400 nm高性能紫光LED的制作与表征

王东盛; 郭文平; 张克雄; 梁红伟; 宋世巍; 杨德超; 申人升; 柳阳; 夏晓川; 骆英民; 杜国同

doi:10.3788/fgxb20133402.0225

您当前的位置：

首页 >

文章列表页 >

400 nm高性能紫光LED的制作与表征

器件制备及器件物理 | 更新时间：2020-08-12

- 400 nm高性能紫光LED的制作与表征
- Fabrication of High-performance 400 nm Violet Light Emitting Diode
- 发光学报 2013年34卷第2期页码：225-229
- 作者机构：
  
  1. 大连理工大学物理与光电学院,辽宁大连,116024
  2. 江苏新广联科技股份有限公司, 江苏无锡 214192
  3. 吉林大学电子科学与工程学院集成光电子国家重点实验室, 吉林长春 130012
  4. 中国科学院上海微系统与信息研究所信息功能材料国家重点实验室上海,200050
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20133402.0225
  中图分类号： TN383.1
- 纸质出版日期：2013-2-10，
  
  收稿日期：2012-11-20，
  
  修回日期：2012-12-8，
扫描看全文
王东盛, 郭文平, 张克雄, 梁红伟, 宋世巍, 杨德超, 申人升, 柳阳, 夏晓川, 骆英民, 杜国同. 400 nm高性能紫光LED的制作与表征[J]. 发光学报, 2013,34(2): 225-229

WANG Dong-sheng, GUO Wen-ping, ZHANG Ke-xiong, LIANG Hong-wei, SONG Shi-wei, YANG De-chao, SHEN Ren-sheng, LIU Yang, XIA Xiao-chuan, LUO Ying-min, DU Guo-tong. Fabrication of High-performance 400 nm Violet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2013,34(2): 225-229
王东盛, 郭文平, 张克雄, 梁红伟, 宋世巍, 杨德超, 申人升, 柳阳, 夏晓川, 骆英民, 杜国同. 400 nm高性能紫光LED的制作与表征[J]. 发光学报, 2013,34(2): 225-229 DOI： 10.3788/fgxb20133402.0225.

WANG Dong-sheng, GUO Wen-ping, ZHANG Ke-xiong, LIANG Hong-wei, SONG Shi-wei, YANG De-chao, SHEN Ren-sheng, LIU Yang, XIA Xiao-chuan, LUO Ying-min, DU Guo-tong. Fabrication of High-performance 400 nm Violet Light Emitting Diode[J]. Chinese Journal of Luminescence, 2013,34(2): 225-229 DOI： 10.3788/fgxb20133402.0225.

摘要

利用金属有机物化学气相沉积技术在蓝宝石衬底表面制备了带有p-AlGaN电子阻挡层的400 nm高性能紫光InGaN多量子阱发光二极管。制作了3种紫光LED

分别带有不同p-AlGaN电子阻挡层结构:Al摩尔分数为9%的p-AlGaN电子阻挡层;Al摩尔分数为11%的p-AlGaN电子阻挡层;Al摩尔分数为20%的10对p-AlGaN/GaN超晶格电子阻挡层。带有高浓度Al电子阻挡层的紫光LED的光输出功率高于低浓度Al电子阻挡层的紫光LED。带有10对p-AlGaN/GaN超晶格电子阻挡层的紫光LED的光输出功率获得了极大的提高

在20 mA注入电流时测试得到的光输出功率为21 mW。此外

该LED同时显示了在高注入电流下接近线性的I-L特性曲线和在LED芯片表面均匀的发光强度分布。

Abstract

High-performance 400 nm violet InGaN multi-quantum-wells light-emitting diodes (LED) with p-AlGaN electron blocking layer were fabricated on sapphire substrate by metal organic chemical vapor deposition technique. Different kinds of p-AlGaN electron blocking layers were grown in three violet LEDs: bulk p-AlGaN with Al mole fraction of 9%

bulk p-AlGaN with Al mole fraction of 11% and super lattice p-AlGaN/GaN with Al mole fraction of 20%. The output power of violet LED with bulk p-AlGaN(11%) is higher than the LED with bulk p-AlGaN(9%). Typically

the output power of the LED with 10 pairs of p-AlGaN/GaN super lattice electron blocking layer has been greatly improved. A LED with an output power of 21 mW at an injection current of 20 mA is achieved. In additional

the LED also shows an almost linear I-L characteristics at high injection current and uniform intensity mapping on LED chip surface.

关键词

金属有机物化学气相沉积紫光发光二极管GaN发光二极管电子阻挡层超晶格

Keywords

metal organic chemical vapor depositionviolet light emitting diodesGaN light emitting diodeselectron blocking layersuper lattice

references

Nakamura S. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes [J]. Science, 1998, 281(5379):956-961.[2] Nakamura S, Senoh M, Iwasa N, et al. Superbright Green InGaN single-quantum-well-structure light-emitting diodes [J]. J. Appl. Phys., 1995, 34(10B):1332-1335.[3] Mukai T, Morita D, Nakamura S. High-power UV InGaN/AlGaN double-heterostructure LEDs [J]. J. Crystal Growth, 1998, 189/190(1/2):778-781.[4] Mukai T, Yamada M, Nakamura S. Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes [J]. Jpn. J. Appl. Phys., 1998, 37(11B):1358-1361.[5] Nakamura S, Senoh M, Nagahama S, et al. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J]. Jpn. J. Appl. Phys., 1997, 36(2):1568-1571.[6] Wang H X, Li H D, Lee Y B, et al. Fabrication of high-performance 370 nm ultraviolet light-emitting diodes [J]. J. Crystal Growth, 2004, 264(1/2/3):48-52.[7] Wierer J J, Fischer A J, Koleske D D. The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices [J]. Appl. Phys. Lett., 2010, 96(5):051107-1-3 [8] Mukai T, Nakamura S. Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates [J]. Jpn. J. Appl. Lett., 1999, 38(10):5735-5739. [9] Uchida K, Tang T, Goto S, et al. Spiral growth of InGaN/InGaN quantum wells due to Si doping in the barrier layers [J]. Appl. Phys. Lett., 1999, 74(8):1153-1155.[10] Guo X, Schubert E F. Current crowding and optical saturation effects in GaInN/GaN light-emitting diodes grown on insulating substrates [J]. Appl. Phys. Lett., 2001, 78(21):3337-3339.[11] Kim H, Park S J, Hwang H, et al. Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs [J]. Appl. Phys.Lett., 2002, 81(7):1326-1328.[12] Cho Y H, Song J J, Keller S, et al. Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J]. Appl. Phys. Lett., 1998, 73(8):1128-1130.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

电子阻挡层Al组分对GaN基蓝光激光二极管光电性能的影响

MOCVD法制备BGaN薄膜

6H-SiC衬底上AlGaN基垂直结构紫外LED的制备

超薄溶液LPE技术生长GaInAsP/InP超晶格的理论与实验