgxb20143511.1365.

摘要

采用射频磁控溅射方法在n型硅片上制备了底栅顶结构的铟镓锌氧-薄膜晶体管(IGZO-TFT)。分别采用Au、Cu、Al 3种金属材料作为电极

研究不同电极材料对IGZO薄膜晶体管性能的影响。器件的输出特性和转移特性测试结果表明:以Au为电极的IGZO-TFT具有最佳的性能

其饱和输出电流达到17.9 A

开关比达到1.410

。基于功函数比较分析了3种电极的接触特性

根据TLM(Transmission line model)理论推算得出Au电极具有三者中最小的接触电阻。

Abstract

Indium gallium zinc oxide thin film transistors (IGZO-TFTs) with bottom-gate top structure were fabricated on n-type silicon substrates using radio frequency (RF) magnetron sputtering method. Three kinds of metal material such as Au

and Al were used to fabricate electrode

respectively

and the effects of different electrode materials on IGZO TFT performance were investigated. The output characteristic and transfer characteristic of the TFT devices were tested. The best performance was obtained when Au was used to fabricate electrode

its saturation output current was 17.9 A

and on-off current ratio was up to 1.410

. In addition

the contact characteristics between three kinds of electrodes and IGZO thin film were analyzed based on their work function. Au electrode had the smallest contact resistance of these three metal according to the TLM(transmission line model) theory.

关键词

IGZO接触电阻TLM理论功函数

Keywords

IGZOcontact resistanceTLM theorywork function

references

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Wu W J, Yan J, Xu Z P, et al. Property comparison between IGZO TFT and ZnO TFT [J]. Chin. J. Liq. Cryst. Disp.(液晶与显示), 2011, 26(2):147-153 (in Chinese).

Ahn B D, Shin H S, Kim H J, et al. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors [J]. Appl. Phys. Lett., 2008, 93(20):203506-1-3.

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Shimura Y, Nomura K, Hosono H, et al. Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes [J]. Thin Solid Films, 2008, 516(11):5899-5902.

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