衬底弯曲度对GaN基LED芯片性能的影响

杨德超; 梁红伟; 邱宇; 宋世巍; 申人升; 柳阳; 夏晓川; 俞振南; 杜国同

doi:10.3788/fgxb20133403.0340

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衬底弯曲度对GaN基LED芯片性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 衬底弯曲度对GaN基LED芯片性能的影响
- The Influence of Substrate Bow on The Properties of GaN-based Light Emitting Diode Chips
- 发光学报 2013年34卷第3期页码：340-344
- 作者机构：
  
  1. 大连理工大学物理与光电工程学院,辽宁大连,116024
  2. 吉林大学电子科学与工程学院, 吉林长春 130023
  3. 浙江水晶光电科技股份有限公司, 浙江台州 318015
  4. 信息功能材料国家重点实验室中国科学院上海微系统与信息技术研究所, 上海 200050
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60976010,61076045,11004020)();国家"();863"();高科技研究发展项目(2011AA03A102)(
- DOI：10.3788/fgxb20133403.0340
  中图分类号： O781
- 纸质出版日期：2013-3-10，
  
  收稿日期：2012-11-27，
  
  修回日期：2013-1-4，
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杨德超, 梁红伟, 邱宇, 宋世巍, 申人升, 柳阳, 夏晓川, 俞振南, 杜国同. 衬底弯曲度对GaN基LED芯片性能的影响[J]. 发光学报, 2013,34(3): 340-344

YANG De-chao, LIANG Hong-wei, QIU Yu, SONG Shi-wei, SHEN Ren-sheng, LIU Yang, XIA Xiao-chuan, YU Zhen-nan, DU Guo-tong. The Influence of Substrate Bow on The Properties of GaN-based Light Emitting Diode Chips[J]. Chinese Journal of Luminescence, 2013,34(3): 340-344
杨德超, 梁红伟, 邱宇, 宋世巍, 申人升, 柳阳, 夏晓川, 俞振南, 杜国同. 衬底弯曲度对GaN基LED芯片性能的影响[J]. 发光学报, 2013,34(3): 340-344 DOI： 10.3788/fgxb20133403.0340.

YANG De-chao, LIANG Hong-wei, QIU Yu, SONG Shi-wei, SHEN Ren-sheng, LIU Yang, XIA Xiao-chuan, YU Zhen-nan, DU Guo-tong. The Influence of Substrate Bow on The Properties of GaN-based Light Emitting Diode Chips[J]. Chinese Journal of Luminescence, 2013,34(3): 340-344 DOI： 10.3788/fgxb20133403.0340.

摘要

利用低压MOCVD系统在弯曲度值不同的蓝宝石衬底上生长了GaN基LED外延结构并制作芯片。测量了芯片的主要电学和光学参数

并分析了衬底弯曲度值对芯片性能的影响。分析结果表明:存在弯曲度的衬底预先弛豫了外延层中的部分应力

改善了外延层的质量

从而提高了LED芯片的性能。随着衬底弯曲度值的逐渐增加

下层GaN对有源层中InGaN材料的压应力作用不断减小

导致芯片的主波长逐渐发生蓝移。

Abstract

GaN-based light emitting diodes (LEDs) were grown on the sapphire substrates with different bow values by low pressure metal organic chemical vapor deposition (MOCVD). LED chips were fabricated and the optic and electronic parameters were characterized. The influence of different bow values on the performances of LED was investigated. The analysis results show that the substrates with bow could relax part of the stress in the epilayer beforehand

which improved the quality of epilayer. Hence

the performances of the LED chips got better. During the growth of LEDs

the InGaN material in the active layer suffered the compressive stress that resulted from the underneath GaN layer. With the increase of bow values

the compressive stress that acted on the InGaN material decreased

which leads to the blue shift of the dominant wavelength.

关键词

GaNLED弯曲度残余应力

Keywords

GaNLEDbowresidue strain

references

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