AgOx界面插入层对GZO电极LED器件性能的影响

顾文; 石继锋; 李喜峰; 张建华

doi:10.3788/fgxb20123310.1127

您当前的位置：

首页 >

文章列表页 >

AgO_x界面插入层对GZO电极LED器件性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- AgO_x界面插入层对GZO电极LED器件性能的影响
- Effect of AgO_x Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode
- 发光学报 2012年33卷第10期页码：1127-1131
- 作者机构：
  
  1. 上海大学机电工程与自动化学院上海,200072
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51072111)();973计划(2011CB013100)资助项目()
- DOI：10.3788/fgxb20123310.1127
  中图分类号： TN301
- 纸质出版日期：2012-10-10，
  
  收稿日期：2012-7-11，
  
  修回日期：2012-8-7，
扫描看全文
顾文, 石继锋, 李喜峰, 张建华. AgOx界面插入层对GZO电极LED器件性能的影响[J]. 发光学报, 2012,(10): 1127-1131

GU Wen, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of AgOx Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012,(10): 1127-1131
顾文, 石继锋, 李喜峰, 张建华. AgOx界面插入层对GZO电极LED器件性能的影响[J]. 发光学报, 2012,(10): 1127-1131 DOI： 10.3788/fgxb20123310.1127.

GU Wen, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of AgOx Interface Insertion Layer on The Performance of LEDs with Ga-doped ZnO Electrode[J]. Chinese Journal of Luminescence, 2012,(10): 1127-1131 DOI： 10.3788/fgxb20123310.1127.

摘要

采用磁控溅射的方法在p-GaN上制备了GZO透明导电薄膜

通过在p-GaN和GZO界面之间插入AgO

薄层来改善LED器件的接触性能。研究结果表明:氮气退火后

采用界面插入层的AgO

/GZO薄膜电阻率为5.8×10

-4

Ω·cm

在可见光的透过率超过80%。AgO

界面插入层有效地降低了GZO与p-GaN之间的接触势垒

表现出良好的欧姆接触特性

同时使LED器件的光电性能获得了显著的提高。在50mA的注入电流下

相比于常规的GZO电极LED器件

AgO

/GZO电极LED器件的正向电压由9.68V降至6.92V

而发光强度提高了13.5%。

Abstract

GZO transparent conductive layers were deposited on p-GaN surface by magnetron sputtering.AgO

thin films were inserted between p-GaN and GZO to improve the performance of LED devices.The AgO

/GZO thin film exhibited low resistivity (5.8×10

-4

Ω·cm) and high transmittance (above 80% in visible range) after nitrogen annealing.The AgO

interface insertion layer could effectively reduce the contact barrier

leading to good Ohmic contact characteristics of GZO/p-GaN and improved photoelectric performance of LEDs.With 50 mA injection current

the forward voltage reduced from 9.68 V to 6.92 V and the luminous intensity increased by 13.5% compared with conventional GZO electrode LEDs.

关键词

LED界面插入层GZO电极欧姆接触

Keywords

LEDinsertion layerGZO electrodeohmic contact

references

Ishikawa H,Kobayashi S,Koide Y,et al. Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces [J]. J.Appl.Phys.,1997,81(3):1315-1322.

Koide Y,Maeda T,Kawakami T,et al. Effects of annealing in an oxygen ambient on electrical properties of Ohmic contacts to p-type GaN [J]. J.Electron.Mater.,1999,28(3):341-346.

Kim H,Kim D J,Park S J,et al. Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes [J]. J.Appl.Phys., 2001,89(2):1506-1508.

Lee S H,Son H K,Kim S J,et al. High brightness GaN-based LEDs using ITO/n+-InGaN/InGaN superlattice/n+-GaN/p-GaN tunneling junction [J]. Phys.Stat.Sol.(A),2004,201(12):2726-2729.

Horng R H,Wuu D S,Lien Y C,et al. Low-resistance and high-transparency Ni/ITO Ohmic contacts to p-type GaN [J]. Appl.Phys.Lett.,2001,79(18):2925-2927.

Kim S Y,Jang H W,Lee J L.Effect of an indium-tin-oxide overlayer on transparent Ni/Au Ohmic contact on p-type GaN [J]. Appl.Phys.Lett.,2003,82(1):61-63.

Pan S M,Tu R C,Fan Y M,et al. Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts [J]. IEEE Photon.Technol.Lett.,2003,15(5):646-648.

Igasaki Y,Kanma H.Argon gas pressure dependence of the properties of transparent conducting ZnO:Al films deposited on glass substrates [J]. Appl.Surf.Sci.,2001,169(170):508-511.

Nakahara K,Tamura K,Sakai M,et al. Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes [J]. Jpn.J.Appl.Phys., 2004,43(2A):L180-L182.

Wang W J,Li X F,Zhang J H.Effect of ITO interface modulation layer on the performances of LEDs with Ga-doped ZnO electrode [J]. Chin.J.Lumin.(发光学报),2012,33(2):211-215 (in Chinese).

Wang S F,Li X F,Zhang J H.Effects of surface and chemical treatment and annealing on p-GaN/ZnO:Ga contact [J]. Chin.J.Lumin.(发光学报),2010,31(6):848-853 (in Chinese).

Song J O,Kyong K,Seong J P,et al. Highly low resistance and transpartent Ni/ZnO Ohmic contacts to p-type GaN [J]. Appl.Phys.Lett.,2003,83(3):479-481.

Byung D A,Sang H O,Choong H L,et al. Influence of thermal annealing ambient on Ga-doped ZnO thin films [J]. J.Crystal Growth, 2007,309(2):128-133.

Kim H K,Yi M S,Lee S N.Low-resistance and highly transparent Ag/IZO Ohmic contact to p-type GaN [J]. Thin Solid Films,2009,517(14):4039-4042.

Song J O,Kwak J S,Park Y,et al. Ohmic and degradation mechanisms of Ag contacts on p-type GaN [J]. Appl.Phys.Lett., 2005,86(6):062104-1-3.

Tian M M,Fan Y,Liu X Y.Fabrication and characteristics of transparent conducting bismuth-doped thin indium oxide Film [J]. Chin.J.Lumin.(发光学报), 2010,31(4):605-608 (in Chinese).

Raju N,Kumar K J,Subrahmanyam A.Physical properties of silver oxide thin films by pulsed laser deposition:Effect of oxygen pressure during growth [J]. J.Phys.D: Appl.Phys., 2009,42(13):135411-1-5.

Yang G H,Li X Y.Effect of the electrode layout on the silicon LED properties [J]. Chin.J.Lumin.(发光学报),2011,32(4):374-377 (in Chinese). 收稿日期:2012-06-09;修订日期:2012-07-30 基金项目:国家科技支撑计划(2011BAE01B14)资助项目作者简介:吴国庆(1986-),男,天津人,主要从事半导体发光器件及其可靠性的研究。E-mail:dagetianjin@163.com,Tel:(010)67391641-835

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

三价铋离子掺杂发光材料研究进展

红光/近红外发射碳点制备、光学调控与应用

Mn⁴⁺激活的典型LED红色荧光粉研究进展

Pd/p-GaN欧姆接触退化机理

封装硅胶对深海LED光源出光光通量的影响