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1. 北京工业大学 光电子技术省部共建教育部重点实验室, 北京 100124
2. 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件与应用重点实验室, 江苏 苏州 215123
纸质出版日期:2013-3-10,
收稿日期:2012-12-6,
修回日期:2012-12-20,
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邓旭光, 韩军, 邢艳辉, 汪加兴, 范亚明, 张宝顺, 陈翔. 高阻GaN的MOCVD外延生长[J]. 发光学报, 2013,34(3): 351-355
DENG Xu-guang, HAN Jun, XING Yan-hui, WANG Jia-xing, FAN Ya-ming, ZHANG Bao-shun, CHEN Xiang. Growth of Highly Resistive GaN by MOCVD[J]. Chinese Journal of Luminescence, 2013,34(3): 351-355
邓旭光, 韩军, 邢艳辉, 汪加兴, 范亚明, 张宝顺, 陈翔. 高阻GaN的MOCVD外延生长[J]. 发光学报, 2013,34(3): 351-355 DOI: 10.3788/fgxb20133403.0351.
DENG Xu-guang, HAN Jun, XING Yan-hui, WANG Jia-xing, FAN Ya-ming, ZHANG Bao-shun, CHEN Xiang. Growth of Highly Resistive GaN by MOCVD[J]. Chinese Journal of Luminescence, 2013,34(3): 351-355 DOI: 10.3788/fgxb20133403.0351.
利用金属有机化合物气相沉积(MOCVD)在蓝宝石衬底上生长了高阻GaN薄膜。对GaN成核层生长的反应室压力、生长时间和载气类型对GaN缓冲层电学特性的影响进行了分析。实验结果表明
延长GaN成核层的生长时间
降低成核层生长时的反应室压力
载气由H
2
换为N
2
都会得到高阻的GaN缓冲层。样品的方块电阻
R
s
最高为2.4910
11
/□。以高阻GaN样品为衬底制备了AlGaN/AlN/GaN结构HEMT器件
迁移率最高达1 230 cm
2
/(Vs)。
High resistance GaN thin film was grown on sapphire (0001) substrates using metal-organic chemical vapor deposition (MOCVD). Effect of the GaN nucleation layer growth parameters
including reactor pressure
species of carrier gas and growth time
on the electrical characteristics of the following grown GaN buffer was investigated. It is found that GaN films epitaxially grown on the GaN nucleation layers deposited at a relatively lower pressure tend to have a high resistance.High resistance GaN buffer layer can also be prepared by extending growth time of the nucleation layer (
i.e.
increasing the thickness of nucleation layer) or by using N
2
instead of H
2
as carrier gas during the growth of nucleation layer. GaN layers with a sheet resistance as high as 2.4910
11
/□ was obtained. These layers were used as templates for the preparation of epi-wafers with AlGaN/AlN/GaN hetero structures
which were used to fabricate high electron mobility transistors (HEMTs). The highest mobility of these samples reaches to 1 230 cm
2
/(Vs).
氮化镓高电子迁移率晶体管蓝宝石衬底金属有机化合物气相沉积
GaNhigh electron mobility transistorsapphire substrateMOCVD
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