射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管

信恩龙; 李喜峰; 陈龙龙; 石继锋; 李春亚; 张建华

doi:10.3788/fgxb20123310.1149

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射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管

器件制备及器件物理 | 更新时间：2020-08-12

- 射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管
- Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering
- 发光学报 2012年33卷第10期页码：1149-1152
- 作者机构：
  
  上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61006005)();上海市科学技术委员会项目(10dz1100102)资助项目()
- DOI：10.3788/fgxb20123310.1149
  中图分类号： TN321+.5
- 纸质出版日期：2012-10-10，
  
  收稿日期：2012-6-5，
  
  修回日期：2012-8-1，
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信恩龙, 李喜峰, 陈龙龙, 石继锋, 李春亚, 张建华. 射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管[J]. 发光学报, 2012,(10): 1149-1152

XIN En-long, LI Xi-feng, CHEN Long-long, SHI Ji-feng, LI Chun-ya, ZHANG Jian-hua. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2012,(10): 1149-1152
信恩龙, 李喜峰, 陈龙龙, 石继锋, 李春亚, 张建华. 射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管[J]. 发光学报, 2012,(10): 1149-1152 DOI： 10.3788/fgxb20123310.1149.

XIN En-long, LI Xi-feng, CHEN Long-long, SHI Ji-feng, LI Chun-ya, ZHANG Jian-hua. Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistor at Low Temperature by RF Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2012,(10): 1149-1152 DOI： 10.3788/fgxb20123310.1149.

摘要

利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜

采用X射线衍射(XRD)表征薄膜的晶体结构

原子力显微镜(AFM)观察其表面形貌

分光光度计测量其透光率。结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整

可见光透射率大于80%。将室温制备的IGZO薄膜作为有源层

在低温(＜200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZOTFT)

获得的a-IGZO-TFT器件的场效应迁移率大于6.0cm

·V

-1

·s

-1

开关比约为10

阈值电压为1.2V

亚阈值摆幅(

)约为0.9V/dec

偏压应力测试a-IGZOTFT阈值电压随时间向右漂移。

Abstract

The indium gallium zinc oxide (IGZO) thin films were fabricated by RF magnetron sputtering at room temperature in this paper.The crystal structure

surface morphology

and optical electrical of the IGZO films were investigated by X-ray diffraction (XRD)

atom force microscopy (AFM)

and photometry

respectively.The results revealed that the IGZO film was amorphous

the surface of the films was uniform and smooth.A good optical transmittance of over 80% was obtained in the visible light.The IGZO thin film transistors were successfully fabricated at low temperature (＜200℃) using the room temperature sputtering IGZO thin film as the active layer.The field effect mobility of a-IGZO TFT was larger than 6.0 cm

·V

-1

·s

-1

.The device's on/off ratio was 10

threshold voltage was 1.2 V and subthreshold voltage swing is 0.9 V/dec.Constant bias stress testing showed that the a-IGZO TFT threshold voltage exhibited positive shifts as time increased.

关键词

非晶铟镓锌氧薄膜薄膜晶体管场效应迁移率

Keywords

amorphous indium gallium zinc oxide thin filmthin film transistorfield effect mobility

references

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