电子束辐照对GaN基LED发光性能的影响

于莉媛; 牛萍娟; 邢海英; 侯莎

doi:10.3788/fgxb20123308.0869

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电子束辐照对GaN基LED发光性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 电子束辐照对GaN基LED发光性能的影响
- Influence of Electron Beam Irradiation on The Luminescence Properties of GaN-based LED
- 发光学报 2012年33卷第8期页码：869-872
- 作者机构：
  
  1. 天津工业大学电气工程与自动化学院天津,300387
  2. 天津工业大学电子与信息工程学院, 天津 300387
  3. 大功率半导体照明应用系统教育部研究中心, 天津 300387
- 作者简介：
- 基金信息：
  
  国家863计划(2010AA03A1A7)();天津市科研院所技术开发工作扶持经费项目(FC2010001)资助项目()
- DOI：10.3788/fgxb20123308.0869
  中图分类号： TN305.94
- 纸质出版日期：2012-8-10，
  
  收稿日期：2012-4-28，
  
  修回日期：2012-5-30，
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于莉媛, 牛萍娟, 邢海英, 侯莎. 电子束辐照对GaN基LED发光性能的影响[J]. 发光学报, 2012,33(8): 869-872

YU Li-yuan, NIU Ping-juan, XING Hai-ying, HOU Sha. Influence of Electron Beam Irradiation on The Luminescence Properties of GaN-based LED[J]. Chinese Journal of Luminescence, 2012,33(8): 869-872
于莉媛, 牛萍娟, 邢海英, 侯莎. 电子束辐照对GaN基LED发光性能的影响[J]. 发光学报, 2012,33(8): 869-872 DOI： 10.3788/fgxb20123308.0869.

YU Li-yuan, NIU Ping-juan, XING Hai-ying, HOU Sha. Influence of Electron Beam Irradiation on The Luminescence Properties of GaN-based LED[J]. Chinese Journal of Luminescence, 2012,33(8): 869-872 DOI： 10.3788/fgxb20123308.0869.

摘要

研究了不同能量的电子束辐照对GaN基发光二极管(Light emitting diode

LED)发光性能的影响。利用实验室提供的电子束模拟空间电子辐射

对GaN基LED外延片进行1.5

3.0

4.5 MeV电子束辐照实验

并应用光致发光(Photoluminescence

PL)谱测试发光性能。结果表明:在1.5 MeV电子束辐照下

采用10 kGy剂量辐照时

LED的发光强度增加约25%;而在100 kGy剂量辐照时

LED的发光强度降低约16%。3 MeV的电子束辐照可使原来色纯度不高的LED的色纯度变好

而更高能量的辐照将会引起器件失效。

Abstract

The influence of different energy electron beam irradiation on the luminescence properties of GaN-based LED has been studied. GaN-based LED epitaxial wafers are irradiated under the simulation of space electron radiation by 1.5

3.0

4.5 MeV electron beam irradiation in the laboratory and photoluminescence (PL) spectra is applied to measure luminescent properties. The results show that LED luminous intensity increase about 25% when the radiation doses is 10 kGy with electron energy is 1.5 MeV

while reduced ~16% in dose irradiation in 100 kGy. Under 3 MeV electron beam irradiation

the color purity of LED increased

while in the higher energy irradiation the device failed.

关键词

电子束辐照LED发光性能氮化镓

Keywords

electron-beam irradiationLEDluminescent propertiesGaN

references

Salvo C J. Solide state light valve [J]. IEEE Transactions on Electron Devices, 1971, 18(9):748-755.

Zhao G C, Li P X, Hao Y. The effect of etching time on the quality of GaN grown on sapphire substrate [J]. Chin. J. Lumin.(发光学报), 2010, 31(5):624-627 (in Chinese).

Chernyak L, Osinsky A, Fuflyigin V, et al. Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices [J]. Appl. Phys. Lett., 2000, 77(6):875-877.

Morita D, Sano M, Yamamoto M, et al. Over 200 mW on 365 nm ultraviolet light emitting diode of GaN-free structure [J]. Physical Status Solid (a): Appl. Research, 2003, 200(1):114-117.

Everhart T E, Hoff P H. Determination of kilo volt electron energy dissipation vs. penetration distance in solid materials [J]. J. Appl. Phys., 1971, 42(13):5837-5846.

Gelhausen O, Klein H N, Phillips M R, et al. Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN [J]. Appl. Phys. Lett., 2002, 81(20):3747-3749.

Xiao Y P, Mo C L, Qiu C, et al. The aging characteristics of GaN-based blue LED on Si substrate [J]. Chin. J. Lumin.(发光学报), 2010, 31(3):364-368 (in Chinese).

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