p型CuInS2花状微球的液相可控合成及其电学性能表征

吴义良; 周国方; 王文坚; 张梓晗; 吴春艳

doi:10.3788/fgxb20133402.0154

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p型CuInS₂花状微球的液相可控合成及其电学性能表征

半导体发光、激光和光电性质 | 更新时间：2020-08-12

- p型CuInS₂花状微球的液相可控合成及其电学性能表征
- Solution-based Controllable Synthesis of p-type CuInS₂ Flower-like Microspheres and Their Electrical Characterization
- 发光学报 2013年34卷第2期页码：154-159
- 作者机构：
  
  合肥工业大学电子科学与应用物理学院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  国家自然科学基金青年基金( 20901021)资助项目()
- DOI：10.3788/fgxb20133402.0154
  中图分类号： O611.6
- 纸质出版日期：2013-2-10，
  
  收稿日期：2012-10-26，
  
  修回日期：2012-11-27，
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吴义良, 周国方, 王文坚, 张梓晗, 吴春艳. p型CuInS2花状微球的液相可控合成及其电学性能表征[J]. 发光学报, 2013,34(2): 154-159

WU Yi-liang, ZHOU Guo-fang, WANG Wen-jian, ZHANG Zi-han, WU Chun-yan. Solution-based Controllable Synthesis of p-type CuInS2 Flower-like Microspheres and Their Electrical Characterization[J]. Chinese Journal of Luminescence, 2013,34(2): 154-159
吴义良, 周国方, 王文坚, 张梓晗, 吴春艳. p型CuInS2花状微球的液相可控合成及其电学性能表征[J]. 发光学报, 2013,34(2): 154-159 DOI： 10.3788/fgxb20133402.0154.

WU Yi-liang, ZHOU Guo-fang, WANG Wen-jian, ZHANG Zi-han, WU Chun-yan. Solution-based Controllable Synthesis of p-type CuInS2 Flower-like Microspheres and Their Electrical Characterization[J]. Chinese Journal of Luminescence, 2013,34(2): 154-159 DOI： 10.3788/fgxb20133402.0154.

摘要

以十六烷基三甲基溴化铵(CTAB)为表面活性剂

在乙二醇(EG)中进行溶剂热反应

成功合成了四方晶系CuInS

花状微球。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、光电子能谱(XPS)以及紫外-可见吸收光谱等表征其形貌、结构及成分

并构建了基于其的底栅型场效应器件(Back-gate FET)。实验结果表明:p型CuInS

微球所需合成温度为200 ℃

禁带宽度为1.62 eV

电导率约为2 Scm

-1

。CuInS

微球有望用于低耗、高效CuInS

基光伏器件的制备。

Abstract

Tetragonal CuInS

flower-like microspheres were successfully synthesized through the solvothermal reaction in ethylene glycol (EG) with the assistance of cationic surfactant cetyltrimethylammonium bromide (CTAB). The morphology

structure and composition of the products were characterized by X-ray diffraction (XRD)

scanning electron microscope (SEM)

photoelectron spectroscopy (XPS) and UV-Vis spectroscopy

respectively. XRD spectra showed that the lowest temperature for the synthesis of pure CuInS

was 200 ℃. CuInS

microspheres obtained at the temperature 200 ℃ and 220 ℃ were verified to be Cu-rich and In-rich

respectively. UV-Vis spectrum showed that there existed intensity absorption in the visible region for CuInS

microspheres obtained at 200 ℃. The band gap was estimated to be ~1.62 eV

which is very close to that of bulk CuInS

. Back-gate field effect transistor based on CuInS

microspheres obtained at 200 ℃ was constructed and their electrical characterizations indicated that as-prepared CuInS

microspheres were p-type semiconductor with conductivity of ~2 Scm

-1

which is similar to that of p-type CuInS

films. As-prepared CuInS

microspheres showed their potential application in the fields of low-cost and high-performance photovoltaic devices.

关键词

CuInS2微球场效应器件光伏器件

Keywords

CuInS2microspheresfield effect transistor (FET)photovoltaic devices

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