温度对p-InN薄膜光电导灵敏度的影响

冯丽

doi:10.3788/fgxb20123307.0785

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温度对p-InN薄膜光电导灵敏度的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 温度对p-InN薄膜光电导灵敏度的影响
- Temperature-dependent Photoresponsivity Observed in Mg-doped p-InN Layers
- 发光学报 2012年33卷第7期页码：785-789
- 作者机构：
  
  北京大学物理学院北京,100871
- 作者简介：
- 基金信息：
- DOI：10.3788/fgxb20123307.0785
  中图分类号： O472.3
- 纸质出版日期：2012-7-10，
  
  网络出版日期：2012-7-10，
  
  收稿日期：2012-4-26，
  
  修回日期：2012-5-30，
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冯丽. 温度对p-InN薄膜光电导灵敏度的影响[J]. 发光学报, 2012,33(7): 785-789

FENG Li. Temperature-dependent Photoresponsivity Observed in Mg-doped p-InN Layers[J]. Chinese Journal of Luminescence, 2012,33(7): 785-789
冯丽. 温度对p-InN薄膜光电导灵敏度的影响[J]. 发光学报, 2012,33(7): 785-789 DOI： 10.3788/fgxb20123307.0785.

FENG Li. Temperature-dependent Photoresponsivity Observed in Mg-doped p-InN Layers[J]. Chinese Journal of Luminescence, 2012,33(7): 785-789 DOI： 10.3788/fgxb20123307.0785.

摘要

研究了p型InN的光电导效应。利用分子束外延技术(MBE)法生长出高质量的InN薄膜

在此基础上利用Mg掺杂获得了p-InN。原位反射高能电子衍射(RHEED)表明样品在生长过程中保持二维生长模式

原子力显微镜(AFM)测试结果显示台阶流的生长模式。实验发现

p型InN的光电导灵敏度随温度的升高而降低。其主要原因是当温度升高时

光生载流子浓度降低和样品背景浓度升高共同造成的。

Abstract

We reported the photoconductivity of Mg-doped p-InN layers

which were grown by molecular beam epitaxy (MBE). The surface of these samples was very flat which were observed by both reflection high energy electron diffraction (RHEED) and atomic force microscope (AFM). We studied the temperature-dependent photoconductivity of Mg-doped p-InN layers. We found out that the photosensitivity decreased with increasing temperature

which resulted from both the variation of photon-generated carrier concentration and the residual carrier concentration with increasing temperature.

关键词

分子束外延原位反射高能电子衍射Mg掺杂p-InN光电导灵敏度

Keywords

molecular beam epitaxy(MBE)reflection high energy electron diffraction(RHEED)Mg doped p-InNphotosensitivity

references

Li S X, Yu K M, Wu J, et al. Fermi-level stabilization energy in group Ⅲ nitrides [J]. Physical Review B, 2005, 71 (16):161201-1-4.

Klochikhin A, Davydov V, Emtsev V, et al. Photoluminescence of n-InN with low electron concentrations [J]. Phys. Stat. Sol., 2006, 203(1):50-58.

Kamińska A, Franssen G, Suski T, et al. Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure [J]. Physical Review B, 2007, 76(7):075203-1-5.

Wang X Q, Yoshikawa A. Molecular beam epitaxy growth of GaN, AlN and InN [J]. Progress in Crystal Growth and Characterization of Materials, 2004, 49(48):42-103.

Nanishi Y, Saito Y, Yamaguchi T. RF-molecular beam epitaxy growth and properties of InN and related alloys [J]. Japanese Journal of Applied Physics, 2003, 42(9):2549-2559.

Wang X Q, Liu S T, Ma N, et al. High-electron-mobility InN layers grown by boundary-temperature-controlled epitaxy [J]. Appl. Phys. Express, 2012, 5(1):015502-1-3.

Walukiewicz W, Li S X, Wu J K, et al. Optical properties and electronic structure of InN and In-rich group Ⅲ-nitride alloys [J]. Journal of Crystal Growth, 2004, 269(1):119-127.

Ding S F, Fan G H, Li S T, et al. First-principles study of the p-type doped InN [J]. Acta Physica Sinica (物理学报),2007, 56(7):4062-4067 (in Chinese).

Ma N, Wang X Q, Xu F J, et al. Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p-type conduction [J]. Appl. Phys. Lett., 2010, 97(22):222114-1-4.

Hea L, Yang J R, Wang S L. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe [J]. Journal of Crystal Growth, 1997, 176(175):677-681.

Besikci C, Choi Y H, Labeyrie G, et al. Detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by metalorganic chemical-vapor deposition [J]. J. Appl. Phys., 1994, 76(10):5820-5828.

Jones R E, Yu K M, Li S X, et al. Evidence for p-type doping of InN [J]. Phys. Rev. Lett., 2006, 96(12):125505-1-4.

Chen R S, Yang T H, Chen H Y, et al. High-gain photoconductivity in semiconducting InN nanowires [J]. Appl. Phys. Lett., 2009, 95(16):162112-1-3.

Soci C, Zhang A, Xiang B, et al. ZnO nanowire UV photodetectors with high internal gain [J]. Nano Lett., 2007, 7(4):1003-1009.

Arnaudov B, Paskova T, Evtimova S, et al. Multilayer model for Hall effect data analysis of semiconductor structures with step-changed conductivity [J]. Phys. Rev. B, 2003, 67(4):045314-1-10.

Wang X Q, Che S B, Ishitani Y, et al. Hole mobility in Mg-doped p-type InN films [J]. Appl. Phys. Lett., 2008, 92 (13):132108-1-3.

Bailey L R, Veal T D, Kendrick C E, et al. Sulfur passivation of InN surface electron accumulation [J]. Appl. Phys. Lett., 2009, 95(19):192111-1-3.

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