WANG Xin-jian, SONG Hang, LI Da-bing, JIANG Hong, LI Zhi-ming, MIAO Guo-qing, CHEN Yi-ren, SUN Xiao-juan. WANG Xin-jian,SONG Hang,LI Da-bing,JIANG Hong,LI Zhi-ming,MIAO Guo-qing,CHEN Yi-ren,SUN Xiao-juan[J]. Chinese Journal of Luminescence, 2012,(10): 1089-1094
WANG Xin-jian, SONG Hang, LI Da-bing, JIANG Hong, LI Zhi-ming, MIAO Guo-qing, CHEN Yi-ren, SUN Xiao-juan. WANG Xin-jian,SONG Hang,LI Da-bing,JIANG Hong,LI Zhi-ming,MIAO Guo-qing,CHEN Yi-ren,SUN Xiao-juan[J]. Chinese Journal of Luminescence, 2012,(10): 1089-1094 DOI: 10.3788/fgxb20123310.1089.
AlN films were prepared by DC reactive magnetron sputtering
and the effects of deposition conditions and GaN buffer layers on their qualities were also investigated.The crystal structure and surface morphology of films were characterized by X-ray diffractometer (XRD) and scanning electron microscopy (SEM).The XRD results show that low pressure
short target-to-substrate distance and appropriate N
2
partial pressure can facilitate the (002) preferential orientation AlN films.With the increase of deposition time the full width half maximum of (002) diffraction peak for the films deposited on 50-nm-thick GaN buffer layers decreases drastically
but it was nearly unchanged for AlN films deposited on 1-μm-thick GaN films.The SEM measurements reveal that the grain size distribution of AlN film deposited on 1-μm-thick GaN films is much uniformer than on 50-nm-thick GaN buffer layers in the early stages of deposition
and with the increase of deposition time their grain size distributions can nearly reach the same.
关键词
AlNGaN缓冲层晶体结构晶粒尺寸
Keywords
AlNGaN buffer layercrystal structuregrain size
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