1. 集成光电子学国家重点联合实验室 吉林大学电子科学与工程学院, 吉林 长春 130012
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殷伟, 张金香, 崔夕军, 赵旺, 王辉, 史志峰, 董鑫, 张宝林, 杜国同. MOCVD法生长Ga、P掺杂的ZnO薄膜[J]. 发光学报, 2013,(1): 82-86
YIN Wei, ZHANG Jin-xiang, CUI Xi-jun, ZHAO Wang, WANG Hui, SHI Zhi-feng, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Ga-doped and P-doped ZnO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013,(1): 82-86
殷伟, 张金香, 崔夕军, 赵旺, 王辉, 史志峰, 董鑫, 张宝林, 杜国同. MOCVD法生长Ga、P掺杂的ZnO薄膜[J]. 发光学报, 2013,(1): 82-86 DOI: 10.3788/fgxb20133401.0082.
YIN Wei, ZHANG Jin-xiang, CUI Xi-jun, ZHAO Wang, WANG Hui, SHI Zhi-feng, DONG Xin, ZHANG Bao-lin, DU Guo-tong. Ga-doped and P-doped ZnO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2013,(1): 82-86 DOI: 10.3788/fgxb20133401.0082.
采用金属有机化学气相沉积法在蓝宝石衬底上制备Ga、P掺杂的ZnO薄膜,分别采用X射线衍射、扫描电子显微镜、霍尔效应测试、光致发光谱对样品进行表征。通过Ga、P掺杂分别得到n、p型ZnO薄膜,n型ZnO薄膜的载流子浓度可以达到1×10,19,cm,-3,p型ZnO薄膜的载流子浓度达到1.66×10,16,cm,-3,。所制备的ZnO薄膜具有,c,轴择优生长取向,并且p型ZnO薄膜具有较好的光致发光特性。
Gallium-doped zinc oxide (ZnO:Ga) and phosphorus-doped zinc oxide (ZnO:P) films were separately prepared on Al,2,O,3, substrates by metal organic chemical vapor deposition (MOCVD) method. The microstructure, electrical and optical properties were studied by X-ray diffraction (XRD), scanning electron microscopy, Hall effect measurement, the room temperature photoluminescence (PL) spectrum, respectively. The n-type ZnO films with a carrier concentration of 1×10 ,19, cm,-3, and p-type films with carrier concentration of 1.66×10,16, cm,-3, were obtained. SEM images showed the films had highly oriented columnar structure. PL spectrum displayed p-type ZnO films showed good optical qualities.
MOCVDZnO薄膜Ga、P掺杂
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