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1. 中国科学院大学, 北京 100049
2. 发光学及应用国家重点实验室 中国科学院长春光学精密机械与物理研究所, 吉林 长春 130033
纸质出版日期:2013-3-10,
收稿日期:2012-11-26,
修回日期:2013-1-9,
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张志军, 刘云, 缪国庆, 王立军. 2 kW半导体激光加工光源[J]. 发光学报, 2013,34(3): 334-339
ZHANG Zhi-jun, LIU Yun, MIAO Guo-qing, WANG Li-jun. The 2 kW Semiconductor Laser Processing Light[J]. Chinese Journal of Luminescence, 2013,34(3): 334-339
张志军, 刘云, 缪国庆, 王立军. 2 kW半导体激光加工光源[J]. 发光学报, 2013,34(3): 334-339 DOI: 10.3788/fgxb20133403.0334.
ZHANG Zhi-jun, LIU Yun, MIAO Guo-qing, WANG Li-jun. The 2 kW Semiconductor Laser Processing Light[J]. Chinese Journal of Luminescence, 2013,34(3): 334-339 DOI: 10.3788/fgxb20133403.0334.
针对激光加工在金属材料焊接、熔覆、表面硬化等工业领域的应用
考虑到半导体激光器体积和重量小、效率高、免维护、成本低以及波长较短等特点
设计了功率达2 kW的半导体激光加工光源。在大通道工业水冷条件下
采用48只出射波长分别为808
880
938
976 nm的传导冷却半导体激光阵列作为发光单元
最终研制出了2 218 W高亮度光纤耦合模块。此高亮度模块可以实现柔性加工
直接应用于金属材料焊接、熔覆、表面合金化等工业领域
对于半导体激光器在工业领域的应用具有重要意义。
The laser processing is widely used in the welding of metallic materials
cladding
surface hardening
and other industrial fields. The semiconductor laser has many advantages
such as small volume and weight
high efficiency
maintenance-free
low cost
short wavelength
and so on. In this paper
a 2 218 W high-brightness fiber-coupled module was designed and overall assembled by using 48 conduction cooled diode laser arrays as light-emitting units under a major thoroughfare of industrial water-cooling condition. The emitting wavelength of the diode laser arrays were 808
880
938
976 nm
respectively. The high brightness module can make the flexible manufacturing directly applied in the industrial.
半导体激光阵列光纤耦合高亮度合束技术
diode barsfiber couplinghigh brightnessbeam combiner technology
Wang L J, Peng H Y, Gu Y Y, et al. Applications of laser diode in processing [J]. Infrared and Laser Engineering(红外与激光工程), 2006, 35(10):310-313 (in Chinese).[2] Vidal E, Quintana I, Azkorbebeitia U, et al. Fiber coupling of high-power diode laser stack for direct polycarbonate processing [J]. SPIE, 2010, 7583:75830G1-1-12.[3] Bachmann F, Loosen P, Poprawe R. High Power Diode Lasers and Their Applications [M]. New York: Springer Series in Optical Sciences, 2007:121.[4] Chen H, Wang X B. Evaluation and measurement of beam quality of high power manufacturing laser [J]. Opt. Precision Eng.(光学精密工程), 2011, 19(2):297-303 (in Chinese).[5] Shan X N, Liu Y, Cao J S. 808 nm kW-output high-efficiency diode laser sources [J]. Opt. Precision Eng.(光学精密工程), 2011, 19(2):452-456 (in Chinese).[6] Timmermann A, Bartoschewski D, Schluter S, et al. Intensity increasing up to 4 MW/cm2 with BALB's via wavelengths coupling [J]. SPIE, 2009, 7198:71980X-1-10.[7] Havrilla D, Brockmann R, Strohmaier S, et al. Dramatic advances in direct diode lasers [J]. SPIE, 2000, 7583: 75830B-1-6.[8] Matthias H, Bernd K, Jens B, et al. Novel high-brightness fiber coupled diode laser device [J]. SPIE, 2007, 6456: 64560T-1-5.[9] Cao Y H, Liu Y Q, Qin W B, et al. Research on kW-output high beam quality direct semicoducetor laser [J]. Chin. J. Lasers(中国激光), 2009, 36(9):2282-2285 (in Chinese).[10] Wang X P, Liang X M, Li Z J, et al. 880 nm semiconductor laser diode arrays and fiber coupling module [J]. Opt. Precision Eng.(光学精密工程), 2010, 18(5):1021-1027 (in Chinese).[11] ISO/DIS-Standard 11 146, International Organization for Standardization.[12] Wang Z J, Gheen A Z, Wang Y, et al. Optical coupling system for a high-power diode-pumped solid state laser. US: 6377410B1 .2002-04-23.[13] Zhang Z J, Liu Y, Wang L J, et al. Analysis the overall thermal resistance of laser diode beam combined modules [J]. Chin. J. Lasers(中国激光), 2012, 39(4):0402010-1-5 (in Chinese).
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