SiO2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响

贾辉; 陈一仁; 孙晓娟; 黎大兵; 宋航; 蒋红; 缪国庆; 李志明

doi:10.3788/fgxb20123308.0879

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SiO₂纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响

器件制备及器件物理 | 更新时间：2020-08-12

- SiO₂纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响
- Effect of SiO₂ Nanoparticles on Properties of a-AlGaN MSM UV Photodetectors
- 发光学报 2012年33卷第8期页码：879-882
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  国家基础研究发展计划(2011CB301901)();国家自然科学基金(51072196,51072195)();863计划(2011AA03A111)资助项目()
- DOI：10.3788/fgxb20123308.0879
  中图分类号： O472.8
- 纸质出版日期：2012-8-10，
  
  收稿日期：2012-4-27，
  
  修回日期：2012-5-20，
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贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. SiO2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响[J]. 发光学报, 2012,33(8): 879-882

JIA Hui, CHEN Yi-ren, SUN Xiao-juan, LI Da-bing, SONG Hang, JIANG Hong, MIAO Guo-qing, LI Zhi-ming. Effect of SiO2 Nanoparticles on Properties of a-AlGaN MSM UV Photodetectors[J]. Chinese Journal of Luminescence, 2012,33(8): 879-882
贾辉, 陈一仁, 孙晓娟, 黎大兵, 宋航, 蒋红, 缪国庆, 李志明. SiO2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响[J]. 发光学报, 2012,33(8): 879-882 DOI： 10.3788/fgxb20123308.0879.

JIA Hui, CHEN Yi-ren, SUN Xiao-juan, LI Da-bing, SONG Hang, JIANG Hong, MIAO Guo-qing, LI Zhi-ming. Effect of SiO2 Nanoparticles on Properties of a-AlGaN MSM UV Photodetectors[J]. Chinese Journal of Luminescence, 2012,33(8): 879-882 DOI： 10.3788/fgxb20123308.0879.

摘要

采用对

-AlGaN表面沉积SiO

纳米颗粒制备工艺得到了金属-半导体-金属(MSM)结构的

-AlGaN紫外探测器。与没有沉积SiO

纳米颗粒的探测器件相比

沉积SiO

纳米颗粒使器件的暗电流下降了一个数量级

峰值光谱响应度提高了近3个数量级

紫外/可见抑制比大于10

。

Abstract

The

-AlGaN Metal-semiconductor-Metal (MSM)ultraviolet photodetector (UV-PD) was fabricated

and the effect of SiO

nanoparticles (SNPs) on its properties was investigated. It was shown that the dark current of the UV-PD with SNPs was more than one order of magnitude lower than that of without SNPs. The peak responsivity was enhanced more than two orders of magnitude after deposition of the SNPs. The SNPs on

-AlGaN MSM UV-PDs usually formed at the termination of screw and mixed dislocations

which acts a role of passivating the carrier transport paths. Surface-deposited SNPs make photogenerated electrons and holes collected easily in two separated contacts

which lead to a higher device property.

关键词

SiO2纳米颗粒a-AlGaNMSM紫外探测器

Keywords

SiO2 nanoparticlesa-plane AlGaNMSM ultraviolet photodetectors

references

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Carrano J C, Li T, Grudowski P A, et al. Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN [J]. J. Appl. Phys., 1998, 83(11):6148-6160.

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