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ZnCuInS量子点的变温光致发光
Temperature-dependent Photoluminescence of ZnCuInS Quantum Dots
- 发光学报 2012年33卷第9期 页码：923-928
- 作者机构：
1. 东北大学 理学院,辽宁 沈阳,110819
2. 发光学与应用国家重点实验室 中国科学院长春光学精密机械与物理研究所,吉林 长春,130033
- 作者简介：
- 基金信息：国家自然科学基金(51102227)资助项目()
DOI：10.3788/fgxb20123309.0923
中图分类号： O482.31纸质出版日期：2012-9-10，
收稿日期：2012-6-6，
修回日期：2012-6-24，
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陈肖慧, 王秀英, 赵家龙. ZnCuInS量子点的变温光致发光[J]. 发光学报, 2012,33(9): 923-928
CHEN Xiao-hui, WANG Xiu-ying, ZHAO Jia-long. Temperature-dependent Photoluminescence of ZnCuInS Quantum Dots[J]. Chinese Journal of Luminescence, 2012,33(9): 923-928
陈肖慧, 王秀英, 赵家龙. ZnCuInS量子点的变温光致发光[J]. 发光学报, 2012,33(9): 923-928 DOI： 10.3788/fgxb20123309.0923.
CHEN Xiao-hui, WANG Xiu-ying, ZHAO Jia-long. Temperature-dependent Photoluminescence of ZnCuInS Quantum Dots[J]. Chinese Journal of Luminescence, 2012,33(9): 923-928 DOI： 10.3788/fgxb20123309.0923.
摘要
测量了红色和深红色发光的ZnCuInS量子点在100~300 K温度范围内的光致发光光谱
研究了ZnCuInS量子点的发光机理
对ZnCuInS量子点的发光峰值能量、线宽和积分强度与温度的关系进行了细致的分析。在ZnCuInS量子点中观察到一种反常的发光峰值能量随着温度升高而增加的现象
同时发现ZnCuInS量子点的发光线宽很宽
约为300 meV
拟合积分强度与温度的关系曲线所得到的激活能为100 meV。这些结果表明
ZnCuInS量子点的发光不可能只来源于一种发光中心
而应该是来源于ZnCuInS量子点内部及表面的多种缺陷相关的多种发光中心组合。
Abstract
The photoluminescence (PL) spectra of ZnCuInS quantum dots (QDs) were measured in the temperature range from 100 to 300 K. The temperature dependences of the PL energy
linewidth
and intensity of the ZnCuInS QDs were investigated in detail. An anomalous increase in band gap of ZnCuInS QDs with temperature was observed. The full width at half maximum of the PL and thermal activation energy
E
a
of ZnCuInS QDs were 300 and 100 meV
respectively. These results suggested that the PL in the ZnCuInS QDs originated from the recombination of many kinds of defect-related emission centers in the interior and on the surface of the QDs.
关键词
ZnCuInS量子点纳米晶变温光致发光
Keywords
ZnCuInSquantum dotsnanocrystalstemperature-dependent photoluminescence
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