新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高

丁彬彬; 赵芳; 宋晶晶; 熊建勇; 郑树文; 喻晓鹏; 许毅钦; 周德涛; 张涛; 范广涵

doi:10.3788/fgxb20133403.0345

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新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高

器件制备及器件物理 | 更新时间：2020-08-12

- 新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高
- Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer
- 发光学报 2013年34卷第3期页码：345-350
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176043)();广东省战略性新兴产业专项资金(2010A081002005,2011A081301003,2012A080304016)();
- DOI：10.3788/fgxb20133403.0345
  中图分类号： TM23;O242.1
- 纸质出版日期：2013-3-10，
  
  收稿日期：2012-12-21，
  
  修回日期：2013-1-24，
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丁彬彬, 赵芳, 宋晶晶, 熊建勇, 郑树文, 喻晓鹏, 许毅钦, 周德涛, 张涛, 范广涵. 新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高[J]. 发光学报, 2013,34(3): 345-350

DING Bin-bin, ZHAO Fang, SONG Jing-jing, XIONG Jian-yong, ZHENG Shu-wen, YU Xiao-peng, XU Yi-qin, ZHOU De-tao, ZHANG Tao, FAN Guang-han. Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(3): 345-350
丁彬彬, 赵芳, 宋晶晶, 熊建勇, 郑树文, 喻晓鹏, 许毅钦, 周德涛, 张涛, 范广涵. 新型电子阻挡层结构对蓝光InGaN发光二极管性能的提高[J]. 发光学报, 2013,34(3): 345-350 DOI： 10.3788/fgxb20133403.0345.

DING Bin-bin, ZHAO Fang, SONG Jing-jing, XIONG Jian-yong, ZHENG Shu-wen, YU Xiao-peng, XU Yi-qin, ZHOU De-tao, ZHANG Tao, FAN Guang-han. Performance Improvement of Blue InGaN Light-emitting Diode with A Special Designed Electron-blocking Layer[J]. Chinese Journal of Luminescence, 2013,34(3): 345-350 DOI： 10.3788/fgxb20133403.0345.

摘要

分别对3种不种电子阻挡层的蓝光AlGaN LED进行数值模拟研究。3种阻挡层结构分别为传统AlGaN电子阻挡层

AlGaN-GaN-AlGaN电子阻挡层和Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层。此外对这对三种器件的活性区的载流子浓度、能带图、静电场和内量子效率进行比较和分析。研究结果表明

相较于传统AlGaN和AlGaN-GaN-AlGaN两种电子阻挡层的LED

具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED具有较高的空穴注入效率、较低的电子外溢现象和较小的静电场(活性区)。同时

具有Al组分渐变的AlGaN-GaN-AlGaN电子阻挡层结构的LED的efficiency droop现象也得到一定的缓解。

Abstract

Three kinds of electron-blocking layer (EBL) AlGaN based LED were compared numerically. They are conventional AlGaN EBL

AlGaN-GaN-AlGaN (AGA) and gradual Al composition AlGaN-GaN-AlGaN (GAGA) EBL. Their porfermance were analyzed involved carrier concentration in the active region

energy band diagram

electrostatic field and internal quantum efficiency (IQE). The results indicate that the LED with an GAGA EBL exhibits a better hole injection efficiency

a more peaceable efficiency droop

a lower electron leakage

and a smaller electrostatic field than the LED with a conventional AlGaN EBL or with an AGA EBL.

关键词

发光二极管(LED)电子阻挡层(EBL)数值模拟效率下降

Keywords

light-emitting diodeelectron-blocking layernumerical simulationefficiency droop

references

Muramoto Y, Kimura M, Dempo A, et al. High-efficiency UV LEDs and RGB white LEDs for lighting and LCD backlights [J]. J. Soc. Inf. Disp., 2011, 19(12):907-912.[2] Pimputkar S, Speck J, DenBaars S P, et al. Prospects for LED lighting [J]. Nat. Photonics, 2009, 3(4):180-182.[3] Horiuchi N. Light-emitting diodes: Natural white light [J]. Nat. Photonics, 2010, 4(11):738.[4] Mukai T, Yamada M, Nakamura S. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes [J]. Jpn. J. Appl. Phys., Part 1, 1999, 38:3976-3981.[5] Sun W, Shatalov M, Deng J, et al. Efficiency droop in 245-247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power [J]. Appl. Phys. Lett., 2010, 96(6):061102-1-3.[6] Kim M H, Schubert M F, Dai Q, et al. Origin of efficiency droop in GaN-based light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(18):183507-1-3.[7] Schubert M F, Chhajed S, Kim J K, et al. Effect of dislocation density on efficiency droop in GaInN/GaN light-emitting diodes [J]. Appl. Phys. Lett., 2007, 91(23):231114-1-3.[8] Rozhansky I V, Zakheim D A. Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping [J]. Phys. Status Solidi C, 2006, 3(6):2160-2164.[9] Delaney K T, Rinke P and Van de Walle C G. Auger recombination rates in nitrides from first principles [J]. Appl. Phys. Lett., 2009, 94(19):191109-1-3.[10] Shen Y C, Mueller G O, Watanabe S, et al. Auger recombination in InGaN measured by photoluminescence [J]. Appl. Phys. Lett., 2007, 91(14):141101-1-3.[11] Rozhansky I V, Zakheim D A. Analysis of the causes of the decrease in the electroluminescence efficiency of AlGaInN light-emitting-diode heterostructures at high pumping density [J]. Semiconductors, 2006, 40(7):839-845.[12] Ghazai A J, Thahab S M, Hassan H A, et al. Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer [J]. Opt. Exp., 2011, 19(10):9245-9254.[13] Kuo Y K, Chang J Y, Tsai M C, et al. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers [J]. Appl. Phys. Lett., 2009, 95(1):011116-1-3.[14] Fu Y K, Jiang R H, Lu Y H, et al. The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy [J]. Appl. Phys. Lett., 2011, 98(12):121115-1-3.[15] Song J J, Zhang Y Y, Zhao F, et al. Effect of the number of quantum wells on InGaN/AlGaN LED [J]. Chin. J. Lumin. (发光学报),2012, 33(12):1368 - 1372 (in Chinese).[16] Zhao H, Liu G, Zhang J, et al. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells [J]. Opt. Exp., 2011, 19(4):A991- 1007.[17] Liao C T, Tsai M C, Liou B T, et al. Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well [J]. J. Appl. Phys., 2010, 108(6):063107-1-6.[18] Zhao H and Tansu N. Optical gain characteristics of staggered InGaN quantum wells lasers [J]. J. Appl. Phys., 2010, 107(11):113110-1-3.[19] Zhang Y Y, Yin Y A. Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer [J]. Appl. Phys. Lett., 2011 99(22):221103-1-3.[20] Kuo Y K, Chang J Y, Tsai M C. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer [J]. Opt. Lett., 2010, 35(19):3285-3287.[21] Xia C S, Z. M. Simon Li, Lu W, et al. Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer [J]. J. Appl. Phys., 2012, 111(9):094503-1-3.[22] Zhao F, Zhang Y Y, Song J J, et al. High internal quantum efficiency blue light emitting diodes with triangular shaped InGaN/ GaN multiple quantum Wells [J]. Chin. J. Lumin. (发光学报),2013, 34(1): 66 - 72 (in English).[23] Chichibu S F, Abare A C, Minsky M S, et al. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J]. Appl. Phys. Lett., 1998, 73(14):2006-1-3. [24] Kuokstis E, Yang J W, Simin G, et al. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells [J]. Appl. Phys. Lett., 2002, 80(6):977-1-3.[25] Wang C H, Ke C C, Lee C Y, et al. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer [J]. Appl. Phys. Lett., 2010, 97(26):261103-1-3.

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