氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响

王云华; 周路; 乔忠良; 高欣; 薄报学

doi:10.3788/fgxb20133403.0308

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氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响
- Effects of Ar and H₂ Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates
- 发光学报 2013年34卷第3期页码：308-313
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61177019,61176048)资助项目()
- DOI：10.3788/fgxb20133403.0308
  中图分类号： O472.1
- 纸质出版日期：2013-3-10，
  
  收稿日期：2012-11-27，
  
  修回日期：2013-1-12，
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王云华, 周路, 乔忠良, 高欣, 薄报学. 氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响[J]. 发光学报, 2013,34(3): 308-313

WANG Yun-hua, ZHOU Lu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Effects of Ar and H<sub>2</sub> Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates[J]. Chinese Journal of Luminescence, 2013,34(3): 308-313
王云华, 周路, 乔忠良, 高欣, 薄报学. 氩、氢混合等离子体处理对GaAs表面性质及发光特性的影响[J]. 发光学报, 2013,34(3): 308-313 DOI： 10.3788/fgxb20133403.0308.

WANG Yun-hua, ZHOU Lu, QIAO Zhong-liang, GAO Xin, BO Bao-xue. Effects of Ar and H<sub>2</sub> Plasma Treatment on The Surface Character and Luminescence Properties of GaAs Substrates[J]. Chinese Journal of Luminescence, 2013,34(3): 308-313 DOI： 10.3788/fgxb20133403.0308.

摘要

介绍了一种氩、氢混合等离子体清洗GaAs基片的实验工艺

深入研究了氩、氢等离子体清洗GaAs表面污染物和氧化层

并活化表面性能的基本原理

同时讨论了气体流量、溅射功率和清洗时间等不同溅射参数对等离子体清洗效果的影响。结果表明

在氩气和氢气流量分别为10 cm

/min和30 cm

/min

溅射功率为20 W

清洗时间为15 min的条件下

GaAs样品的光致发光强度提高达139.12%

样品表面的AsO键和GaO键基本消失。

Abstract

A new plasma cleaning process for GaAs surface using Ar/H

plasma was introduced in this paper. The process for Ar/H

plasma cleaning and surface activation was studied comprehensively to remove various contaminants

oxide layer on GaAs surface

and the influence of Ar/H

plasma under different plasma parameters was discussed in detail. The results show that GaAs samples treated under the condition of Ar

flow rate 10

30 cm

/min

sputtering power 20 W and cleaning time 15 min give the best cleaning effect

the photoluminescence intensity increases by 139.12%

and the AsO and GaO bonds on the GaAs surface decrease greatly.

关键词

等离子清洗GaAs基片发光强度

Keywords

plasma cleaningGaAs substratesphotoluminescence intensity

references

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