MOCVD外延生长AlGaAs组份的在线监测

王鹏程; 徐华伟; 张金龙; 宁永强

doi:10.3788/fgxb20123309.0985

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MOCVD外延生长AlGaAs组份的在线监测

器件制备及器件物理 | 更新时间：2020-08-12

- MOCVD外延生长AlGaAs组份的在线监测
- In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth
- 发光学报 2012年33卷第9期页码：985-990
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10974012,11074247,61106047,61176045,61106068,51172225,61006054)();国家自然科学基金重
- DOI：10.3788/fgxb20123309.0985
  中图分类号： O76
- 纸质出版日期：2012-9-10，
  
  收稿日期：2012-5-7，
  
  修回日期：2012-5-28，
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王鹏程, 徐华伟, 张金龙, 宁永强. MOCVD外延生长AlGaAs组份的在线监测[J]. 发光学报, 2012,33(9): 985-990

WANG Peng-cheng, XU Hua-wei, ZHANG Jin-long, NING Yong-qiang. In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth[J]. Chinese Journal of Luminescence, 2012,33(9): 985-990
王鹏程, 徐华伟, 张金龙, 宁永强. MOCVD外延生长AlGaAs组份的在线监测[J]. 发光学报, 2012,33(9): 985-990 DOI： 10.3788/fgxb20123309.0985.

WANG Peng-cheng, XU Hua-wei, ZHANG Jin-long, NING Yong-qiang. In-situ Monitoring and Determination of AlGaAs Composition During MOCVD Growth[J]. Chinese Journal of Luminescence, 2012,33(9): 985-990 DOI： 10.3788/fgxb20123309.0985.

摘要

利用反射各向异性谱(RAS)和反射谱在线监测了Al

As样品的金属有机化合物汽相淀积(MOCVD)外延生长过程。通过在线监测得到的RAS和反射谱可以敏感地反映出Al

As外延层组份发生的变化

从而优化外延生长工艺。实验表明

反射谱中的振荡周期可以在线计算组份和生长速率

利用反射谱中的振荡的第一个最小值与Al组份的线性关系

可以确定渐变组份初始值。通过在线计算得到的生长速率和组份与扫描电镜(SEM)和高分辨X射线衍射(HRXRD)测试得到的结果基本吻合。

Abstract

As sample were grown by metal-organic chemical vapor deposition (MOCVD) under the monitor of time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance. During the growth

a significant dependence of the RAS and normalized reflectance signals on the aluminium composition has been found

which can be used to optimize the growth processes. The experimental results indicate that the period of normalized reflectance oscillation was directly related to the composition and growth rate. The first minimum of the normalized reflectance oscillation of Al

As almost linearly with aluminium composition and could be used to determine the starting value of graded aluminium composition. The compositions and growth rate of Al

As are calculated by normalized reflectance transient spectra

the value is in excellent agreement with the experimental data obtained by ex-situ scanning electron microscope (SEM) and high resolution X-ray diffraction (HRXRD).

关键词

Ⅲ-Ⅴ族半导体化合物外延生长金属有机化合物汽相淀积反射各向异性谱

Keywords

Ⅲ-Ⅴ semiconductor compoundsepitaxial growthmetal-organic chemical vapor depositionreflectance anisotropy spectroscopy

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