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集成光电子学国家重点联合实验室 吉林大学电子科学与工程学院, 吉林 长春 130012
纸质出版日期:2013-1-10,
收稿日期:2012-9-11,
修回日期:2012-11-1,
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殷伟, 张金香, 崔夕军, 赵旺, 王辉, 史志峰, 董鑫, 张宝林, 杜国同. MOCVD法生长Ga、P掺杂的ZnO薄膜[J]. 发光学报, 2013,(1): 82-86
YIN Wei, ZHANG Jin-xiang, CUI Xi-jun, ZHAO Wang, WANG Hui, SHI Zhi-feng, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Ga-doped and P-doped ZnO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013,(1): 82-86
殷伟, 张金香, 崔夕军, 赵旺, 王辉, 史志峰, 董鑫, 张宝林, 杜国同. MOCVD法生长Ga、P掺杂的ZnO薄膜[J]. 发光学报, 2013,(1): 82-86 DOI: 10.3788/fgxb20133401.0082.
YIN Wei, ZHANG Jin-xiang, CUI Xi-jun, ZHAO Wang, WANG Hui, SHI Zhi-feng, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Ga-doped and P-doped ZnO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013,(1): 82-86 DOI: 10.3788/fgxb20133401.0082.
采用金属有机化学气相沉积法在蓝宝石衬底上制备Ga、P掺杂的ZnO薄膜
分别采用X射线衍射、扫描电子显微镜、霍尔效应测试、光致发光谱对样品进行表征。通过Ga、P掺杂分别得到n、p型ZnO薄膜
n型ZnO薄膜的载流子浓度可以达到1×10
19
cm
-3
p型ZnO薄膜的载流子浓度达到1.66×10
16
cm
-3
。所制备的ZnO薄膜具有
c
轴择优生长取向
并且p型ZnO薄膜具有较好的光致发光特性。
Gallium-doped zinc oxide (ZnO:Ga) and phosphorus-doped zinc oxide (ZnO:P) films were separately prepared on Al
2
O
3
substrates by metal organic chemical vapor deposition (MOCVD) method. The microstructure
electrical and optical properties were studied by X-ray diffraction (XRD)
scanning electron microscopy
Hall effect measurement
the room temperature photoluminescence (PL) spectrum
respectively. The n-type ZnO films with a carrier concentration of 1×10
19
cm
-3
and p-type films with carrier concentration of 1.66×10
16
cm
-3
were obtained. SEM images showed the films had highly oriented columnar structure. PL spectrum displayed p-type ZnO films showed good optical qualities.
MOCVDZnO薄膜Ga、P掺杂
Kim H S, Pearton S J, Norton D P. Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition [J]. J. Appl. Phys., 2007, 102(10):104904-1-8.
Xia X C, Zhao W, Jian Y T, et al. The structure and optical characters of the ZnO film grown on GaAs /Al2O3 substrate [J]. Appl. Surf. Sci., 2009, 255(12):6313-6317.
Liu B H, Yao B, Li Y F, et al. Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):855-858 (in English).
Chen X C, Kong C Y, Yang Y J, et al. Structural and photoluminescence analysis of Mn-doped ZnO thin films [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1247-1250 (in English).
Kohan A F, Ceder G, Morgan D, et al. First-principles study of native point defect s in ZnO [J]. Phys. Rev. B, 2000, 61(22):15019-15027.
Look D C, Hemsky J W, Sizelove J R. Residual native shallow donor in ZnO [J]. Phys. Rev. Lett., 1999, 82(12):2552-2555.
Zhou X C, Ye Z Z, Chen F G, et al. Growth of phosphorus doped p-type ZnO thin films by MOCVD [J]. Chin. J. Semicond. (半导体学报), 2006, 27(1):92-95 (in Chinese).
Ye J D, Gu S L, Sun X W, et al. Correlation between carrier recombination and p-type doping in P monodoped and In-P codoped ZnO epilayers [J]. Appl. Phys. Lett., 2007, 90(15):152108-1-3.
Ma Q B, Ye Z Z, He H P, et al. Highly near-infrared reflecting and transparent conducting ZnO:Ga films:substrate temperature effect [J]. J. Phys. D: Appl. Phys., 2008, 41(5):055302-1-3.
Huang Y C, Li Z Y, Chen H H, et al. Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition [J]. Thin Solid Films, 2009, 517(18):5537-5542.
Bellingham J R, Phillips W A, Adkins C J, et al. Intrinsic performance limits in transparent conducting oxides [J]. J. Mater. Sci. Lett., 1992, 11(5):263-265.
Minami T. New n-type transparent conducting oxides [J]. MRS Bull., 2000, 25(8):38-44.
Ellmer K. Resistivity of polycrystalline zinc oxide films:Current status and physical limit [J]. J. Phys. D: Appl. Phys., 2001, 34(21):3097-3108.
Ellmer K, Mientus R. Carrier transport in polycrystalline ITO and ZnO:Al Ⅱ:The influence of grain barriers and boundaries [J]. Thin Solid Films, 2008, 516(17):5829-5835.
Limpijumnong S, Zhang S B, Wei S H, et al. Doping by large-size-mismatched impurities:The microscopic origin of arsenicor antimony-doped p-type zinc oxide [J]. Phys. Rev. Lett., 2004, 92(15):155504-1-3.
Sun J C, Yang T P, Du G T, et al. Anneal effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition [J]. Appl. Surf. Sci., 2006, 254(22):7482-7485.
Zhao L, Yin W, Xia X C, et al. As-doped p-type ZnMgO thin films by MOCVD [J]. Chin. J. Lumin. (发光学报), 2011, 32(10):1020-1023 (in Chinese).
Lu J G, Ye Z Z, Huang J Y, et al. Influence of post deposition annealing on the crystallinity of zinc oxide films [J]. Chin. J.Semicond.(半导体学报), 2003, 24(7):729-736 (in Chinese).
Ozgur U, Alivov Y I, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98(4):041301-1-103.
Thiandoume C, Lusson A, Galtier P, et al. Temperature dependence of Zn1-xMgxO films grown on c-plane sapphire by metal organic vapor phase epitaxy [J]. J. Crystal Growth, 2010, 312(9):1529-1533.
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