基于立方相MgZnO薄膜的高响应度深紫外探测器

郑剑; 乔倩; 张振中; 王立昆; 韩舜; 张吉英; 刘益春; 王双鹏; 陈星; 姜明明; 李炳辉; 赵东旭; 刘雷; 刘可为; 单崇新; 申德振

doi:10.3788/fgxb20143511.1291

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基于立方相MgZnO薄膜的高响应度深紫外探测器

材料合成及性能 | 更新时间：2020-08-12

- 基于立方相MgZnO薄膜的高响应度深紫外探测器
- Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity
- 发光学报 2014年35卷第11期页码：1291-1296
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 浙江海洋学院船舶与海洋工程学院,浙江舟山,316022
  3. 东北师范大学先进光电功能材料研究中心,吉林长春,130024
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划(2011CB302006,2011CB302002)();国家自然科学基金(11134009,61376054,11174273,111042
- DOI：10.3788/fgxb20143511.1291
  中图分类号： O484.4
- 纸质出版日期：2014-11-3，
  
  网络出版日期：2014-8-8，
  
  收稿日期：2014-4-20，
  
  修回日期：2014-5-30，
扫描看全文
郑剑, 乔倩, 张振中等. 基于立方相MgZnO薄膜的高响应度深紫外探测器[J]. 发光学报, 2014,35(11): 1291-1296

ZHENG Jian, QIAO Qian, ZHANG Zhen-zhong etc. Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity[J]. Chinese Journal of Luminescence, 2014,35(11): 1291-1296
郑剑, 乔倩, 张振中等. 基于立方相MgZnO薄膜的高响应度深紫外探测器[J]. 发光学报, 2014,35(11): 1291-1296 DOI： 10.3788/fgxb20143511.1291.

ZHENG Jian, QIAO Qian, ZHANG Zhen-zhong etc. Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity[J]. Chinese Journal of Luminescence, 2014,35(11): 1291-1296 DOI： 10.3788/fgxb20143511.1291.

摘要

在超过相变临界厚度的立方相Mg

0.29

0.71

O薄膜上制备了Au插指电极MSM结构探测器件

30 V偏压下的峰值响应度可达27.9 A/W(268 nm)

对应的外量子效率为12900%。分析认为原位生长在立方相MgZnO薄膜上的极薄的结构相变层引入了高密度的界面态

在立方相薄膜表面电极接触中起到了降低势垒、减小耗尽层宽度、增强电极注入电子的能力的作用

使得器件形成高的光导增益。

Abstract

An MSM solar-blind UV photodetector was fabricated on Mg

0.29

0.71

O thin film

which showed a large responsivity of 27.9 A/W at 30 V bias (268 nm). The ultra thin phase-transition layer leads to the improvement of the metal-semiconductor contact and more internal gain. The results provide a new choice to realize high performance MgZnO-based solar-blind UV detectors.

关键词

立方MgZnO深紫外探测器光导增益

Keywords

cubic MgZnOdeep-ultraviolet photodetectorphotoconductive gain

references

Yang W, Hullavarad S S, Nagaraj B, et al. Compositionally-tuned epitaxial cubic MgxZn1-xO on Si (100) for deep ultraviolet photodetectors [J]. Appl. Phys. Lett., 2003, 82(20):3424-3426.

Ju Z G, Shan C X, Jiang D Y, et al. MgxZn1-xO -based photodetectors covering the whole solar-blind spectrum range [J]. Appl. Phys. Lett., 2008, 93(17):173505-1-3.

Du X L, Mei Z X, Liu Z L, et al. Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors [J]. Adv. Mater., 2009, 21(45):4625-4630.

Zheng Q H, Huang F, Ding K, et al. MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates [J]. Appl. Phys. Lett., 2011, 98(22):221112-1-3.

Yang W, Vispute R D, Choopun S, et al. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films [J]. Appl. Phys. Lett., 2001, 78(18):2787-2789.

Liu Y, Gorla C R, Liang S, et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD [J]. J. Electron. Mater., 2000, 29(1):69-74.

Wang L K, Ju Z G, Zhang J Y, et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [J]. Appl. Phys. Lett., 2009, 95(13):131113-1-3.

Kunisu M, Tanaka I, Yamamoto T, et al. The formation of a rock-salt type ZnO thin film by low-level alloying with MgO [J]. J. Phys.: Condensed Matter, 2004, 16(21):3801-3806.

Garrido J A, Monroy E, Izpura I, et al. Photoconductive gain modelling of GaN photodetectors [J]. Semicond. Sci. Technol., 1998, 13(6):563-568.

Liu K W, Sakurai M, Aono M. ZnO-based ultraviolet photodetectors [J]. Sensors, 2010, 10(9):8604-8634.

Liu E K. Semiconductor Physics [M]. Beijing: Natinal Defence Industry Press, 1997:186 (in Chinese).

Brillson L J, Lu Y. ZnO Schottky barriers and Ohmic contacts [J]. J. Appl. Phys., 2011, 109(12):121301-1-34.

Tabares G, Hierro A, Ulloa J M, et al. High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes [J]. Appl. Phys. Lett., 2010, 96(10):101112-1-3.

Hou Y N, Mei Z X, Liu Z L, et al. Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain [J]. Appl. Phys. Lett., 2011, 98(10):103506-1-3.

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