六方系InAlGaN晶体的长波长光学声子研究

陈贵楚; 范广涵

doi:10.3788/fgxb20123308.0808

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六方系InAlGaN晶体的长波长光学声子研究

材料合成及性能研究 | 更新时间：2020-08-12

- 六方系InAlGaN晶体的长波长光学声子研究
- Study on Long-wavelength Optical Phonons in Hexagonal InAlGaN Crystals
- 发光学报 2012年33卷第8期页码：808-811
- 作者机构：
  
  1. 肇庆学院物理系,广东肇庆,526061
  2. 华南师范大学光电子材料与技术研究所, 广东广州 510631
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176043)();肇庆学院自然科学基金(201109)资助项目()
- DOI：10.3788/fgxb20123308.0808
  中图分类号： O433;O484
- 纸质出版日期：2012-8-10，
  
  收稿日期：2012-4-6，
  
  修回日期：2012-6-17，
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陈贵楚, 范广涵. 六方系InAlGaN晶体的长波长光学声子研究[J]. 发光学报, 2012,33(8): 808-811

CHEN Gui-chu, FAN Guang-han. Study on Long-wavelength Optical Phonons in Hexagonal InAlGaN Crystals[J]. Chinese Journal of Luminescence, 2012,33(8): 808-811
陈贵楚, 范广涵. 六方系InAlGaN晶体的长波长光学声子研究[J]. 发光学报, 2012,33(8): 808-811 DOI： 10.3788/fgxb20123308.0808.

CHEN Gui-chu, FAN Guang-han. Study on Long-wavelength Optical Phonons in Hexagonal InAlGaN Crystals[J]. Chinese Journal of Luminescence, 2012,33(8): 808-811 DOI： 10.3788/fgxb20123308.0808.

摘要

利用拉曼散射实验方法对六方系InAlGaN晶体的光学声子进行了测量

同时利用修正随机元素同向位移模型对其光学声子与组分的关系进行了理论模拟。结果表明InAlGaN晶体的E

与A

光学声子分支都表现为单模行为

测量得到的In

0.45-

0.55

N晶体的A

(LO)声子与计算结果一致。对In

0.42-

0.58

N晶体的A

(LO)声子的计算结果与Cros的测量结果进行了对比

两者也相符。

Abstract

The optical phonons are investigated experimentally by means of Raman scatterning and by the modified random element isodisplacement (MREI) model in hexagonal quaternary nitride-based crystals. A one-mode behavior of E

and A

branches is presented in our calculated results. The calculated A

(LO) branches are almost consistent with our experimental data for In

0.45-

0.55

N crystals

and Cros's experimenatal results for In

0.42-

0.58

N crystals.

关键词

InAlGaN光学声子拉曼散射MREI

Keywords

InAlGaNoptical phononRaman scatteringMREI

references

Akasaki I. Renaissance and progress in crystal growth of nitride semiconductors [J]. J. Crystal Growth, 1999, 198(2):885-893.

Xing B, Cao W Y, Du W M. Temperature dependent PL of InGaN/GaN multiple quantum wells with variable content of In [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):864-869 (in Chinese).

Xue J S, Hao Y, Zhou X W, et al. High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition [J]. J. Crystal Growth, 2011, 314(1):359-364.

He T, Chen Y, Li H, et al. Optimization of two-step AlN buffer of a-plane GaN films grown on r-plane sapphire by MOCVD [J]. Chin. J. Lumin.(发光学报), 2011, 32(4):363-367 (in English).

Yu F M, Wang K Q, Shen C W. Influence of polaron effects on the optical absorptions in asymmetrical quantum wells [J]. Chin. J. Lumin.(发光学报), 2010, 31(4):467-472 (in English) .

Khan M A, Yang J W, Simin G, et al. Lattice and energy band engineering in AlInGaN/GaN heterostructures [J]. Appl. Phys. Lett., 2000, 76(9):1161-1163.

Herrera M, Cremades A, Piqueras J, et al. Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy [J]. J. Appl. Phys., 2004, 95(10):5306-5311.

Cros A, Cantarero1 A, Pelekanos N T, et al. Resonant Raman characterization of InAlGaN/GaN heterostructures [J]. Phys. Stat. Sol. (b), 2006, 243(7):1674-1678.

Yu S G, Kim K W, Bergman L, et al. Long-wavelength optical phonons in ternary nitride-based crystals [J]. Phys. Rev. B, 1998, 58(23):15283-15287.

Chang I F, Mitra S S. Application of a modified random-element-isodisplacement model to long-wavelength optic phonons of mixed crystals [J]. Phys. Rev., 1968, 172(3):924-933.

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