GUO Wei-ling, FAN Xing, CUI De-sheng, WU Guo-qing, YU Xin. Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime[J]. Chinese Journal of Luminescence, 2013,34(2): 213-217
GUO Wei-ling, FAN Xing, CUI De-sheng, WU Guo-qing, YU Xin. Rapid Reliability Evaluation Method of LED Based on Pseudo-failure Lifetime[J]. Chinese Journal of Luminescence, 2013,34(2): 213-217 DOI: 10.3788/fgxb20133402.0213.
An efficient and rapid reliability evaluation method of LED has been proposed. The pseudo-failure lifetime is tested and the lifetime data is analyzed by Minitab. The results show that the pseudo-failure lifetime of all samples are Weibull distribution. The reliability evaluation of LED products are made by comparing the scale parameters of Weibull distribution. This method has a certain reference value to reliability evaluation and life prediction of LED.
关键词
发光二极管定时截尾试验伪失效寿命威布尔分布
Keywords
LEDfixed time testpseud-failure lifetimeWeibull distribution
references
Gao W. Study of Substrate Transfer and Reliability of AlGaInP LED . Beijing: Beijing University of Technology, 2011.[2] Yang Y H, Zhou Y Q. Theoretical foundation of accelerated life testing (Ⅱ) [J]. J. Propulsion Technol.(推进技术), 2001, 22(5):353-356 (in Chinese).[3] Lu C J, Meeker W Q. Using degradation measures to estimate a time-to-failure distribution [J]. Technometrics, 1993, 35(2):161-174.[4] Pursiainen O, Linder N, Jaeger A, et al. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes [J]. Appl. Phys. Lett., 2001, 79(18):2895-2896.[5] Altieri P, Jaeger A, Windisch R, et al. Internal quantum efficiency of high-brightness AlGaInP light-emitting devices [J]. J. Appl. Phys., 2005, 98(8):086101-1-3.[6] Xiao Y P, Mo C L, Qiu C, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):364-368 (in Chinese).[7] Yang L Q, Hu J Z, Kim L, et al. Variation of thermal resistance with input power in LEDs [J]. Phys. Status Solidi C:Current Topics in Solid State Physics, 2006, 3(6):2187-2190.[8] Hu J Z, Yang L Q, Shin M W. Mechanism and thermal effect of delamination in light-emitting diode packages [J]. Microelectronics Journal, 2007, 38(2):157-163.[9] Yang S C. Failure and degradation mechanisms of high-power white light emitting diodes [J]. Microelectron. Reliab., 2010, 50(7):959-964.[10] Wu G Q, Guo W L, Zhu Y X, et al. Effects of human body mode electrostatic on carrier movement and the reliability of GaN-based blue light-emitting diode [J]. Chin. J. Lumin.(发光学报), 2012, 33(10):1132-1137 (in Chinese).[11] Deng A M. Research on Reliability Technology of High-reliability and Long-lifetime Products . Changsha: National Defense Science and Technology University, 2006.[12] Zhang X F, Zhao Y. Weibull reliability analysis in small samples based on LSSVM [J]. Chin. Mechan. Eng.(中国机械工程), 2012, 23(16):1967-1971 (in Chinese).