外延在蓝宝石衬底上的非掺杂GaN研究

李影智; 邢艳辉; 韩军; 陈翔; 邓旭光; 徐晨

doi:10.3788/fgxb20123310.1084

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外延在蓝宝石衬底上的非掺杂GaN研究

器件制备及器件物理 | 更新时间：2020-08-12

- 外延在蓝宝石衬底上的非掺杂GaN研究
- Investigation of Non-doped GaN Grown on Sapphire Substrate
- 发光学报 2012年33卷第10期页码：1084-1088
- 作者机构：
  
  北京工业大学电子信息与控制工程学院光电子技术省部共建教育部重点实验室北京,100124
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划(863计划)(2008AA03Z402)();北京市自然科学基金(4102003,4112006,4092007)();国家自然科学基金(612
- DOI：10.3788/fgxb20123310.1084
  中图分类号： O484
- 纸质出版日期：2012-10-10，
  
  收稿日期：2012-7-5，
  
  修回日期：2012-8-13，
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李影智, 邢艳辉, 韩军, 陈翔, 邓旭光, 徐晨. 外延在蓝宝石衬底上的非掺杂GaN研究[J]. 发光学报, 2012,(10): 1084-1088

LI Ying-zhi, XING Yan-hui, HAN Jun, CHEN Xiang, DENG Xu-guang, XU Chen. Investigation of Non-doped GaN Grown on Sapphire Substrate[J]. Chinese Journal of Luminescence, 2012,(10): 1084-1088
李影智, 邢艳辉, 韩军, 陈翔, 邓旭光, 徐晨. 外延在蓝宝石衬底上的非掺杂GaN研究[J]. 发光学报, 2012,(10): 1084-1088 DOI： 10.3788/fgxb20123310.1084.

LI Ying-zhi, XING Yan-hui, HAN Jun, CHEN Xiang, DENG Xu-guang, XU Chen. Investigation of Non-doped GaN Grown on Sapphire Substrate[J]. Chinese Journal of Luminescence, 2012,(10): 1084-1088 DOI： 10.3788/fgxb20123310.1084.

摘要

采用改变生长条件的方法制备GaN薄膜

在(0001)面蓝宝石衬底上利用金属有机物化学气相沉积技术制备了不同样品

并借助X射线双晶衍射仪(XRD)、PL谱测试仪和光学显微镜对材料进行了分析。XRD(0002)面和(10

2)面测试均表明TMGa流量为70cm

/min时样品位错密度最低。利用该TMGa流量进一步制备了改变生长温度的样品。XRD和PL谱测试结果表明

提高生长温度有利于提高GaN样品的晶体质量和光学性能。最后

利用光学显微镜对样品的表面形貌进行了分析。

Abstract

GaN thin films were prepared by changing the growth condition.The epitaxial layers were grown by metal-organic vapor phase epitaxy on sapphire (0001) substrates

and were characterized by photoluminescence

optical microscope and X-ray double crystal diffraction.In the experiment

we used full width at half maximum of X-ray double crystal diffraction to detect the dislocation density

and found the samples dislocation density was lowest when TMGa flows at 70 cm

/min.Using the best value of TMGa flows

we grew the samples by changing the growth temperature.Photoluminescence spectra showed that higher growth temperature is conducive to improve the optical properties

reduce the Ga vacancies density in the GaN samples

and improve the quality of GaN crystal.Optical microscope test indicated that the increasing of the growth temperature will improve the surface morphology

it gives the same conclusion with photoluminescence spectra test.

关键词

金属有机物化学气相沉积(MOCVD)非掺杂氮化镓(GaN)X射线双晶衍射(DCXRD)光致荧光(PL)光谱

Keywords

metal-organic chemical vapor deposition(MOCVD)non-doped GaNdouble-crstal X-ray diffractionphotoluminescence spectra

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