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1. 盐城工学院 材料工程学院,江苏 盐城,224051
2. 中国科学院上海硅酸盐研究所 透明与光功能无机材料重点实验室, 上海 201800
纸质出版日期:2012-8-10,
收稿日期:2012-6-7,
修回日期:2012-6-26,
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俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi<sub>4</sub> Ge<sub>3</sub> O<sub>12</sub>晶体在低温下的发光性能[J]. 发光学报, 2012,33(8): 828-832
YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012,33(8): 828-832
俞平胜, 苏良碧, 王庆国, 徐军. 红色Bi<sub>4</sub> Ge<sub>3</sub> O<sub>12</sub>晶体在低温下的发光性能[J]. 发光学报, 2012,33(8): 828-832 DOI: 10.3788/fgxb20123308.0828.
YU Ping-sheng, SU Liang-bi, WANG Qing-guo, XU Jun. Luminescence of Red Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub> Crystal in Low Temperature[J]. Chinese Journal of Luminescence, 2012,33(8): 828-832 DOI: 10.3788/fgxb20123308.0828.
用下降法制备了Bi
4
Ge
3
O
12
晶体
发现生长出来的圆柱状晶体外侧呈现淡红色。对红色Bi
4
Ge
3
O
12
晶体进行了低温(至8 K)下的近红外发射光谱及衰减寿命等测试分析。发现低温时(200 K以下)红色Bi
4
Ge
3
O
12
在1 150 nm等波长处有较强的发射峰
强度随温度降低而增强
衰减时间为几百μs。
Red Bi
4
Ge
3
O
12
(BGO) single crystals had been grown by vertical Bridgman (VB) method. The luminescence and decay time in the near infrared (NIR) region were measured at temperature of 8 K. A broad emission band was found at around 1 150 nm at
T
<
200 K
and the luminescence lifetime was measured to be several hundred microseconds. The decreased temperature led to increased luminescence intensity.
红色Bi4Ge3O12低温发光
red Bi4Ge3O12low temperatureluminescence
Weber M J, Monchamp R R. Luminescence of Bi4Ge3O12: Spectral and decay properties [J]. J. Appl. Phys., 1973, 44 (12):5495-5499.
Nestor O H, Huang C Y. Bismuth germinate: A high-Z gamma-ray and charged particle detector [J]. IEEE Trans. Nucl. Sci., 1975, NS-2:68-72.
Marinova V, Petrova D, Lin S H, et al. Optical and holographic properties of Fe+Mn co-doped Bi4Ge3O12 crystals [J]. Opt. Commun., 2008, 281(1):37-43.
Shim J B, Yoshikawa A, Bensalah A, et al. Luminescence, radiation damage, and color center creation in Eu3+-doped Bi4Ge3O12 fiber single crystals [J]. J. Appl. Phys., 2003, 93(9):5131-5135.
Drozdowski W, Wojtowicz A J, Kaczmarek S M, et al. Scintillation yield of Bi4Ge3O12(BGO) pixel crystals [J]. Physica B, 2010, 405(6):1647-1651.
Farhi H, Belkahla S, Lebbou K, et al. BGO fibers growth by μ-pulling down technique and study of light propagation [J]. Physics Procedia, 2009, 2(3):819-825.
Xiao L J, Yan F Q, Xie Y, et al. Preparation and fluorescent properties of Bi3+ doped, Yb3+ doped and Bi3+, Yb3+ codoped Gd2O3 phosphors [J]. Chin. J. Lumin.(发光学报), 2012, 33(4):383-388 (in Chinese).
Zhang J S, Liang Z Q, Zhong H Y, et al. Enhanced red photoluminescence in Eu3+ and Bi3+ codoped LaMgB5O10 based on UV/blue LEDs excitation [J]. Chin. J. Lumin.(发光学报), 2011, 32(12):1210-1215 (in Chinese).
Beneventi P, Capelletti R, Kovács L, et al. FTIR spectroscopy of OH stretching modes in BSO, BGO and BTO sillenites [J]. J. Phys.: Condens. Mater., 1994, 6(31):6329-6344.
Whlecke M, Kovács L. OH- ions in oxide crystals [J]. Crit. Rev. Solid State Mater. Sci., 2001, 26(1):1-86.
Gironnet J, Mikhailik V B, Kraus H, et al. Scintillation studies of Bi4Ge3O12(BGO) down to a temperature of 6 K [J]. Nucl. Instr. and Meth. A, 2008, 594(3):358-361.
Jackson R A, Valerio M E G. Computer modelling of radiation generated defects in BGO scintillators [J]. Nucl. Instrum. Meth. B, 2004, 218:145-147.
Kibar R, etin A, Tuncer Y, et al. Cathodoluminescence response from rare earth doped Bi4Ge3O12 [J]. Physics Procedia, 2009, 2(2):379-390.
Itoh M, Katagiri T, Mitani H, et al. Comparative study of excitonic structures and luminescence properties of Bi4Ge3O12 and Bi12GeO20 [J]. Phys. Status Solidi B, 2008, 245(12):2733-2736.
Mikhailik V B, Kraus H, Henry S, et al. Scintillation studies of CaWO4 in the millikelvin temperature range [J]. Phys. Rev. B, 2007, 75(18):184308-1-6.
Wang J L, Yin F C, Song Z X, et al. An all-solid-state laser with high stability output power [J]. Chin. J. Lumin.(发光学报), 2011, 32(8):830-833 (in Chinese).
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