电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性

王英; 郝振东; 张霞; 张家骅

doi:10.3788/fgxb20133403.0251

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电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性

半导体发光、激光和光电性质 | 更新时间：2020-08-12

- 电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性
- Optical Storage and Spectrum Properties of Electron Trapping Materials SrS:Eu, Sm, Er
- 发光学报 2013年34卷第3期页码：251-256
- 作者机构：
  
  1. 中国科学院大学, 北京 100049
  2. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所, 吉林长春 130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10834006,10774141,10904141,10904140)();国家科技部项目(2006CB601104)();吉林省科技发展计划(20
- DOI：10.3788/fgxb20133403.0251
  中图分类号： O482.31
- 纸质出版日期：2013-3-10，
  
  收稿日期：2012-12-14，
  
  修回日期：2013-1-15，
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王英, 郝振东, 张霞, 张家骅. 电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性[J]. 发光学报, 2013,34(3): 251-256

WANG Ying, HAO Zhen-dong, ZHANG Xia, ZHANG Jia-hua. Optical Storage and Spectrum Properties of Electron Trapping Materials SrS:Eu, Sm, Er[J]. Chinese Journal of Luminescence, 2013,34(3): 251-256
王英, 郝振东, 张霞, 张家骅. 电子俘获材料SrS:Eu,Sm,Er的光谱特性和光存储特性[J]. 发光学报, 2013,34(3): 251-256 DOI： 10.3788/fgxb20133403.0251.

WANG Ying, HAO Zhen-dong, ZHANG Xia, ZHANG Jia-hua. Optical Storage and Spectrum Properties of Electron Trapping Materials SrS:Eu, Sm, Er[J]. Chinese Journal of Luminescence, 2013,34(3): 251-256 DOI： 10.3788/fgxb20133403.0251.

摘要

提出一种Er

改进的电子俘获光存储材料SrS:Eu

0.002

其中

0.006。通过水热反应

研究了不同退火温度对荧光粉晶相形成的影响

以及不同含量的Er

对荧光粉的发光性质以及光存储特性的影响。结果表明

的引入导致荧光增强及光存储特性提高。当Er

的摩尔分数

=0.003时

荧光强度、光激励发光强度及光存储量出现最大值

分别为不含Er

时的1.9倍、2倍和3.5倍。同时

的掺入不改变样品的晶体结构和衰减特性。

Abstract

Er modified electron trapping optical storage materials SrS:Eu

0.002

are prepared by hydrothermal method. The effect of temperature on crystal phase formation

Er content on optical storage and luminescence properties are studied. It is revealed that the Er induced luminescent enhancement and the optical storage properties improved. The maximum luminescence intensity

Photostimulated luminescence intensity and optical storage are obtained at

=0.003

which is as high as 1.9 times

2 times and 3.5 times of the Er free phosphor

respectively. The introduction of Er didn't change the crystal structure and Photostimulated luminescence decay curve properties of the sample. The photostimulated luminescence decay curve can be will-fitted into a double exponential function.

关键词

SrS电子俘获光存储光激励

Keywords

SrSelectron trappingoptical storagephotostimulated

references

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