JIAO Yang, ZHANG Xin-an, ZHAI Jun-xia, YU Xian-kun, DING Ling-hong, ZHANG Wei-feng. Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In<sub>2</sub>O<sub>3</sub> Thin-film Transistors[J]. Chinese Journal of Luminescence, 2013,34(3): 324-328
JIAO Yang, ZHANG Xin-an, ZHAI Jun-xia, YU Xian-kun, DING Ling-hong, ZHANG Wei-feng. Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In<sub>2</sub>O<sub>3</sub> Thin-film Transistors[J]. Chinese Journal of Luminescence, 2013,34(3): 324-328 DOI: 10.3788/fgxb20133403.0324.
沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响
摘要
在室温下采用直流磁控溅射以SiO
2
/Si为衬底制备了不同沟道层厚度的底栅式In
2
O
3
薄膜晶体管
讨论了沟道层厚度对底栅In
2
O
3
薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关
最优沟道层厚度的In
2
O
3
薄膜晶体管为增强型
其阈值电压为2.5 V
开关电流比约为10
6
场效应迁移率为6.2 cm
2
V
-1
s
-1
。
Abstract
In
2
O
3
thin-film transistors (TFTs) with different channel thicknesses were fabricated on SiO
2
/Si substrates by DC magnetron sputtering at room temperature. The effects of the channel thickness on the electrical properties of In
2
O
3
TFTs with bottom-gate configuration were investigated. The performance of devices was found to be thickness dependent. The In
2
O
3
TFT with the optimized channel thickness exhibites enhancement mode characteristics
the threshold voltage is 2.5 V
the current on-off ratio is 10
6
and the field-effect mobility is 6.2 cm
2
V
-1
s
-1
.
关键词
In2O3薄膜薄膜晶体管沟道层厚度电学特性
Keywords
In2O3 filmsthin film transistorchannel thicknesselectrical performance
references
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