红色Bi4 Ge3 O12晶体在低温下的发光性能

俞平胜; 苏良碧; 王庆国; 徐军

doi:10.3788/fgxb20123308.0828

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红色Bi₄ Ge₃ O₁₂晶体在低温下的发光性能

材料合成及性能研究 | 更新时间：2020-08-12

- 红色Bi₄ Ge₃ O₁₂晶体在低温下的发光性能
- Luminescence of Red Bi₄Ge₃O₁₂ Crystal in Low Temperature
- 发光学报 2012年33卷第8期页码：828-832
- 作者机构：
  
  1. 盐城工学院材料工程学院,江苏盐城,224051
  2. 中国科学院上海硅酸盐研究所透明与光功能无机材料重点实验室, 上海 201800
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61078053)资助项目()
- DOI：10.3788/fgxb20123308.0828
  中图分类号： O482.31
- 纸质出版日期：2012-8-10，
  
  收稿日期：2012-6-7，
  
  修回日期：2012-6-26，
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俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi4 Ge3 O12晶体在低温下的发光性能[J]. 发光学报, 2012,33(8): 828-832

YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi4Ge3O12 Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012,33(8): 828-832
俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi4 Ge3 O12晶体在低温下的发光性能[J]. 发光学报, 2012,33(8): 828-832 DOI： 10.3788/fgxb20123308.0828.

YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi4Ge3O12 Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012,33(8): 828-832 DOI： 10.3788/fgxb20123308.0828.

摘要

用下降法制备了Bi

晶体

发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi

晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi

在1 150 nm等波长处有较强的发射峰

强度随温度降低而增强

衰减时间为几百μs。

Abstract

Red Bi

(BGO) single crystals had been grown by vertical Bridgman (VB) method. The luminescence and decay time in the near infrared (NIR) region were measured at temperature of 8 K. A broad emission band was found at around 1 150 nm at

200 K

and the luminescence lifetime was measured to be several hundred microseconds. The decreased temperature led to increased luminescence intensity.

关键词

红色Bi4Ge3O12低温发光

Keywords

red Bi4Ge3O12low temperatureluminescence

references

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