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1. 兰州大学物理学院 微电子研究所,甘肃 兰州,730000
2. 空军大连通信士官学校,辽宁 大连,116600
3. 兰州大学 磁学与磁性材料教育部重点实验室,甘肃 兰州,730000
纸质出版日期:2012-9-10,
收稿日期:2012-5-17,
修回日期:2012-7-12,
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谢吉鹏, 吕文理, 杨汀, 姚博, 彭应全. 基于酞菁铜的有机光敏场效应管[J]. 发光学报, 2012,33(9): 991-995
XIE Ji-peng, LV Wen-li, YANG Ting, YAO Bo, PENG Ying-quan. The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine[J]. Chinese Journal of Luminescence, 2012,33(9): 991-995
谢吉鹏, 吕文理, 杨汀, 姚博, 彭应全. 基于酞菁铜的有机光敏场效应管[J]. 发光学报, 2012,33(9): 991-995 DOI: 10.3788/fgxb20123309.0991.
XIE Ji-peng, LV Wen-li, YANG Ting, YAO Bo, PENG Ying-quan. The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine[J]. Chinese Journal of Luminescence, 2012,33(9): 991-995 DOI: 10.3788/fgxb20123309.0991.
制备了基于酞菁铜(CuPc)的有机光敏场效应晶体管
对器件的光敏特性进行了研究。实验结果表明
基于金源漏电极的器件
在波长655 nm
光强100 mW/cm
2
的光照下
明/暗电流比约为0.4
光响应度约为2.55 mA/W;而铝为源漏电极的器件
可以获得高达10
4
的明/暗电流比
但光响应度降低为0.39 mA/W。
Organic field-effect transistors (OFETs) based on copper phthalocyanine were fabricated and their current-voltage characteristics were measured in dark/under illumination. The results showed that OFETs with Au as source/drain electrodes exhibited a photo-current/dark-current ratio of 0.4 and a photoresponsivity of 2.55 mA/W under illumination by a laser diode with a wavelength of 655 nm and power density of 100 mW/cm
2
; however
OFETs with Al as source/drain electrodes exhibited a photo-current/dark-current ratio up to 10
4
and a much lower photoresponsivity of 0.39 mA/W under the same conditions. The tremendous increase of photo-current/dark-current ratio is ascribed to the decrease of dark-current caused by Schottky contacts between Al source/drain electrodes and CuPc.
有机光敏场效应晶体管酞菁铜明/暗电流比光响应度
photoresponsive organic field-effect transistorscopper phthalocyaninephotocurrent/dark-current ratiophotoresponsivity
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